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KDV215E Datasheet Preview

KDV215E Datasheet

SILICON EPITAXIAL PLANAR DIODE

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KDV215E pdf
SEMICONDUCTOR
TECHNICAL DATA
TV TUNING.
FEATURES
High Capacitance Ratio : C2V/C25V=6.5(Typ.)
Low Series Resistance : rS=0.4 (Typ.)
Excellent C-V Characteristics, and Small Tracking Error.
Useful for Small Size Tuner.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
VR
Peak Reverse Voltage
VRM
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING
30
35(RL=10k )
125
-55 125
UNIT
V
V
KDV215E
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
C
1
2
D
1. ANODE
2. CATHODE
E
F
DIM
A
B
C
D
E
F
G
MILLIMETERS
1.60 +_0.10
1.20 +_0.10
0.80 +_0.10
0.30+_ 0.05
0.60+_ 0.10
0.13+_ 0.05
0.20+_ 0.10
ESC
Marking
Type Name
TA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Current
IR
Reverse Current
IR
Capacitance
C2V
Capacitance
C25V
Capacitance Ratio
C2V/C25V
Series Resistance
rS
Note : Available in matched group for capacitance to 2.0%.
C(Max.)-C(Min.)
0.02
C(Min.)
(VR=2~25V)
TEST CONDITION
VR=30V
VR=30V, (Ta=60 )
VR=2V, f=1MHz
VR=25V, f=1MHz
VR=5V, f=470MHz
MIN.
-
-
14.16
2.11
5.90
-
TYP.
-
-
-
-
6.50
0.4
MAX.
10
100
16.25
2.43
7.15
0.55
UNIT
nA
nA
pF
pF
-
2014. 3. 31
Revision No : 4
1/2



KEC
KEC

KDV215E Datasheet Preview

KDV215E Datasheet

SILICON EPITAXIAL PLANAR DIODE

No Preview Available !

KDV215E pdf
KDV215E
C T - VR
100
f=1MHz
50 Ta=25 C
30
10
5
3
1
0 4 8 12 16 20 24 28
REVERSE VOLTAGE VR (V)
0.8
0.6
0.4
0.2
0
1
r s - VR
f=470MHz
Ta=25 C
35
10
REVERSE VOLTAGE VR (V)
30
3
f=1MHz
2
1
0
C - Ta
VR=2V
14
20
25
-1
-2
-40 -20
0
20 40 60 80
AMBIENT TEMPERATURE Ta ( C)
C(Ta) - C(25)
NOTE : C(%) =
100
C(25)
2014. 3. 31
Revision No : 4
2/2


Part Number KDV215E
Description SILICON EPITAXIAL PLANAR DIODE
Maker KEC
Total Page 2 Pages
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