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International Rectifier Electronic Components Datasheet

IRL3803V Datasheet

Power MOSFET

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IRL3803V pdf
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
www.irf.com
PD - 94734
IRL3803V
HEXFET® Power MOSFET
D
VDSS = 30V
RDS(on) = 5.5m
ID = 140A‡
S
TO-220AB
Max.
140‡
110
470
200
1.4
± 16
71
20
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Typ.
–––
0.50
–––
Max.
0.74
–––
62
Units
°C/W
1
7/21/03


International Rectifier Electronic Components Datasheet

IRL3803V Datasheet

Power MOSFET

No Preview Available !

IRL3803V pdf
IRL3803V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min. Typ. Max. Units
30 ––– ––– V
––– 0.028 ––– V/°C
––– ––– 5.5 m
––– ––– 7.5
1.0 ––– ––– V
82 ––– ––– S
––– ––– 25 µA
––– ––– 250
––– ––– 100
nA
––– ––– -100
––– ––– 76
––– ––– 19 nC
––– ––– 35
––– 16 –––
––– 180 –––
––– 29 –––
––– 37 –––
LD Internal Drain Inductance
LS Internal Source Inductance
––– 4.5 –––
––– 7.5 –––
nH
Ciss Input Capacitance
––– 3720 –––
Coss
Output Capacitance
––– 1480 –––
Crss Reverse Transfer Capacitance
––– 270 –––
EAS
Single Pulse Avalanche Energy‚
––– 1560…400†
Source-Drain Ratings and Characteristics
pF
mJ
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 71A „
VGS = 4.5V, ID = 59A „
VDS = VGS, ID = 250µA
VDS = 25V, ID = 71A„
VDS = 30V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 150°C
VGS = 16V
VGS = -16V
ID = 71A
VDS = 24V
VGS = 4.5V, See Fig. 6 and 13
VDD = 15V
ID = 71A
RG = 1.3
VGS = 4.5V, See Fig. 10 „
Between lead,
6mm (0.25in.)
from package
G
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
IAS = 71A, L = 0.16mH
D
S
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 140‡
––– ––– 470
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.2 V TJ = 25°C, IS = 71A, VGS = 0V „
––– 52 78 ns TJ = 25°C, IF = 71A
––– 91 140 nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
‚ Starting TJ = 25°C, L = 160µH
RG = 25, IAS = 71A, VGS=10V (See Figure 12)
ƒ ISD 71A, di/dt 110A/µs, VDD V(BR)DSS,
TJ 175°C
„ Pulse width 400µs; duty cycle 2%.
… This is a typical value at device destruction and represents
operation outside rated limits.
† This is a calculated value limited to TJ = 175°C .
‡ Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
2 www.irf.com


Part Number IRL3803V
Description Power MOSFET
Maker International Rectifier
Total Page 8 Pages
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