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International Rectifier Electronic Components Datasheet

IRHMJ57260SE Datasheet

RADIATION HARDENED POWER MOSFET SURFACE MOUNT

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IRHMJ57260SE pdf
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PD-96913
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (TO-254AA Tabless)
IRHMJ57260SE
200V, N-CHANNEL
5 TECHNOLOGY
™
Product Summary
Part Number Radiation Level
IRHMJ57260SE 100K Rads (Si)
RDS(on) ID
0.04935A*
TO-254AA Tabless
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Ratings
n Dynamic dv/dt Ratings
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electically Isolated
n Ceramic Eyelets
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
35*
28
140
208
1.67
±20
320
35
20.8
10
-55 to 150
300 (for 5s)
8.0 (Typical)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
12/24/04


International Rectifier Electronic Components Datasheet

IRHMJ57260SE Datasheet

RADIATION HARDENED POWER MOSFET SURFACE MOUNT

No Preview Available !

IRHMJ57260SE pdf
IRHMJ57260SE
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Pre-Irradiation
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
200
2.5
35
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Typ Max Units
——
V
0.27 — V/°C
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
— 0.049
VGS = 12V, ID = 28A Ã
— 4.5
——
— 10
— 25
— 100
— -100
— 165
— 45
— 75
— 35
— 125
— 80
— 50
6.8 —
5200
885
50
V
S( )
µA
nA
nC
ns
VDS = VGS, ID = 1.0mA
VDS = 15V, IDS = 28A Ã
VDS= 160V ,VGS=0V
VDS = 160V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 35A
VDS = 100V
VDD = 100V, ID = 35A
VGS =12V, RG = 2.35
nH Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
VGS = 0V, VDS = 25V
pF f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode) — — 35*
ISM Pulse Source Current (Body Diode) À
— — 140
A
VSD Diode Forward Voltage
— — 1.2 V
trr Reverse Recovery Time
— — 450 ns
QRR Reverse Recovery Charge
— — 6.5 µC
Tj = 25°C, IS = 35A, VGS = 0V Ã
Tj = 25°C, IF = 35A, di/dt 100A/µs
VDD 25V Ã
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Min Typ Max
— — 0.60
— 0.21 —
— — 48
Units
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2 www.irf.com


Part Number IRHMJ57260SE
Description RADIATION HARDENED POWER MOSFET SURFACE MOUNT
Maker International Rectifier
Total Page 8 Pages
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