http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




International Rectifier Electronic Components Datasheet

IRHMJ8250 Datasheet

(IRHMJx250) RADIATION HARDENED POWER MOSFET SURFACE MOUNT

No Preview Available !

IRHMJ8250 pdf
www.DataSheet4U.com
PD-96914
IRHMJ7250
RADIATION HARDENED
200V, N-CHANNEL
POWER MOSFET
RAD HardHEXFET® TECHNOLOGY
SURFACE MOUNT (TO-254AA Tabless)
Product Summary
Part Number Radiation Level
IRHMJ7250 100K Rads (Si)
IRHMJ3250 300K Rads (Si)
IRHMJ4250 600K Rads (Si)
IRHMJ8250 1000K Rads (Si)
RDS(on)
0.10
0.10
0.10
0.10
ID
26A
26A
26A
26A
International Rectifier’s RADHard HEXFET® technology
provides high performance power MOSFETs for
space applications. This technology has over a
decade of proven performance and reliability in
satellite applications. These devices have been
characterized for both Total Dose and Single Event
Effects (SEE). The combination of low Rdson and
low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
www.irf.com
TO-254AA Tabless
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Light Weight
26
16
104
150
1.2
±20
500
26
15
5.0
-55 to 150
300 (for 5s)
8.0 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
1
12/24/04


International Rectifier Electronic Components Datasheet

IRHMJ8250 Datasheet

(IRHMJx250) RADIATION HARDENED POWER MOSFET SURFACE MOUNT

No Preview Available !

IRHMJ8250 pdf
IRHMJ7250
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
200
2.0
8.0
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Typ Max Units
——
V
0.27 — V/°C
Test Conditions
VGS =0 V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
— 0.10
— 0.11
— 4.0
——
— 25
— 250
— 100
— -100
— 170
— 30
— 60
— 33
— 140
— 140
— 140
6.8 —
4700
850
210
V
S( )
µA
nA
nC
ns
VGS = 12V, ID = 16A
VGS = 12V, ID = 26A „
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 16A „
VDS= 160V,VGS=0V
VDS = 160V
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 12V, ID = 26A
VDS = 100V
VDD = 100V, ID = 26A,
VGS = 12V, RG = 2.35
nH Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
VGS = 0V, VDS = 25V
pF f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode) À
26
104
A
VSD Diode Forward Voltage
— — 1.4 V
trr Reverse Recovery Time
— — 820 nS
QRR Reverse Recovery Charge
— — 12 µC
Tj = 25°C, IS = 26A, VGS = 0V Ã
Tj = 25°C, IF = 26A, di/dt 100A/µs
VDD 25V Ã
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-sink
Junction-to-Ambient
Min Typ Max Units
— 0.83
0.21 —
°C/W
— — 48
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier website.
For footnotes refer to the last page
2 www.irf.com


Part Number IRHMJ8250
Description (IRHMJx250) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
Maker International Rectifier
Total Page 12 Pages
PDF Download
IRHMJ8250 pdf
Download PDF File


Buy Electronic Components




Related Datasheet

1 IRHMJ8250 (IRHMJx250) RADIATION HARDENED POWER MOSFET SURFACE MOUNT International Rectifier
International Rectifier
IRHMJ8250 pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components