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LSBTH10T1G Datasheet Preview

LSBTH10T1G Datasheet

VHF/UHF Transistors

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LSBTH10T1G pdf
LESHAN RADIO COMPANY, LTD.
VHF/UHF Transistors
z Pb-Free Package is Available.
z S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
Ordering Information
Device
LSBTH10T1G
S-LSBTH10T1G
LSBTH10T3G
S-LSBTH10T3G
Marking
H8A
H8A
Shipping
3000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
V CEO
V CBO
V EBO
Value
25
30
3.0
Unit
Vdc
Vdc
Vdc
LSBTH10T1G
S-LSBTH10T1G
SC-74
(6) (5) (4)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4 mW/°C
417
–55 to +150
°C/W
°C
DEVICE MARKING
(S-)LSBTH10 T1G = M6
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = 1.0 mAdc, I B= 0 )
Collector–Base Breakdown Voltage
(I C = 100 µAdc , I E = 0)
Emitter–Base Breakdown Voltage
(I E = 10 µAdc , I C= 0)
Collector Cutoff Current
( V CB = 25Vdc , I E = 0 )
Emitter Cutoff Current
( V EB = 2.0Vdc , I C= 0 )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V (BR)CEO
V (BR)CBO
V (BR)EBO
I CBO
I EBO
25
30
3.0
Typ
(1) (2)
(3)
Max Unit
— Vdc
— Vdc
— Vdc
100 nAdc
100 nAdc
Rev.O 1/7



LRC
LRC

LSBTH10T1G Datasheet Preview

LSBTH10T1G Datasheet

VHF/UHF Transistors

No Preview Available !

LSBTH10T1G pdf
LESHAN RADIO COMPANY, LTD.
LSBTH10T1G , S-LSBTH10T1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
ON CHARACTERISTICS
DC Current Gain
(I C = 4.0 mAdc, V CE = 10 Vdc)
Collector–Emitter Saturation Voltage
(I C = 4.0mAdc, I B = 0.4 mAdc)
Base–Emitter On Voltage
(I C = 4.0mAdc, V CE = 10Vdc)
hFE
VCE(sat)
V BE
60
SMALL–SIGNAL CHARACTERISTICS
Current Gain–Bandwidth Product
(V CE = 10 Vdc, I C = 4.0mAdc, f = 100MHz)
Collector –Base Capacitance
(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)
Collector –Base Feedback Capacitance
(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)
Collector Base Time Constant
( I C = 4.0mAdc,V CB=10 Vdc, f = 31.8 MHz)
fT
C cb
C rb
rb’ C C
650
Typ
Max Unit
—-
0.5 Vdc
0.95 Vdc
— MHz
0.7 pF
0.65 pF
9.0 ps
Rev.O 2/7


Part Number LSBTH10T1G
Description VHF/UHF Transistors
Maker LRC
Total Page 7 Pages
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