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KEC
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KDS221V Datasheet Preview

KDS221V Datasheet

SILICON EPITAXIAL PLANAR DIODE

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KDS221V pdf
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Low Forward Voltage : VF=1.0V (Max.).
Small Package : VSM.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Maximum (Peak) Reverse Voltage
VRM
Reverse Voltage
VR
Maximum (Peak) Forward Current
IFM
Average Forward Current
IO
Surge Current (1 s)
IFSM
Power Dissipation
PD
Junction Temperature
Tj
Storage Temperature Range
Tstg
Note : * Unit Rating. Total Rating=Unit Rating x 0.7
RATING
20
20
200 *
100 *
300 *
100
150
-55 150
UNIT
V
V
mA
mA
mA
mW
KDS221V
SILICON EPITAXIAL PLANAR DIODE
E
B
2
13
PP
1. CATHODE 1
2. ANODE 2
3. ANODE 1 / CATHODE 2
DIM
A
B
C
D
E
G
H
J
K
P
MILLIMETERS
1.2 +_0.05
0.8 +_0.05
0.5 +_ 0.05
0.3 +_ 0.05
1.2 +_ 0.05
0.8 +_ 0.05
0.40
0.12+_ 0.05
0.2 +_ 0.05
5
3
21
VSM
Marking
DS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
VF
Reverse Current
IR
TEST CONDITION
IF=10mA
VR=15V
MIN.
-
-
TYP.
-
-
MAX.
1.0
0.1
UNIT
V
A
2w00w3w. 1.D0a. t2a8Sheet4U.net
Revision No : 0
1/2



KEC
KEC

KDS221V Datasheet Preview

KDS221V Datasheet

SILICON EPITAXIAL PLANAR DIODE

No Preview Available !

KDS221V pdf
KDS221V
I F - VF
100
D1 D1+D2
10
1
0.1
0.01
0
0.4 0.8 1.2 1.6 2.0
FORWARD VOLTAGE VF (V)
2.4
100
10
1
0.1
0.01
0
I F - VF
D2
0.4 0.8 1.2
FORWARD VOLTAGE VF (V)
1.6
100
10
1
0.1
0.01
0
I R - VR
Ta=125 C
Ta=125 C
Ta=100 C
Ta=100 C
Ta=75 C
Ta=75 C
D1
D2
D1
D2
D1
D2
5 10
REVERSE VOLTAGE VR (V)
15
C T - VR
10
f=1MHz
5 (D2)
3
(D1)
(D1+D2)
1
0.5
0.5
1 3 10
REVERSE VOLTAGE VR (V)
30
2003. 10. 28
Revision No : 0
2/2


Part Number KDS221V
Description SILICON EPITAXIAL PLANAR DIODE
Maker KEC
Total Page 2 Pages
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