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International Rectifier Electronic Components Datasheet

IRFNG40 Datasheet

POWER MOSFET N-CHANNEL

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Provisional Data Sheet No. PD-9.1555
HEXFET® POWER MOSFET
IRFNG40
N-CHANNEL
1000 Volt, 3.5HEXFET
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transis-
tors. The efficient geometry achieves very low on-
state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-es-
tablish advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, and high energy pulse circuits.
The Surface Mount Device (SMD-1) package repre-
sents another step in the continual evolution of sur-
face mount technology. The SMD-1 will give
designers the extra flexibility they need to increase
circuit board density. International Rectifier has en-
gineered the SMD-1 package to meet the specific
needs of the power market by increasing the size of
the termination pads, thereby enhancing thermal and
electrical performance.
Product Summary
Part Number BVDSS
IRFNG40
1000V
Features:
s Avalanche Energy Rating
s Dynamic dv/dt Rating
s Simple Drive Requirements
s Ease of Paralleling
s Hermetically Sealed
s Surface Mount
s Light-weight
RDS(on)
3.5
ID
3.9A
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current Œ
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy 
Avalanche Current Œ
Repetitive Avalanche Energy Œ
Peak Diode Recovery dv/dt Ž
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
IRFNG40
3.9
2.5
15.6
125
1.0
±20
530
3.9
12.5
1.0
-55 to 150
300 (for 5 seconds)
2.6 (typical)
Units
A
W
W/K 
V
mJ
A
mJ
V/ns
oC
g
To Order


International Rectifier Electronic Components Datasheet

IRFNG40 Datasheet

POWER MOSFET N-CHANNEL

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IRFNG40 Device
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
BVDSS/TJ
RDS(on)
VGS(th)
gfs
IDSS
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
1000
2.0
3.3
51
5.4
29
Typ. Max. Units
——
V
1.4 — V/°C
Test Conditions
VGS = 0V, ID = 1.0 mA
Reference to 25°C, ID = 1.0 mA
— 3.5
— 4.2
— 4.0
——
— 25
— 250
— 100
— -100
— 120
— 12
— 66
— 30
— 50
— 170
— 50
2.0 —
6.5 —
1700
250
100
V
S( )
µA
nA
nC
ns
VGS = 10V, ID = 2.5A
VGS = 10V, ID = 3.9A

VDS = VGS, ID = 250µA
VDS > 15V, IDS = 2.5A 
VDS = 0.8 x Max Rating,VGS = 0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =10V, ID = 3.9A
VDS = Max. Rating x 0.5
see figures 6 and 13
VDD = 500V, ID = 3.9A,
RG = 9.1, VGS = 10V
see figure 10
Measured from the Modified MOSFET
drain lead, 6mm (0.25 symbol showing the
in.) from package to internal inductances.
nH
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
VGS = 0V, VDS = 25V
pF f = 1.0 MHz
see figure 5
Source-Drain Diode Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode) Œ
— — 3.9 A Modified MOSFET symbol showing the
— — 15.6
integral reverse p-n junction rectifier.
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJPCB Junction-to-PC Board
— — 1.8 V
— — 1000 ns
— — 5.6 µC
Tj = 25°C, IS = 3.9A, VGS = 0V 
Tj = 25°C, IF = 3.9A, di/dt 100A/µs
VDD 50V 
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Min. Typ. Max. Units
— — 1.0
Test Conditions
— TBD — K/W Soldered to a copper clad PC board
To Order


Part Number IRFNG40
Description POWER MOSFET N-CHANNEL
Maker International Rectifier
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