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International Rectifier Electronic Components Datasheet

IRGPC20K Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

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IRGPC20K pdf
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PD - 9.1129
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Short circuit rated - 10µs @ 125°C, VGE = 15V
• Switching-loss rating includes all "tail" losses
• Optimized for high operating frequency (over
5kHz) See Fig. 1 for Current vs. Frequency
curve
C
G
E
n-channel
IRGPC20K
Short Circuit Rated
UltraFast IGBT
VCES = 600V
VCE(sat) 3.5V
@VGE = 15V, IC = 6.0A
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier
have higher usable current densities than comparable bipolar transistors,
while at the same time having simpler gate-drive requirements of the
familiar power MOSFET. They provide substantial benefits to a host of
high-voltage, high-current applications.
These new short circuit rated devices are especially suited for motor
control and other applications requiring short circuit withstand capability.
Absolute Maximum Ratings
TO -2 47 AC
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
tsc
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600
10
6.0
20
20
10
±20
5.0
60
24
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
µs
V
mJ
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
Typ.
0.24
6 (0.21)
Max.
2.1
40
Units
°C/W
g (oz)


International Rectifier Electronic Components Datasheet

IRGPC20K Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

No Preview Available !

IRGPC20K pdf
IRGPC20K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 —
V(BR)ECS Emitter-to-Collector Breakdown Voltage „ 20 —
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage— 0.37
V
V
V/°C
VCE(on)
Collector-to-Emitter Saturation Voltage — 2.4 3.5
— 3.6 — V
— 2.9 —
VGE(th)
Gate Threshold Voltage
3.0 — 5.5
VGE(th)/TJ Temperature Coeff. of Threshold Voltage — -11 — mV/°C
gfe Forward Transconductance … 1.9 3.3 — S
ICES
Zero Gate Voltage Collector Current
— — 250 µA
— — 1000
IGES Gate-to-Emitter Leakage Current
— — ±100 nA
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 1.0mA
IC = 6.0A
VGE = 15V
IC = 10A
See Fig. 2, 5
IC = 6.0A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 6.0A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
— 17 26
— 4.3 6.8
IC = 6.0A
nC VCC = 400V
See Fig. 8
— 6.4 11
VGE = 15V
— 29 —
— 18 —
— 58 90
— 120 200
TJ = 25°C
ns IC = 6.0A, VCC = 480V
VGE = 15V, RG = 50
Energy losses include "tail"
— 0.11 —
— 0.13 — mJ See Fig. 9, 10, 11, 14
— 0.24 0.31
10 — —
µs VCC = 400V, TJ = 125°C
VGE = 15V, RG = 50, VCPK < 500V
— 28 —
TJ = 150°C,
— 22 —
— 200 —
— 145 —
ns IC = 6.0A, VCC = 480V
VGE = 15V, RG = 50
Energy losses include "tail"
— 0.50 — mJ See Fig. 10, 14
— 13 — nH Measured 5mm from package
— 360 —
— 45 —
— 4.7 —
VGE = 0V
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
Notes:
 Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
‚ VCC=80%(VCES), VGE=20V, L=10µH,
RG= 50, ( See fig. 13a )
ƒ Repetitive rating; pulse width limited
by maximum juntion temperature.
… Pulse width 5.0µs,
single shot.
„ Pulse width 80µs; duty factor 0.1%.


Part Number IRGPC20K
Description INSULATED GATE BIPOLAR TRANSISTOR
Maker International Rectifier
Total Page 7 Pages
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