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International Rectifier Electronic Components Datasheet

AUIRLL2705 Datasheet

Power MOSFET

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AUIRLL2705 pdf
AUTOMOTIVE GRADE
AUIRLL2705
Features
l Advanced Planar Technology
l Low On-Resistance
l Logic Level Gate Drive
l Dynamic dv/dt Rating
l 150°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed up to
Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
G
Description
Specifically designed for Automotive applications, this
cellular design of HEXFET® Power MOSFETs utilizes
the latest processing techniques to achieve low on-
resistance per silicon area. This benefit combined
with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide
variety of other applications.
HEXFET® Power MOSFET
D V(BR)DSS
55V
RDS(on) max. 0.04Ω
S ID
3.8A
G
Gate
D
S
D
G
SOT-223
AUIRLL2705
D
Drain
S
Source
Base Part Number
AUIRLL2705
Package Type
SOT-223
Standard Pack
Form
Quantity
Tube
95
Tape and Reel
2500
Orderable Part Number
AUIRLL2705
AUIRLL2705TR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 25°C
hContinuous Drain Current, VGS @ 10V
gContinuous Drain Current, VGS @ 10V
gContinuous Drain Current, VGS @ 10V
™Pulsed Drain Current
hPower Dissipation (PCB Mount)
gPower Dissipation (PCB Mount)
gLinear Derating Factor (PCB Mount)
5.2
3.8
3.0 A
30
2.1
W
1.0
8.3 mW/°C
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
ÙAvalanche Current
™gRepetitive Avalanche Energy
ePeak Diode Recovery dv/dt
± 16
110
3.8
0.10
7.5
V
mJ
A
mJ
V/ns
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
-55 to + 150
°C
Parameter
Typ.
Max.
Units
gRθJA Junction-to-Ambient (PCB mount, steady state)
93
hRθJA Junction-to-Ambient (PCB mount, steady state)
48
120 °C/W
60
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
March 26, 2014


International Rectifier Electronic Components Datasheet

AUIRLL2705 Datasheet

Power MOSFET

No Preview Available !

AUIRLL2705 pdf
AUIRLL2705
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
55 ––– –––
V VGS = 0V, ID = 250μA
––– 0.061 ––– V/°C Reference to 25°C, ID = 1mA
f––– ––– 0.040
VGS = 10V, ID = 3.8A
f––– ––– 0.051 Ω VGS = 5.0V, ID = 3.8A
f––– ––– 0.065
VGS = 4.0V, ID = 1.9A
1.0 ––– 2.0
V VDS = VGS, ID = 250μA
5.1 ––– –––
S VDS = 25V, ID = 1.9A
––– ––– 25
μA VDS = 55V, VGS = 0V
––– ––– 250
VDS = 44V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 16V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -16V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge
––– 32 48
ID = 3.8A
Qgs Gate-to-Source Charge
––– 3.5 5.3 nC VDS = 44V
fQgd
Gate-to-Drain ("Miller") Charge
––– 9.7 14
VGS = 10V, See Fig. 6 and 9
td(on)
Turn-On Delay Time
––– 6.2 –––
VDD = 28V
tr Rise Time
––– 12 ––– ns ID = 3.8A
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 35 –––
––– 22 –––
fRG = 6.2Ω
RD = 7.1Ω, See Fig. 10
Ciss Input Capacitance
––– 870 –––
VGS = 0V
Coss Output Capacitance
––– 220 ––– pF VDS = 25V
Crss
Reverse Transfer Capacitance
––– 92 –––
ƒ = 1.0MHz, See Fig. 5
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
––– ––– 0.91
MOSFET symbol
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 30
A showing the
integral reverse
––– ––– 1.3
––– 58 88
––– 140 210
fp-n junction diode.
V TJ = 25°C, IS = 3.8A, VGS = 0V
fns TJ = 25°C, IF = 3.8A
nC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11)
‚ VDD = 25V, starting TJ = 25°C, L = 15mH
RG = 25Ω, IAS = 3.8A. (See Figure 12)
ƒ ISD 3.8A, di/dt 220A/µs, VDD V(BR)DSS,
TJ 150°C .
„ Pulse width 300µs; duty cycle 2%.
… When mounted on FR-4 board using minimum recommended
footprint.
† When mounted on 1 inch square copper board, for comparison
with other SMD devices.
2
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
March 26, 2014


Part Number AUIRLL2705
Description Power MOSFET
Maker International Rectifier
Total Page 12 Pages
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