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International Rectifier Electronic Components Datasheet

IRLU8203PBF Datasheet

SMPS MOSFET

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IRLU8203PBF pdf
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PD - 95095A
SMPS MOSFET
IRLR8203PbF
IRLU8203PbF
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
l Lead-Free
HEXFET® Power MOSFET
VDSS
30V
RDS(on) max
6.8m
ID
110A„
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
D-Pak
IRLR8203PbF
I-Pak
IRLU8203PbF
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Junction and Storage Temperature Range
Max.
30
± 20
110 „
76 „
120
140
69
0.92
-55 to + 175
Thermal Resistance
RθJC
RθJA
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Typ.
–––
–––
–––
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Max.
1.09
50
110
Units
V
V
A
W
W
W/°C
°C
Units
°C/W
Notes  through „ are on page 10
www.irf.com
1
12/06/04


International Rectifier Electronic Components Datasheet

IRLU8203PBF Datasheet

SMPS MOSFET

No Preview Available !

IRLU8203PBF pdf
www.DataSheet4U.com
IRLR/U8203PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
30 –––
––– 0.027
––– 5.6
––– 7.1
1.0 –––
––– –––
––– –––
––– –––
––– –––
–––
–––
6.8
9.0
3.0
20
100
200
-200
V
V/°C
m
V
µA
nA
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 15A ƒ
VGS = 4.5V, ID = 12A ƒ
VDS = VGS, ID = 250µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qoss
td(on)
tr
td(off)
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
35 ––– –––
––– 33 50
––– 5.7 8.5
––– 17 25
––– 23 34
––– 15 –––
––– 99 –––
––– 30 –––
S VDS = 15V, ID = 12A
ID = 12A
nC VDS = 24V
VGS = 4.5V ƒ
VGS = 0V, VDS = 10V
VDD = 15V
ns ID = 12A
RG = 6.8
tf Fall Time
Ciss Input Capacitance
––– 69 –––
––– 2430 –––
VGS = 4.5V ƒ
VGS = 0V
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
––– 1200 –––
––– 250 –––
VDS = 15V
pF ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy‚
Avalanche Current
Typ.
–––
–––
Max.
310
30
Units
mJ
A
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
2
Min.
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.75
0.65
48
62
49
67
Max. Units
110„
120
A
1.3 V
–––
72 ns
92 nC
74 ns
100 nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 12A, VGS = 0V ƒ
TJ = 125°C, IS = 12A, VGS = 0V ƒ
TJ = 25°C, IF = 12A, VR=15V
di/dt = 100A/µs ƒ
TJ = 125°C, IF = 12A, VR=15V
di/dt = 100A/µs ƒ
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Part Number IRLU8203PBF
Description SMPS MOSFET
Maker International Rectifier
Total Page 10 Pages
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