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International Rectifier Electronic Components Datasheet

AUIRFR3504 Datasheet

HEXFET Power MOSFET

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AUIRFR3504 pdf
Features
l Advanced Planar Technology
l Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed
up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
AUTOMOTIVE GRADE
PD - 97687A
AUIRFR3504
HEXFET® Power MOSFET
D V(BR)DSS
40V
RDS(on) typ.
7.8mΩ
jG
max
9.2mΩ
ID (Silicon Limited)
87A
S ID (Package Limited)
56A
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This
benefit combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
G
Gate
D
S
G
D-Pak
AUIRFR3504
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
Max.
87j
61j
Units
A
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
cPulsed Drain Current
Power Dissipation
Linear Derating Factor
56
350
140
0.92
W
W/°C
VGS
EAS
EAS (tested )
IAR
EAR
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
iSingle Pulse Avalanche Energy Tested Value
cAvalanche Current
cRepetitive Avalanche Energy
± 20
240
480
See Fig. 12a, 12b, 15, 16
V
mJ
A
mJ
TJ Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
300
°C
Parameter
lRθJC
Junction-to-Case
kRθJA Junction-to-Ambient (PCB Mount)
RθJA Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.09
50
110
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
08/30/11


International Rectifier Electronic Components Datasheet

AUIRFR3504 Datasheet

HEXFET Power MOSFET

No Preview Available !

AUIRFR3504 pdf
AUIRFR3504
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
40 ––– ––– V VGS = 0V, ID = 250μA
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.041 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
fStatic Drain-to-Source On-Resistance ––– 7.8 9.2 mΩ VGS = 10V, ID = 30A **
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
2.0 ––– 4.0
40 ––– –––
V VDS = VGS, ID = 250μA
fS VDS = 10V, ID = 30A **
IDSS
Drain-to-Source Leakage Current
––– ––– 20 μA VDS = 40V, VGS = 0V
––– ––– 250
VDS = 40V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge
––– 48 71
ID = 30A **
Qgs Gate-to-Source Charge
––– 12 18 nC VDS = 32V
fQgd
Gate-to-Drain ("Miller") Charge
––– 13 20
VGS = 10V
td(on)
Turn-On Delay Time
––– 11 –––
VDD = 20V
tr Rise Time
––– 53 –––
ID = 30A **
td(off)
tf
Turn-Off Delay Time
Fall Time
f––– 36 ––– ns RG = 6.8Ω
––– 22 –––
VGS = 10V
LD Internal Drain Inductance
––– 4.5 –––
Between lead,
D
LS Internal Source Inductance
nH 6mm (0.25in.)
––– 7.5 –––
from package
G
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
Coss
Coss eff.
gOutput Capacitance
Effective Output Capacitance
Diode Characteristics
––– 2150 –––
––– 580 –––
––– 46 –––
––– 2830 –––
––– 510 –––
––– 870 –––
and center of die contact
VGS = 0V
pF VDS = 25V
ƒ = 1.0MHz, See Fig. 5
S
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 32V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
Parameter
Min. Typ. Max. Units
Conditions
jIS
Continuous Source Current
––– ––– 87
MOSFET symbol
D
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 350
A showing the
integral reverse
G
––– ––– 1.3
fp-n junction diode.
S
V TJ = 25°C, IS = 30A**, VGS = 0V
f––– 53 80 ns TJ = 25°C, IF = 30A**, VDD = 20V
––– 86 130 nC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Limited by TJmax, starting TJ = 25°C,
L = 0.52mH, RG = 25Ω, IAS = 30A, VGS =10V.
Part not recommended for use above this
value.
ƒ ISD 30A, di/dt 170A/μs, VDD V(BR)DSS,
TJ 175°C.
„ Pulse width 1.0ms; duty cycle 2%.
… Coss eff. is a fixed capacitance that gives the
same charging time as Coss while VDS is rising
from 0 to 80% VDSS .
2
† Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
‡ This value determined from sample failure population. 100%
tested to this value in production.
ˆ Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 56A.
‰ When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to
application note #AN-994.
Š Rθ is measured at TJ of approximately 90°C.
** All AC and DC test conditions based on former package
limited current of 30A.
www.irf.com


Part Number AUIRFR3504
Description HEXFET Power MOSFET
Maker International Rectifier
Total Page 13 Pages
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