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International Rectifier Electronic Components Datasheet

IRF7526D1PbF Datasheet

MOSFET & Schottky Diode

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IRF7526D1PbF pdf
PD -95437
IRF7526D1PbF
l Co-packaged HEXFET® Power
MOSFET and Schottky Diode
l P-Channel HEXFET
l Low VF Schottky Rectifier
l Generation 5 Technology
l Micro8TM Footprint
l Lead-Free
Description
FETKY TM MOSFET & Schottky Diode
A1
A2
8K
7K
VDSS = -30V
S3
6 D RDS(on) = 0.20
G4
5D
Schottky Vf = 0.39V
Top View
The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
The new Micro8TM package, with half the footprint area of the standard SO-8, provides
the smallest footprint available in an SOIC outline. This makes the Micro8TM an ideal
device for applications where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro8TM will allow it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
Micro8TM
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current À
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Á
Junction and Storage Temperature Range
Thermal Resistance Ratings
Parameter
RθJA
Junction-to-Ambient Ã
Maximum
-2.0
-1.6
-16
1.25
0.8
10
± 20
-5.0
-55 to +150
Maximum
100
Units
A
W
mW/°C
V
V/ns
°C
Units
°C/W
Notes:
 Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)
‚ ISD -1.2A, di/dt 160A/µs, VDD V(BR)DSS, TJ 150°C
ƒ Pulse width 300µs – duty cycle 2%
„ When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
www.irf.com
1
02/22/05


International Rectifier Electronic Components Datasheet

IRF7526D1PbF Datasheet

MOSFET & Schottky Diode

No Preview Available !

IRF7526D1PbF pdf
IRF7526D1PbF
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
-30 ––– ––– V VGS = 0V, ID = -250µA
RDS(on)
Static Drain-to-Source On-Resistance
––– 0.17 0.20 VGS = -10V, ID = -1.2A ƒ
––– 0.30 0.40
VGS = -4.5V, ID = -0.60A ƒ
VGS(th)
Gate Threshold Voltage
-1.0 ––– ––– V VDS = VGS, ID = -250µA
gfs Forward Transconductance
0.94 ––– ––– S VDS = -10V, ID = -0.60A
IDSS Drain-to-Source Leakage Current
––– ––– -1.0 µA VDS = -24V, VGS = 0V
––– ––– -25
VDS = -24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– -100
nA
VGS = -20V
Gate-to-Source Reverse Leakage
––– ––– 100
VGS = 20V
Qg Total Gate Charge
Qgs Gate-to-Source Charge
––– 7.5 11
––– 1.3 1.9
ID = -1.2A
nC VDS = -24V
Qgd Gate-to-Drain ("Miller") Charge ––– 2.5 3.7 VGS = -10V, See Fig. 6 ƒ
td(on)
Turn-On Delay Time
––– 9.7 –––
VDD = -15V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
––– 12 ––– ns ID = -1.2A
––– 19 –––
RG = 6.2
––– 9.3 –––
RD = 12Ω, ƒ
Ciss Input Capacitance
––– 180 –––
VGS = 0V
Coss Output Capacitance
––– 87 ––– pF VDS = -25V
Crss Reverse Transfer Capacitance
––– 42 –––
ƒ = 1.0MHz, See Fig. 5
MOSFET Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
ISM
Continuous Source Current(Body Diode) ––– ––– -1.25
Pulsed Source Current (Body Diode) ––– ––– -9.6 A
VSD Body Diode Forward Voltage
––– ––– -1.2 V TJ = 25°C, IS = -1.2A, VGS = 0V
trr Reverse Recovery Time (Body Diode) ––– 30 45 ns TJ = 25°C, IF = -1.2A
Qrr Reverse Recovery Charge
––– 37 55 nC di/dt = 100A/µs ƒ
Schottky Diode Maximum Ratings
Parameter
Max. Units
IF(av) Max. Average Forward Current
1.9
1.3 A
ISM
Max. peak one cycle Non-repetitive
120
Surge current
11 A
Schottky Diode Electrical Specifications
Conditions
50% Duty Cycle. Rectangular Wave, TA = 25°C
See Fig. 14
TA = 70°C
5µs sine or 3µs Rect. pulse Following any rated
10ms sine or 6ms Rect. pulse load condition &
with VRRM applied
Parameter
VFM Max. Forward voltage drop
IRM Max. Reverse Leakage current
Ct
dv/dt
Max. Junction Capacitance
Max. Voltage Rate of Charge
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
2
Max. Units
0.50
0.62
0.39 V
0.57
0.06 mA
16
92 pF
3600 V/µs
Conditions
IF = 1.0A, TJ = 25°C
IF = 2.0A, TJ = 25°C
IF = 1.0A, TJ = 125°C
IF = 2.0A, TJ = 125°C .
VR = 30V TJ = 25°C
TJ = 125°C
VR = 5Vdc ( 100kHz to 1 MHz) 25°C
Rated VR
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Part Number IRF7526D1PbF
Description MOSFET & Schottky Diode
Maker International Rectifier
Total Page 10 Pages
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