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International Rectifier Electronic Components Datasheet

AUIRF9952Q Datasheet

Power MOSFET

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AUIRF9952Q pdf
AUTOMOTIVE GRADE
PD - 97647
AUIRF9952Q
Features
l Advanced Planar Technology
l Low On-Resistance
l Dual N and P Channel MOSFET
l Dynamic dV/dT Rating
l 150°C Operating Temperature
l Fast Switching
l Full Avalanche Rated
l Repetitive Avalanche Allowed up to
Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
HEXFET® Power MOSFET
N-CHANNEL MOSFET
S1 1
8 D1
G1 2
V7 D1
(BR)DSS
S2 3
G2 4
6
5
D2
D2
RDS(on) max.
P-CHANNEL MOSFET
Top View
ID
N-CH P-CH
30V -30V
0.10Ω 0.25Ω
3.5A -2.3A
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit com-
bined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and
a wide variety of other applications.
SO-8
AUIRF9952Q
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TA = 25°C 10 Sec. Pulsed Drain Current, VGS @ 10V
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
PD @TA = 25°C Power Dissipation
PD @TA = 70°C Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
eSingle Pulse Avalanche Energy
cAvalanche Current
cRepetitive Avalanche Energy
dPeak Diode Recovery dv/dt
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
gRθJA Junction-to-Ambient (PCB Mount, steady state)
Max.
N-Channel
P-Channel
3.5 -2.3
2.8 -1.8
16 -10
2.0
1.3
0.016
± 20
44 57
2.0 -1.3
0.25
5.0 -5.0
-55 to + 150
Typ.
–––
Max.
62.5
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
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International Rectifier Electronic Components Datasheet

AUIRF9952Q Datasheet

Power MOSFET

No Preview Available !

AUIRF9952Q pdf
AUIRF9952Q
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
N-Ch
P-Ch
30
-30
–––
–––
–––
–––
V VGS = 0V, ID = 250μA
VGS = 0V, ID =-250μA
ΔV(BR)DSS/ΔTJ
Breakdown Voltage Temp. Coefficient
N-Ch
P-Ch
–––
–––
0.015
0.015
–––
–––
V/°C Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
ffffRDS(on)
N-Ch
Static Drain-to-Source On-Resistance
P-Ch
–––
–––
–––
–––
0.08 0.10
0.12 0.15
0.165 0.250
0.290 0.400
Ω
VGS = 10V, ID = 2.2A
VGS = 4.5V, ID = 1.0A
VGS = -10V, ID = -1.0A
VGS = -4.5V, ID = -0.5A
VGS(th)
Gate Threshold Voltage
N-Ch 1.0 ––– 3.0
P-Ch -1.0 ––– -3.0
V VDS = VGS, ID = 250μA
VDS = VGS, ID = -250μA
gfs Forward Transconductance
N-Ch ––– 12 –––
P-Ch ––– 2.4 –––
S VDS = 15V, ID = 3.5A
VDS = -15V, ID = -2.3A
N-Ch ––– ––– 2.0
VDS = 24V, VGS = 0V
IDSS
Drain-to-Source Leakage Current
P-Ch ––– ––– -2.0
N-Ch ––– ––– 25
μA VDS = -24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
P-Ch ––– ––– -25
VDS = -24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
N-P
N-P
–––
–––
––– -100
––– 100
nA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge
Qgs Gate-to-Source Charge
N-Ch ––– 6.9 14
N-Channel
P-Ch ––– 6.1 12
ID = 1.8A, VDS = 10V, VGS = 10V
N-Ch ––– 1.0 2.0 nC
P-Ch ––– 1.7 3.4
P-Channel
Qgd
Gate-to-Drain ("Miller") Charge
N-Ch ––– 1.8 3.5
N-Ch ––– 1.1 2.2
ID =-2.3A, VDS =-10V, VGS =-10V
td(on)
tr
Turn-On Delay Time
Rise Time
P-Ch ––– 6.2 12
N-Channel
N-Ch ––– 9.7 19
VDD= 10V, ID = 1.0A RG = 6.0Ω
P-Ch ––– 8.8 18
RD = 10Ω
N-Ch ––– 14 28 ns
td(off)
tf
Turn-Off Delay Time
Fall Time
N-Ch ––– 13 26
P-Ch ––– 20 40
N-Ch ––– 3.0 6.0
P-Ch ––– 6.9 14
P-Channel
VDD=-10V, ID =-1.0A RG = 6.0Ω
RD = 10Ω
Ciss Input Capacitance
N-Ch ––– 190 –––
P-Ch ––– 190 –––
N-Channel
VGS = 0V, VDS = 15V, ƒ = 1.0MHz
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics
N-Ch ––– 120 –––
P-Ch ––– 110 –––
N-Ch ––– 61 –––
P-Ch ––– 54 –––
pF
P-Channel
VGS = 0V, VDS = -15V, ƒ = 1.0MHz
Parameter
Min. Typ. Max. Units
Conditions
f
f
IS
Continuous Source Current
(Body Diode)
N-Ch ––– ––– 1.7
P-Ch ––– ––– -1.3 A
cISM
Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
N-Ch ––– ––– 16
P-Ch ––– ––– 16
N-Ch ––– 0.82 1.2
P-Ch ––– -0.82 -1.2
eV TJ = 25°C, IS = 1.25A, VGS = 0V
eTJ = 25°C, IS = -1.25A, VGS = 0V
N-Ch ––– 27 53 ns N-Channel
P-Ch ––– 27 54
TJ = 25°C,IF =1.25A, di/dt = 100A/μs
N-Ch ––– 28 57 nC P-Channel
f
P-Ch ––– 31 62
TJ = 25°C,IF =-1.25A, di/dt = 100A/μs
N-P Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
ƒ N-Channel Starting TJ = 25°C, L = 22mH RG = 25Ω, IAS = 2.0A.
max. junction temperature. ( See fig. 23 )
(See Figure 12)
‚ N-Channel ISD 2.0A, di/dt 100A/µs, VDD V(BR)DSS, P-Channel Starting TJ = 25°C, L = 67mH RG = 25Ω, IAS = -1.3A.
TJ 150°C.
„ Pulse width 300µs; duty cycle 2%.
P-Channel ISD -1.3A, di/dt 84A/µs, VDD V(BR)DSS, … Surface mounted on FR-4 board, t 10sec.
TJ 150°C.
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Part Number AUIRF9952Q
Description Power MOSFET
Maker International Rectifier
Total Page 13 Pages
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