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IN25AA020N Datasheet Preview

IN25AA020N Datasheet

NONVOLATILE ELECTRICALLY ERASABLE PROM

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IN25AA020N pdf
IN25АА020N, IN25АА020D, IN25АА040N, IN25АА040D
NONVOLATILE ELECTRICALLY ERASABLE PROM WITH SERIAL
PERIPHERAL INTERFACE (SPI).
DESCRIPTION
The IN25АА020N/D are a 2K(256x8) serial Electrically Erasable PROM with SPI interface.
*The IN25АА040N/D are a 4K (512x8) serial Electrically Erasable PROM with SPI interface (SPI).
The ICs is purposed for reading, writing & nonvolatile data storage in electronic units with SPI interface. ICs
are realized in SO-8 (MS-012АA) and DIP-8 (MS-001BA)
FEATURES
- Data capacity, QINF:
for IN25АА020N, IN25АА020D
for IN25АА040N, IN25АА040D
2048 bit,
4096 bit;
- Maximum clock frequency, fC:
for 4,5 V UCC 5,5 V
for 2,5 V UCC 5,5 V
for 1,8 V UCC 5,5 V
- Maximum stand-by current, ICC:
for UCC = 5,5 V, UIL = 0 V, UIH = UCC
for UCC = 2,5 V, UIL = 0 V, UIH = UCC
3 MHz;
2 MHz;
1 MHz;
5,0 uA
1,0 uA;
- Maximum read current, IOCCR :
for UCC = 5,5 В, fC = 3,0 МГц, SO pin is not loaded .…1,0 mA,
for UCC = 2,5 В, fC = 2,0 МГц, SO pin is not loaded …..0,5 mA;
- Maximum write current, IOCCW :
for UCC = 5,5 V
5,0 mA;
for UCC = 2,5 V
3,0 mA;
- Byte & page (16 bytes) data write modes are available;
- Endurance NE/W, …...1000000 cycles;
- Write protection block protect none, 1/4, 1/2, or all of storage
array;
- Power on/off data protection circuitry;
- Supply voltage UCC 1,8 … 5,5 V;
- Temperature range -40 … +85°C.
- 100 years non-volatile data retention time
N SUFFIX
DIP
8
1 D SUFFIX
8 SOIC
1
Pin
Name
CS
SO
WP
GND
SI
SCK
HOLD
VCC
Function
Chip Select
Serial Data Output
Write protection
Ground
Serial Data Input
Clock Input
Hold input *
Power Supply
PIN FUNCTIONS
CS 01
SO 02
WP 03
GND 04
08 Vcc
07 HOLD
06 SCK
05 SI
Ver.00/11.07.2008
1 IN25AA020(040)-TSe.doc
1711616



Integral
Integral

IN25AA020N Datasheet Preview

IN25AA020N Datasheet

NONVOLATILE ELECTRICALLY ERASABLE PROM

No Preview Available !

IN25AA020N pdf
IN25АА020N, IN25АА020D, IN25АА040N, IN25АА040D
Block Diagram
Status
counter
HV-generator
I/O
Control
logic
Memory
control logic
EEPROM Array
SI
SO
CS
SCK
HOLD
WP
Page latches
Decoder Y
Sense amplifier,
Read/Write control
UCC
GND
Recommended Operation Conditions & Maximum Ratings*
Parameter, unit
Supply voltage,V
High level input 2,7 V Ucc 5,5 V
voltage, V
1,8 V Ucc < 2,7 V
Low level input 2,7 V Ucc 5,5 V
voltage, V
1,8 V Ucc < 2,7 V
Ambient temperature
Symbol
Ucc
Recommended
Operation Conditions
Min Max
1,8 5,5
2,0 Ucc + 1,0
UIH 0,7Ucc Ucc + 1,0
UIL -0,3 0,8
-0,3 0,3UCC
TA -40 85
Maximum Ratings
Min Max
-0,6 7,0
– Ucc + 1,0
- 0,6
-60
-
150
ESD protection 2000 V.
Input capacity СI, output capacity СО have to be not more than 7pF for UCC = 5,0 V & TA=
(25±10) °С.
Ver.00/11.07.2008
2 IN25AA020(040)-TSe.doc
1711616


Part Number IN25AA020N
Description NONVOLATILE ELECTRICALLY ERASABLE PROM
Maker Integral
Total Page 12 Pages
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