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Infineon Technologies Electronic Components Datasheet

PXFC193808SV Datasheet

Thermally-Enhanced High Power RF LDMOS FET

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PXFC193808SV pdf
PXFC193808SV
Thermally-Enhanced High Power RF LDMOS FET
380 W, 28 V, 1805 – 1880 MHz
Description
The PXFC193808SV is a 380-watt LDMOS FET intended for use in
multi-standard cellular power amplifier applications in the 1805 to 1880
MHz frequency band. Features include input and output matching,
high gain and a thermally-enhanced package with earless flange.
Manufactured with Infineon's advanced LDMOS process, this device
provides excellent thermal performance and superior reliability.
PXFC193808SV
Package H-37275G-6/2
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 2850 mA, ƒ = 1880 MHz
3GPP WCDMA signal,
10 dB PAR, 3.84 MHz bandwidth
24
60
20 Gain
16
12
40
Efficiency
20
0
8 -20
4
PAR @ 0.01% CCDF
-40
0 -60c193808sv-gr1c
25 30 35 40 45 50 55
Average Output Power (dBm)
Features
• Broadband internal input and output matching
• Typical pulsed CW performance, 1842.5 MHz, 28 V,
- Output power at P1dB = 380 W
- Efficiency = 54.9%
- Gain = 21 dB
• Integrated ESD protection
• ESD: Human Body Model, Class 2 (per ANSI/
ESDA/JEDEC JS-001)
• Capable of handling 10:1 VSWR @28 V, 200 W
(1-C WCDMA) output power
• Low thermal resistance
• Pb-free and RoHS compliant
RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon Doherty test fixture)
VDD = 28 V, IDQ = 2880 mA, POUT = 80 W avg, ƒ = 1880 MHz.
3GPP signal, 3.84 MHz channel bandwidth, 10 dB peak/average @ 0.01% probability on CCDF.
Characteristic
Symbol Min Typ
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Gps
ηD
ACPR
19.5 21
28.5 30.3
— –33.5
Max
–32
Unit
dB
%
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 02.1, 2015-01-13


Infineon Technologies Electronic Components Datasheet

PXFC193808SV Datasheet

Thermally-Enhanced High Power RF LDMOS FET

No Preview Available !

PXFC193808SV pdf
PXFC193808SV
DC Characteristics (each side)
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Gate Leakage Current
On-State Resistance
Operating Gate Voltage
Conditions
VGS = 0 V, IDS = 10 mA
VDS = 28 V, VGS = 0 V
VDS = 63 V, VGS = 0 V
VGS = 10 V, VDS = 0 V
VGS = 10 V, VDS = 0.1 V
VDS = 28 V, IDQ = 2.88 A
Symbol
V(BR)DSS
IDSS
IDSS
IGSS
RDS(on)
VGS
Min
65
2.3
Typ
0.19
2.6
Max
1
10
1
2.9
Unit
V
µA
µA
µA
Ω
V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (TCASE = 70°C, 280 W CW)
Symbol
VDSS
VGS
VDD
TJ
TSTG
RθJC
Value
65
–6 to +10
0 to +32
225
–65 to +150
0.18
Unit
V
V
V
°C
°C
°C/W
Ordering Information
Type and Version Order Code
Package and Description
Shipping
PXFC193808SV V1 R250 PXFC193808SVV1R250XTMA1 H-37275G-6/2, ceramic open-cavity, push-pull, earless Tape & Reel, 250 pcs
Data Sheet
2 of 10
Rev. 02.1, 2015-01-13


Part Number PXFC193808SV
Description Thermally-Enhanced High Power RF LDMOS FET
Maker Infineon
Total Page 10 Pages
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