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International Rectifier Electronic Components Datasheet

Si4410DYPbF Datasheet

Power MOSFET

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Si4410DYPbF pdf
l N-Channel MOSFET
l Low On-Resistance
l Low Gate Charge
l Surface Mount
l Logic Level Drive
l Lead-Free
Description
This N-channel HEXFET® Power MOSFET is
produced using International Rectifier's advanced
HEXFET power MOSFET technology. The low on-
resistance and low gate charge inherent to this
technology make this device ideal for low voltage or
battery driven power conversion applications
The SO-8 package with copper leadframe offers
enhanced thermal characteristics that allow power
dissipation of greater that 800mW in typical board
mount applications.
PD - 95168
Si4410DYPbF
HEXFET® Power MOSFET
S1
S2
S3
G4
AA
8D
7D
VDSS = 30V
6D
5 D RDS(on) = 0.0135
Top View
SO-8
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
dv/dt
EAS
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Peak Diode Recovery dv/dt …
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambientƒ
Max.
30
±10
±8.0
±50
2.5
1.6
0.02
5.0
400
± 20
-55 to + 150
Max.
50
Units
V
A
W
W/°C
V/ns
mJ
V
°C
Units
°C/W
1
09/22/04


International Rectifier Electronic Components Datasheet

Si4410DYPbF Datasheet

Power MOSFET

No Preview Available !

Si4410DYPbF pdf
Si4410DYPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
30 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
––– 0.010 0.0135
––– 0.015 0.020
VGS = 10V, ID = 10A ‚
VGS = 4.5V, ID = 5.0A ‚
VGS(th)
Gate Threshold Voltage
1.0 ––– ––– V VDS = VGS, ID = 250µA
gfs Forward Transconductance
––– 35 ––– S VDS = 15V, ID = 10A
IDSS Drain-to-Source Leakage Current
––– ––– 1.0
––– ––– 25
µA
VDS = 30V, VGS = 0V
VDS = 30V, VGS = 0V, TJ = 55°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100 nA VGS = -20V
––– ––– 100
VGS = 20V
Qg Total Gate Charge
––– 30 45
ID = 10A
Qgs Gate-to-Source Charge
––– 5.4 ––– nC VDS = 15V
Qgd Gate-to-Drain ("Miller") Charge
––– 6.5 –––
VGS = 10V, See Fig. 10 ‚
td(on)
Turn-On Delay Time
––– 11 –––
VDD = 25V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 7.7 ––– ns ID = 1.0A
––– 38 –––
RG = 6.0
tf Fall Time
––– 44 –––
RD = 25, ‚
Ciss Input Capacitance
––– 1585 –––
VGS = 0V
Coss Output Capacitance
––– 739 ––– pF VDS = 15V
Crss Reverse Transfer Capacitance
––– 106 –––
ƒ = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Diode Conduction)ƒ
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.7
50
Max.
2.3
50
1.1
80
Units
A
V
ns
Conditions
MOSFET symbol
showing the
integral reverse
G
p-n junction diode.
TJ = 25°C, IS = 2.3A, VGS = 0V ‚
TJ = 25°C, IF = 2.3A
D
S
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width 300µs; duty cycle 2%.
ƒ When mounted on FR4 Board, t 10 sec
„ Starting TJ = 25°C, L = 8.0mH
RG = 25, IAS = 10A. (See Figure 15)
… ISD 2.3A, di/dt 130A/µs, VDD V(BR)DSS,
TJ 150°C
2 www.irf.com


Part Number Si4410DYPbF
Description Power MOSFET
Maker International Rectifier
Total Page 8 Pages
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