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M-pulse Microwave
M-pulse Microwave

MP4TD1170 Datasheet Preview

MP4TD1170 Datasheet

Silicon Bipolar MMIC Cascadable Amplifier

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MP4TD1170 pdf
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
MP4TD1170
Features
High Dynamic Range Cascadable 50Ω/75Ω Gain Block
3dB Bandwidth: 50 MHz to 1.0 GHz
17.0 dBm Typical P1dB @ 1.0 GHz
12 dB Typical Gain @ 0.5 GHz
4.0 dB Typical Noise Figure @ 1.0 GHz
Hermetic Gold-Ceramic Microstrip Package
Tape and Reel Packaging Available
Description
M-Pulse's MP4TD1170 is a high performance silicon
bipolar MMIC housed in a hermetic high reliability
package. The MP4TD1170 is designed for use in 50Ω
or 75Ω systems where a high dynamic range and low
distortion gain block is required. Typical applications
include narrow and wide band IF and RF amplifiers in
industrial and military applications.
Gold-Ceramic Microstrip Package Outline1,2
.040
1,02
4 GND
RF INPUT
1
RF OUT
AND BIAS
3
.020
0,51
.004 ±.002
0,1±0,05
2 GND
.070
1,78
.035
0,89
The MP4TD1170 is fabricated using a 10 GHz fT silicon
bipolar technology that features gold metalization and IC
passivation for increased performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY
14
12
Id=60mA
10
8
6
4
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0
0.1
1
FREQUENCY (GHz)
10
.495 ±.030
12,57 ±0,76
Notes: (unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance: in .xxx = ±.005; mm .xx = ±.13
Pin Configuration
Pin Number
Pin Description
1 RF Input
2&4
AC/DC Ground
3 RF Output and DC Bias
Ordering Information
Model No.
MP4TD1170
MP4TD1170T
Package
Hermetic Ceramic
Tape and Reel
Electrical Specifications @ TA = +25°C, Id = 60 mA, Z0 = 50Ω
Symbol Parameters
Test Conditions
Gp Power Gain (S212)
f = 0.1 GHz
ΔGp Gain Flatness
f = 0.1 to 0.7 GHz
f3dB 3 dB Bandwidth
ref 50 MHz Gain
SWRin Input SWR
f = 0.1 to 2.0 GHz
SWRout Output SWR
f = 0.1 to 2.0 GHz
P1dB Output Power @ 1 dB Gain Compression f = 0.7 GHz
NF 50 Ω Noise Figure
f = 0.7 GHz
IP3 Third Order Intercept Point
f = 1.0 GHz
tD Group Delay
f = 1.0 GHz
Vd Device Voltage
-
dV/dT Device Voltage Temperature Coefficient
-
Units
dB
dB
GHz
-
-
dBm
dB
dBm
ps
V
mV/°C
Min.
11.5
-
-
-
-
16.0
-
-
-
4.5
-
Typ.
12.5
±0.9
1.0
1.8
1.9
17.0
4.0
30.0
160
5.5
-8.0
Max.
13.5
±1.1
-
-
-
-
4.5
-
-
6.5
-
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________
PH (408) 432-1480 FX (408) 432-3440
1



M-pulse Microwave
M-pulse Microwave

MP4TD1170 Datasheet Preview

MP4TD1170 Datasheet

Silicon Bipolar MMIC Cascadable Amplifier

No Preview Available !

MP4TD1170 pdf
SiliconBipolar MMIC Cascadable Amplifier
Absolute Maximum Ratings1
Parameter
Absolute Maximum
Device Current
90 mA
Power Dissipation2,3
560 mW
RF Input Power
+20 dBm
Junction Temperature
200°C
Storage Temperature
-65°C to +200°C
Thermal Resistance: θjc = 135°C/W
1. Exceeding these limits may cause permanent damage.
2. Case Temperature (Tc) = 25 °C.
3. Derate at 7.4 mW/°C for Tc > 124°C.
MP4TD1170
Typical Bias Configuration
Vcc - Vd
Id = Rbias
Rbias
Vcc > 7.5 V
RFC (Optional)
4
C (DC Block)
IN
MP4TD1170
3
C (DC Block)
1 Vd = 5.5 V
2
OUT
Typical Performance Curves @ Id = 60 mA, TA = +25°C (unless otherwise noted)
DEVICE CURRENT vs DEVICE VOLTAGE
120
100
80
60
40
20
0
012
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345
Vd, DEVICE VOLTAGE (V)
6
7
8
POWER GAIN vs CURRENT
14
12
10
8
6
4
2
0
20
40 60
Id, DEVICE CURRENT (mA)
0.1 GH z
0.5 GH z
1.0 GH z
2.0 GH z
80
100
RETURN LOSS vs FREQUENCY
-6
-8
-10
-12
-14
-16
-18
-20
0.1
1
FREQUENCY (GHz)
INPUT
OUTPUT
10
POUT @ 1dB GAIN COMPRESSION
vs FREQUENCY
23
21 Id=75mA
19
Id=60mA
17
15
Id=40mA
13
11
0.1
1
FREQUENCY (GH z)
10
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________
PH (408) 432-1480 FX (408) 432-3440
2


Part Number MP4TD1170
Description Silicon Bipolar MMIC Cascadable Amplifier
Maker M-pulse Microwave
Total Page 3 Pages
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