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SRDA05-4BTG Datasheet Preview

SRDA05-4BTG Datasheet

TVS Diode Arrays

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SRDA05-4BTG pdf
TVS Diode Arrays (SPA® Diodes)
Lightning Surge Protection- SRDA05 Series
SRDA05 Series 8pF 30A Diode Array
RoHS Pb GREEN
Description
The SRDA05 integrates low capacitance rail-to-rail diodes
with an additional zener diode to protect I/O pins against
ESD and lightning induced surge events. This robust device
can safely absorb up to 30A per IEC61000-4-5 (tp=8/20μs)
without performance degradation and a minimum ±30kV
ESD per IEC61000-4-2 international standard. Its low
loading capacitance makes it ideal for high-speed interface
protection.
Pinout
I/O 1 1
8 Ref 2
Ref 1 2
7 I/O 4
Ref 1 3
6 I/O 3
I/O 2 4
5 Ref 2
SOIC-8 (Top View)
Note: Pinout diagrams above shown as device footprint on circuit board.
Functional Block Diagram
I/O 1 Ref 1
I/O 2
I/O 4 Ref 2 I/O 3
Additional Information
Datasheet
Resources
Samples
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
Features
• Lightning protection,
IEC61000-4-5, 30A
(8/20µs)
• EFT, IEC61000-4-4, 50A
(5/50ns)
• ESD, IEC61000-4-2,
±30kV contact, ±30kV air
• Low clamping voltage
• Low leakage current
• SOIC-8 surface mount
package (JEDEC MS-012)
Applications
• Tertiary (IC Side)
Protection:
- T1/E1/T3/E3
- HDSL/SDSL
- Ethernet
• RS232, RS485
Application Example
R Tip
• Video Line Protection
• Security Cameras
• Storage DVRs
• Network Equipment
• Instrumentation, Medical
Equipment
R Ring
T1/E1/ T 3 / E 3
Transceiver
T Tip
85
SRDA05-4
14
T Ring
T1/E1/T3/E3 Interface Protection
© 2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/20/13



Littelfuse
Littelfuse

SRDA05-4BTG Datasheet Preview

SRDA05-4BTG Datasheet

TVS Diode Arrays

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SRDA05-4BTG pdf
TVS Diode Arrays (SPA® Diodes)
Lightning Surge Protection- SRDA05 Series
Absolute Maximum Ratings
Thermal Information
Symbol
Ppk
Ipp
Top
TSTOR
Parameter
Peak Pulse Power (8/20µs)
Peak Pulse Current (8/20µs)
Operating Temperature
Storage Temperature
Value
600
30
–40 to 125
–55 to 150
Units
W
A
°C
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied.
Parameter
SOIC Package
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
Maximum Lead Temperature (Soldering
20-40s) (SOIC - Lead Tips Only)
Electrical Characteristics (TOP = 25°C)
Parameter
Symbol
Test Conditions
Reverse Stand-Off Voltage
VRWM
IT≤1µA
Reverse Leakage Current
IR
VR= 5V
Reverse Breakdown Voltage
Clamping Voltage, Line-Ground1
Clamping Voltage, Line-Ground1
VBR
VC
VC
It = 1mA
IPP= 1A, tp=8/20 µs
IPP= 2A, tp=8/20 µs
Clamping Voltage, Line-Ground1
VC
IPP= 10A, tp=8/20 µs
Clamping Voltage, Line-Ground1
VC
IPP= 25A, tp=8/20 µs
Dynamic Resistance, Line-Ground1
ESD Withstand Voltage1
RDYN
VESD
( VC2-VC1)/(IPP2-IPP1)
IEC61000-4-2 (Contact Discharge)
IEC61000-4-2 (Air Discharge)
Diode Capacitance1
CI/O-I/O
CI/O-GND
Reverse Bias=0V
Reverse Bias=0V
1 Parameter is guaranteed by design and/or device characterization.
Min
-
-
6
-
-
-
-
-
±30
±30
-
-
Typ
-
-
-
9.2
10.0
14.5
21.0
0.8
-
4.0
8.0
Rating
170
–40 to 125
–55 to 150
150
260
Units
°C/W
°C
°C
°C
°C
Max
5.0
10
-
-
-
-
-
-
-
-
-
Units
V
µA
V
V
V
V
V
kV
kV
pF
pF
Normalized Capacitance vs. Bias Voltage
Non-Repetitive Peak Pulse Power vs. Pulse Time
2.5
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Bias Voltage (V)
10
1
0.1
0.01
0.1
1 10 100
Pulse Duration-tp(µS)
1000
© 2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/20/13


Part Number SRDA05-4BTG
Description TVS Diode Arrays
Maker Littelfuse
Total Page 4 Pages
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