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International Rectifier Electronic Components Datasheet

IRLML2244TRPbF Datasheet

HEXFET Power MOSFET

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IRLML2244TRPbF pdf
VDS
VGS Max
RDS(on) max
(@VGS = -4.5V)
RDS(on) max
(@VGS = -2.5V)
-20
± 12
54
95
V
V
mΩ
mΩ
PD - 97631
IRLML2244TRPbF
HEXFET® Power MOSFET
G1
3D
S 2 Micro3TM (SOT-23)
IRLML2244TRPbF
Application(s)
System/Load Switch
Features and Benefits
Features
Low RDS(on) ( 54mΩ)
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Consumer qualification
Benefits
Lower switching losses
Multi-vendor compatibility
results in Easier manufacturing
Environmentally friendly
Increased reliability
Absolute Maximum Ratings
Symbol
Parameter
Max.
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
-20
-4.3
-3.4
-18
1.3
0.8
0.01
VGS
TJ, TSTG
Gate-to-Source Voltage
Junction and Storage Temperature Range
± 12
-55 to + 150
Thermal Resistance
Symbol
Parameter
eRθJA Junction-to-Ambient
fRθJA Junction-to-Ambient (t<10s)
Typ.
–––
–––
Max.
100
99
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes  through „ are on page 10
www.irf.com
Units
V
A
W
W/°C
V
°C
Units
°C/W
1
1/24/11


International Rectifier Electronic Components Datasheet

IRLML2244TRPbF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRLML2244TRPbF pdf
IRLML2244TRPbF
Electric Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-20 ––– –––
V VGS = 0V, ID = -250μA
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.01 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
42
71
d54 mΩ VGS = -4.5V, ID = -4.3A
d95 VGS = -2.5V, ID = -3.4A
VGS(th)
Gate Threshold Voltage
-0.4 ––– -1.1
V VDS = VGS, ID = -10μA
IDSS
Drain-to-Source Leakage Current
––– ––– 1
μA VDS =-16V, VGS = 0V
––– ––– 150
VDS = -16V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– -100 nA VGS = 12V
Gate-to-Source Reverse Leakage
––– ––– 100
VGS = -12V
RG Internal Gate Resistance
––– 8.9 ––– Ω
gfs Forward Transconductance
6.5 ––– –––
S VDS = -10V, ID =-4.3A
Qg Total Gate Charge
––– 6.9 –––
ID = -4.3A
Qgs Gate-to-Source Charge
––– 1.0 ––– nC VDS =-10V
dQgd
Gate-to-Drain ("Miller") Charge
––– 2.9 –––
VGS = -4.5V
dtd(on) Turn-On Delay Time
––– 7.0 –––
VDD =-10V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 12 ––– ns ID = -1A
––– 34 –––
RG = 6.8Ω
tf Fall Time
––– 25 –––
VGS = -4.5V
Ciss Input Capacitance
––– 570 –––
VGS = 0V
Coss Output Capacitance
––– 160 ––– pF VDS = -16V
Crss
Reverse Transfer Capacitance
––– 110 –––
ƒ = 1.0KHz
Source - Drain Ratings and Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
––– ––– -1.3
––– ––– -18
––– ––– -1.2
MOSFET symbol
A showing the
integral reverse
G
D
p-n junction diode.
S
dV TJ = 25°C, IS = -4.3A, VGS = 0V
d––– 21 32 ns TJ = 25°C, VR = -16V, IF=-4.3A
––– 9.0 14 nC di/dt = 100A/μs
2 www.irf.com


Part Number IRLML2244TRPbF
Description HEXFET Power MOSFET
Maker International Rectifier
Total Page 10 Pages
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International Rectifier
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