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International Rectifier Electronic Components Datasheet

AUIRFB8405 Datasheet

Power MOSFET

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AUIRFB8405 pdf
AUTOMOTIVE GRADE
AUIRFB8405
Features
Advanced Process Technology
New Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
G
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These features combine to make
this design an extremely efficient and reliable device for use
in Automotive applications and wide variety of other applications.
Applications
Electric Power Steering (EPS)
Battery Switch
Start/Stop Micro Hybrid
Heavy Loads
DC-DC Applications
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
40V
2.1mΩ
2.5mΩ
ID (Silicon Limited)
185A
S
ID (Package Limited)
120A
G
Gate
D
DS
G
TO-220AB
AUIRFB8405
D
Drain
S
Source
Base part number
AUIRFB8405
Package Type
TO-220
Standard Pack
Form
Tube
Quantity
50
Orderable Part Number
AUIRFB8405
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
185
131
120
904
163
1.1
± 20
-55 to + 175
300
10lbfin (1.1Nm)
Units
A
W
W/°C
V
°C
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1 www.irf.com © 2013 International Rectifier
April 30, 2013


International Rectifier Electronic Components Datasheet

AUIRFB8405 Datasheet

Power MOSFET

No Preview Available !

AUIRFB8405 pdf
AUIRFB8405
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy
EAS (tested)
Single Pulse Avalanche Energy Tested Value
IAR Avalanche Current
EAR Repetitive Avalanche Energy
Thermal Resistance
181
247
See Fig. 14, 15, 24a, 24b
mJ
A
mJ
Symbol
Parameter
Typ.
Max.
Units
RθJC
RθCS
RθJA
Junction-to-Case 
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
––– 0.92
0.50
––– °C/W
––– 62
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
IDSS
IGSS
RG
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
40 ––– ––– V VGS = 0V, ID = 250μA
––– 0.026 ––– V/°C Reference to 25°C, ID = 1.0mA
––– 2.1 2.5 mΩ VGS = 10V, ID = 100A
2.2 3.0 3.9 V VDS = VGS, ID = 100μA
––– ––– 1.0
––– ––– 150
μA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
–––
–––
––– 100
––– -100
nA
VGS = 20V
VGS = -20V
––– 2.3 ––– Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
100 ––– –––
––– 107 161
––– 29 –––
––– 39 –––
––– 68 –––
––– 14 –––
––– 128 –––
––– 55 –––
––– 77 –––
––– 5193 –––
––– 754 –––
––– 519 –––
––– 878 –––
––– 1225 –––
S VDS = 10V, ID = 100A
ID = 100A
nC
VDS =20V
VGS = 10V
ID = 100A, VDS =0V, VGS = 10V
VDD = 26V
ns
ID = 100A
RG = 2.7Ω
VGS = 10V
VGS = 0V
VDS = 25V
pF ƒ = 1.0 MHz, See Fig. 5
VGS = 0V, VDS = 0V to 32V , See Fig. 11
VGS = 0V, VDS = 0V to 32V
2 www.irf.com © 2013 International Rectifier
April 30, 2013


Part Number AUIRFB8405
Description Power MOSFET
Maker International Rectifier
Total Page 12 Pages
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