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International Rectifier Electronic Components Datasheet

IRHM57160 Datasheet

(IRHM5x160) RADIATION HARDENED POWER MOSFET THRU-HOLE

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IRHM57160 pdf
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PD - 93784F
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number Radiation Level
IRHM57160 100K Rads (Si)
IRHM53160 300K Rads (Si)
IRHM54160 600K Rads (Si)
IRHM58160 1000K Rads (Si)
RDS(on)
0.018
0.018
0.018
0.019
ID
35A*
35A*
35A*
35A*
IRHM57160
100V, N-CHANNEL
4# TECHNOLOGY
c
TO-254AA
International Rectifier’s R5TM technology provides Features:
high performance power MOSFETs for space appli- n Single Event Effect (SEE) Hardened
cations. These devices have been characterized for n Neutron Tolerant
Single Event Effects (SEE) with useful performance n Identical Pre- and Post-Electrical Test Conditions
up to an LET of 80 (MeV/(mg/cm2)). The combination n Repetitive Avalanche Ratings
of low RDS(on) and low gate charge reduces the power n Dynamic dv/dt Ratings
losses in switching applications such as DC to DC n Simple Drive Requirements
converters and motor control. These devices retain n Ease of Paralleling
all of the well established advantages of MOSFETs n Hermatically Sealed
such as voltage control, fast switching, ease of paral- n Electically Isolated
leling and temperature stability of electrical param- n Ceramic Eyelets
eters.
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
35*
35* A
140
250 W
2.0 W/°C
±20 V
500 mJ
35 A
25 mJ
3.4
-55 to 150
V/ns
oC
300 (0.063 in. /1.6 mm from case for 10s)
9.3 (Typical)
g
* Current is limited by internal wire diameter
For footnotes refer to the last page
www.irf.com
1
08/07/02


International Rectifier Electronic Components Datasheet

IRHM57160 Datasheet

(IRHM5x160) RADIATION HARDENED POWER MOSFET THRU-HOLE

No Preview Available !

IRHM57160 pdf
IRHM57160
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage 100 — — V
VGS = 0V, ID = 1.0mA
BVDSS/TJ Temperature Coefficient of Breakdown — 0.013 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
— — 0.018
VGS = 12V, ID = 35A
VGS(th)
gfs
IDSS
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
2.0 — 4.0 V
42 — — S ( )
— — 10 µA
— — 25
— — 100 nA
— — -100
— — 160
— — 45 nC
— — 65
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 35A
VDS= 80V ,VGS=0V
VDS = 80V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 35A
VDS = 50V
— — 35
— — 75 ns
— — 75
VDD = 50V, ID = 35A
VGS =12V, RG = 2.35
— — 35
— 6.8 — nH Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
— 5620 —
— 1583 —
— 50 —
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode) — — 35*
ISM Pulse Source Current (Body Diode)
— — 140
A
VSD Diode Forward Voltage
— — 1.2 V
trr Reverse Recovery Time
— — 270 ns
QRR Reverse Recovery Charge
— — 1.9 µC
Tj = 25°C, IS = 35A, VGS = 0V
Tj = 25°C, IF = 35A, di/dt 100A/µs
VDD 25V
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by internal wire diameter
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Min Typ Max Units
— — 0.50
— 0.21 —
— — 48
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2 www.irf.com


Part Number IRHM57160
Description (IRHM5x160) RADIATION HARDENED POWER MOSFET THRU-HOLE
Maker International Rectifier
Total Page 8 Pages
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