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International Rectifier Electronic Components Datasheet

IRF7343QPbF Datasheet

Power MOSFET

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IRF7343QPbF pdf
PD - 96110A
l Advanced Process Technology
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 150°C Operating Temperature
l Lead-Free
Description
These HEXFET® Power MOSFET's in a Dual SO-8 package
utilize the lastest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of
these HEXFET Power MOSFET's are a 150°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating.These benefits combine to make
this design an extremely efficient and reliable device for use
in a wide variety of applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available in Tape & Reel.
IRF7343QPBF
HEXFET® Power MOSFET
N-CHANNEL MOSFET
S1 1
8 D1
N-Ch P-Ch
G1 2
S2 3
7 D1
VDSS 55V -55V
6 D2
G2 4
5 D2
P-CHANNEL MOSFET
RDS(on) 0.0500.105
Top View
SO-8
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
EAS
IAR
EAR
VGS
dv/dt
TJ, TSTG
Parameter
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation …
Maximum Power Dissipation …
Single Pulse Avalanche Energyƒ
Avalanche Current
Repetitive Avalanche Energy
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambient …
Max.
N-Channel
P-Channel
55 -55
4.7 -3.4
3.8 -2.7
38 -27
2.0
1.3
72 114
4.7 -3.4
0.20
± 20
5.0 -5.0
-55 to + 150
Units
V
A
W
W
mJ
A
mJ
V
V/ns
°C
Typ.
–––
Max.
62.5
Units
°C/W
1
08/09/10


International Rectifier Electronic Components Datasheet

IRF7343QPbF Datasheet

Power MOSFET

No Preview Available !

IRF7343QPbF pdf
IRF7343QPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
N-Ch 55 — —
P-Ch -55 — —
V
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
N-Ch
P-Ch
— 0.059 —
— 0.054 —
V/°C
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
N-Ch
P-Ch
— 0.043 0.050
— 0.056 0.065
— 0.095 0.105
— 0.150 0.170
VGS = 10V, ID = 4.7A „
VGS = 4.5V, ID = 3.8A „
VGS = -10V, ID = -3.4A „
VGS = -4.5V, ID = -2.7A „
N-Ch 1.0 — —
P-Ch -1.0 — —
V
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
N-Ch 7.9 — —
P-Ch 3.3 — —
S
VDS = 10V, ID = 4.5A „
VDS = -10V, ID = -3.1A
„
N-Ch — — 2.0
VDS = 55V, VGS = 0V
P-Ch —
N-Ch —
—
—
-2.0
25
µA
VDS = -55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 55°C
P-Ch — — -25
VDS = -55V, VGS = 0V, TJ = 55°C
N-P –– — ±100 nA VGS = ±20V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
—
—
—
—
—
—
24 36
26 38
2.3 3.4
3.0 4.5
7.0 10
8.4 13
nC
N-Channel
ID = 4.5A, VDS = 44V, VGS = 10V
„
P-Channel
ID = -3.1A, VDS = -44V, VGS = -10V
N-Ch — 8.3 12
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
—
—
—
—
—
—
—
14 22
3.2 4.8
10 15
32 48
43 64
13 20
22 32
ns
N-Channel
VDD = 28V, ID = 1.0A, RG = 6.0Ω,
RD = 28
„
P-Channel
VDD = -28V, ID = -1.0A, RG = 6.0,
RD = 28
N-Ch — 740 —
N-Channel
P-Ch — 690 —
VGS = 0V, VDS = 25V, ƒ = 1.0MHz
N-Ch — 190 — pF
P-Ch — 210 —
P-Channel
N-Ch — 71 —
VGS = 0V, VDS = -25V, ƒ = 1.0MHz
P-Ch — 86 —
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
N-Ch — — 2.0
IS
Continuous Source Current (Body Diode)
P-Ch — — -2.0 A
N-Ch — — 38
ISM
Pulsed Source Current (Body Diode) 
P-Ch — — -27
VSD Diode Forward Voltage
N-Ch — 0.70 1.2
P-Ch — -0.80 -1.2
V
TJ = 25°C, IS = 2.0A, VGS = 0V ƒ
TJ = 25°C, IS = -2.0A, VGS = 0V ƒ
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
N-Ch
P-Ch
N-Ch
P-Ch
—
—
—
—
60 90
54 80
120 170
85 130
ns
nC
N-Channel
TJ = 25°C, IF =2.0A, di/dt = 100A/µs
P-Channel
TJ = 25°C, IF = -2.0A, di/dt = 100A/µs
„
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 22 )
„ Pulse width 300µs; duty cycle 2%.
‚ N-Channel ISD 4.7A, di/dt 220A/µs, VDD V(BR)DSS, TJ 150°C … Surface mounted on FR-4 board, t 10sec.
P-Channel ISD -3.4A, di/dt -150A/µs, VDD V(BR)DSS, TJ 150°C
ƒ N-Channel Starting TJ = 25°C, L = 6.5mH RG = 25, IAS = 4.7A.
P-Channel Starting TJ = 25°C, L = 20mH RG = 25, IAS = -3.4A.
2 www.irf.com


Part Number IRF7343QPbF
Description Power MOSFET
Maker International Rectifier
Total Page 10 Pages
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