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International Rectifier Electronic Components Datasheet

IRFH8321PBF Datasheet

HEXFET Power MOSFET

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IRFH8321PBF pdf
VDS
Vgs max
RDS(on) max
(@VGS = 10V)
(@VGS = 4.5V)
Qg typ.
ID
(@Tc(Bottom) = 25°C)
30
± 20
4.9
6.8
19.4
25i
V
V
m
nC
A
Applications
Synchronous MOSFET for high frequency buck converters
IRFH8321PbF
HEXFET® Power MOSFET
PQFN 5X6 mm
Features
Low Thermal Resistance to PCB (< 2.3°C/W)
Low Profile (<1.2mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
results in
Benefits
Enable better thermal dissipation
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFH8321TRPBF
Package Type
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Note
Absolute Max imum Ratings
Pa ram ete r
VGS Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
ID @ TC (Bottom) = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC(Bottom) = 100°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 25°C
ID M
PD @TA = 25°C
PD @TC (Bottom) = 25°C
Continuous Drain Current, VGS @ 10V (Source Bonding
Technology Limited)
cPulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
TJ Operating Junction and
TSTG
Storage Temperature Range
Max.
± 20
21
17
83hi
52hi
25i
332
3.4
54
0.027
-55 to + 150
Units
V
A
W
W /°C
°C
Notes  through ‡ are on page 9
1 www.irf.com © 2012 International Rectifier
August 3, 2012


International Rectifier Electronic Components Datasheet

IRFH8321PBF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRFH8321PBF pdf
IRFH8321PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
30 ––– –––
V VGS = 0V, ID = 250μA
BVDSS/TJ Breakdown Voltage Temp. Coefficient ––– 19.7 ––– mV/°C Reference to 25°C, ID = 1.0mA
RDS(on)
eeStatic Drain-to-Source On-Resistance
–––
–––
3.9
5.4
4.9
6.8
m
VGS = 10V, ID = 20A
VGS = 4.5V, ID = 16A
VGS(th)
V GS(t h)
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
1.2
–––
1.7
-6.4
2.2
–––
V
mV/°C
VDS = VGS, ID = 50μA
IDSS
Drain-to-Source Leakage Current
––– ––– 1.0
μA VDS = 24V, VGS = 0V
––– ––– 150
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100
nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs Forward Transconductance
68 ––– –––
S VDS = 10V, ID = 20A
Qg Total Gate Charge
––– 39 59 nC VGS = 10V, VDS = 15V, ID = 20A
Qg Total Gate Charge
––– 19.4 29.1
Qgs1 Pre-Vth Gate-to-Source Charge
––– 5.0 –––
VDS = 15V
Qgs2 Post-Vth Gate-to-Source Charge ––– 1.9 ––– nC VGS = 4.5V
Qgd Gate-to-Drain Charge
––– 6.7 –––
ID = 20A
Qgodr
Gate Charge Overdrive
––– 5.8 –––
Qsw Switch Charge (Qgs2 + Qgd)
––– 8.6 –––
Qoss
Output Charge
––– 16.7 –––
nC VDS = 16V, VGS = 0V
RG Gate Resistance
––– 0.9 2.7
td(on)
Turn-On Delay Time
––– 14 –––
VDD = 15V, VGS = 4.5V
tr
td(of f )
Rise Time
Turn-Off Delay Time
––– 20 ––– ns ID = 20A
––– 12 –––
RG=1.8
tf Fall Time
––– 6.8 –––
Ciss Input Capacitance
––– 2600 –––
VGS = 0V
Coss Output Capacitance
––– 530 –––
pF VDS = 10V
Crss Reverse Transfer Capacitance ––– 270 ––– ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Diode Characteristics
Typ.
–––
–––
Max.
93
20
Units
mJ
A
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
™(Body Diode)
VSD Diode Forward Voltage
i––– ––– 25
––– ––– 332
––– ––– 1.0
MOSFET symbol
A showing the
integral reverse
D
G
p-n junction diode.
S
eV TJ = 25°C, IS = 20A, VGS = 0V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
––– 12 18 ns TJ = 25°C, IF = 20A, VDD = 15V
––– 20 30 nC di/dt = 500 A/μs
ton Forward Turn-On Time
Time is dominated by parasitic Inductance
Thermal Resistance
RqJC (Bottom)
RqJC (Top)
RqJA
RqJA (<10s)
Parameter
fJunction-to-Case
fJunction-to-Case
gJunction-to-Ambient
gJunction-to-Ambient
Typ.
–––
–––
–––
–––
Max.
2.3
31
37
25
Units
°C/W
2 www.irf.com © 2012 International Rectifier
August 3, 2012


Part Number IRFH8321PBF
Description HEXFET Power MOSFET
Maker International Rectifier
Total Page 9 Pages
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