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International Rectifier Electronic Components Datasheet

AUIRF7343Q Datasheet

Power MOSFET

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AUIRF7343Q pdf
AUTOMOTIVE MOSFET
PD - 96343B
AUIRF7343Q
Features
l Advanced Planar Technology
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 150°C Operating Temperature
l Automotive [Q101] Qualified*
l Lead-Free, RoHS Compliant
Description
Specifically designed for Automotive applications, these
HEXFET® Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a 150°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other
applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it ideal
in a variety of power applications. This dual, surface mount
SO-8 can dramatically reduce board space and is also available
in Tape & Reel.
HEXFET® Power MOSFET
N-CHANNEL MOSFET
S1 1
8 D1
G1 2
7 D1
S2 3
6 D2
G2 4
5 D2
P-CHANNEL MOSFET
Top View
N-Ch P-Ch
V(BR)DSS
55V -55V
RDS(on) typ. 0.043Ω 0.095Ω
max. 0.050Ω 0.105Ω
ID 4.7A -3.4A
G
Gate
SO-8
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
EAS
IAR
EAR
VGS
dv/dt
TJ
TSTG
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
gPower Dissipation
gPower Dissipation
eSingle Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Gate-to-Source Voltage
dPeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
gRθJA Junction-to-Ambient
Max.
N-Channel
55
4.7
3.8
38
2.0
1.3
72
4.7
0.20
± 20
5.0
P-Channel
-55
-3.4
-2.7
-27
114
-3.4
-5.0
-55 to + 150
Units
V
A
W
mJ
A
mJ
V
V/ns
°C
Typ.
–––
Max.
62.5
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
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International Rectifier Electronic Components Datasheet

AUIRF7343Q Datasheet

Power MOSFET

No Preview Available !

AUIRF7343Q pdf
AUIRF7343Q
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
55 ––– –––
-55 ––– –––
V
VGS = 0V, ID = 250μA
VGS = 0V, ID = -250μA
––– 0.059 –––
––– 0.054 –––
V/°C
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
f––– 0.043 0.050
VGS = 10V, ID = 4.7A
f––– 0.056 0.065
f––– 0.095 0.105
Ω
VGS = 4.5V, ID = 3.8A
VGS = -10V, ID = -3.4A
f––– 0.150 0.170
VGS = -4.5V, ID = -2.7A
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
N-Ch
P-Ch
N-Ch
P-Ch
1.0 ––– –––
-1.0 ––– –––
7.9 ––– –––
3.3 ––– –––
V
VDS = VGS, ID = 250μA
VDS = VGS, ID = -250μA
ffS
VDS = 10V, ID = 4.5A
VDS = -10V, ID = -3.1A
N-Ch
––– ––– 2.0
VDS = 55V, VGS = 0V
IDSS
Drain-to-Source Leakage Current
P-Ch
N-Ch
––– ––– -2.0
––– ––– 25
μA
VDS = -55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 55°C
P-Ch
––– ––– -25
VDS = -55V, VGS = 0V, TJ = 55°C
IGSS Gate-to-Source Forward Leakage
––– ––– ± 100 nA VGS = ± 20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge
N-Ch
P-Ch
––– 24
––– 26
36
38
N-Channel
ID = 4.5A VDS = 44V, VGS =10V
Qgs Gate-to-Source Charge
ÃÃÃÃÃÃÃÃÃÃÃÃÃfN-Ch
P-Ch
––– 2.3 3.4
––– 3.0 4.5
nC
P-Channel
Qgd
Gate-to-Drain ("Miller") Charge
N-Ch
P-Ch
––– 7.0
––– 8.4
10
13
ID = -3.1A VDS = -44V, VGS =-10V
td(on)
Turn-On Delay Time
N-Ch
P-Ch
––– 8.3
––– 14
12
22
N-Channel
VDD = 28V, ID=1.0A, RG = 6.0Ω
tr
td(off)
Rise Time
Turn-Off Delay Time
N-Ch
P-Ch
N-Ch
P-Ch
––– 3.2 4.8
––– 10 15
––– 32 48
––– 43 64
ÃÃÃÃÃÃÃÃÃÃÃÃÃfRD = 28Ω
ns
P-Channel
VDD = -28V, ID=-1.0A, RG = 6.0Ω
RD = 28Ω
tf Fall Time
N-Ch
P-Ch
––– 13
––– 22
20
32
Ciss Input Capacitance
N-Ch
P-Ch
––– 740 –––
––– 690
N-Channel
VGS = 0V, VDS = 25V, f =1.0Mhz
Coss Output Capacitance
N-Ch
P-Ch
––– 190 –––
––– 210
pF P-Channel
Crss
Reverse Transfer Capacitance
N-Ch
P-Ch
––– 71 –––
––– 86
VGS = 0V, VDS = -25V, f =1.0Mhz
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
––– ––– 2.0
––– ––– -2.0
––– ––– 38
––– ––– -27
––– 0.70 1.2
––– -0.80 -1.2
––– 60 90
––– 54 80
––– 120 170
––– 85 130
A
eeV
TJ = 25°C, IS = 2.0A, VGS = 0V
TJ = 25°C, IS = -2.0A, VGS = 0V
ÃÃÃÃÃÃÃÃÃÃÃÃÃfns
N-Channel
TJ = 25°C, IF = 2.0A di/dt = 100A/μs ƒ
nC
P-Channel
TJ = 25°C, IF = -2.0A di/dt = 100A/μs ƒ
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
(See fig. 22 )
‚ N-Channel ISD 4.7A, di/dt 220A/µs, VDD V(BR)DSS, TJ 150°C
P-Channel ISD -3.4A, di/dt -150A/µs, VDD V(BR)DSS, TJ 150°C
2
ƒ N-Channel Starting TJ = 25°C, L = 6.5mH RG = 25Ω, IAS = 4.7A.
P-Channel Starting TJ = 25°C, L = 20mH RG = 25Ω, IAS = -3.4A.
„ Pulse width 300µs; duty cycle 2%.
… Surface mounted on FR-4 board, t 10sec.
www.irf.com
Free Datasheet http://www.datasheet4u.com/


Part Number AUIRF7343Q
Description Power MOSFET
Maker International Rectifier
Total Page 13 Pages
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