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MT28C3212P2 Datasheet Preview

MT28C3212P2 Datasheet

FLASH AND SRAM COMBO MEMORY

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MT28C3212P2 pdf
FLASH AND SRAM
COMBO MEMORY
2 MEG x 16 PAGE FLASH
128K x 16 SRAM COMBO MEMORY
MT28C3212P2FL
MT28C3212P2NFL
Low Voltage, Extended Temperature
FEATURES
• Flexible dual-bank architecture
• Support for true concurrent operations with no
latency:
Read bank b during program bank a and vice versa
Read bank b during erase bank a and vice versa
• Organization: 2,048K x 16 (Flash)
128K x 16 (SRAM)
• Basic configuration:
Flash
Bank a (4Mb Flash for data storage)
– Eight 4K-word parameter blocks
– Seven 32K-word blocks
Bank b (28Mb Flash for program storage)
– Fifty-six 32K-word main blocks
SRAM
2Mb SRAM for data storage
– 128K-words
• F_VCC, VCCQ, F_VPP, S_VCC voltages1
1.65V (MIN)/1.95V (MAX) F_VCC read voltage or
1.80V (MIN)/2.20V (MAX) F_VCC read voltage
1.65V (MIN)/1.95V (MAX) S_VCC read voltage or
1.80V (MIN)/2.20V (MAX) S_VCC read voltage
1.65V (MIN)/1.95V (MAX) VCCQ or
1.80V (MIN)/2.20V (MAX) VCCQ
1.80V (TYP) F_VPP (in-system PROGRAM/ERASE)
0.0V (MIN)/2.20V (MAX) F_VPP (in-system
PROGRAM/ERASE)2
12V ±5% (HV) F_VPP (production programming
compatibility)
• Asynchronous access time1
Flash access time: 100ns or 110ns @ 1.65V F_VCC
SRAM access time: 100ns @ 1.65V S_VCC
• Page Mode read access1
Interpage read access: 100ns/110ns @ 1.65V F_VCC
Intrapage read access: 35ns/45ns @ 1.65V F_VCC
• Low power consumption
• Enhanced suspend options
ERASE-SUSPEND-to-READ within same bank
PROGRAM-SUSPEND-to-READ within same bank
ERASE-SUSPEND-to-PROGRAM within same bank
• Read/Write SRAM during program/erase of Flash
• Dual 64-bit chip protection registers for security
purposes
• PROGRAM/ERASE cycles
100,000 WRITE/ERASE cycles per block
BALL ASSIGNMENT
66-Ball FBGA (Top View)
1
A NC
2 3 4 5 6 7 8 9 10 11
NC A20 A11 A15 A14 A13 A12 F_VSS VccQ NC
12
NC
B A16 A8 A10 A9 DQ15 S_WE# DQ14 DQ7
C F_WE# NC
DQ13 DQ6 DQ4 DQ5
D S_VSS F_RP#
DQ12 S_CE2 S_VCC F_VCC
E
F_WP# F_VPP A19 DQ11
DQ10 DQ2 DQ3
F
S_LB# S_UB# S_OE#
DQ9 DQ8 DQ0 DQ1
G A18 A17 A7 A6 A3 A2 A1 S_CE1#
H NC NC F_VCC A5 A4 A0 F_CE# F_VSS F_OE# NC NC NC
Top View
(Ball Down)
• Cross-compatible command set support
Extended command set
Common Flash interface (CFI) compliant
NOTE:
1. These specifications are guaranteed for operation
within either one of two voltage ranges, 1.65V–1.95V
or 1.80V–2.20V. Use only one of the two voltage
ranges for PROGRAM and ERASE operations.
2. MT28C3212P2NFL only.
OPTIONS
MARKING
• Timing
100ns
-10
110ns
-11
• Boot Block
Top T
Bottom
B
• VPP1 Range
0.9V–2.2V
None
0.0V–2.2V
N
• Operating Temperature Range
Commercial Temperature (0oC to +70oC) None
Extended Temperature (-40oC to +85oC) ET
• Package
66-ball FBGA (8 x 8 grid)
FL
Part Number Example:
MT28C3212P2FL-10 TET
2 Meg x 16 Page Flash 128K x 16 SRAM Combo Memory
MT28C3212P2FL_2.p65 – Rev. 2, Pub. 4/02
1
©2002, Micron Technology, Inc.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.



MICRON
MICRON

MT28C3212P2 Datasheet Preview

MT28C3212P2 Datasheet

FLASH AND SRAM COMBO MEMORY

No Preview Available !

MT28C3212P2 pdf
2 MEG x 16 PAGE FLASH
128K x 16 SRAM COMBO MEMORY
GENERAL DESCRIPTION
The MT28C3212P2FL and MT28C3212P2NFL com-
bination Flash and SRAM memory devices provide a
compact, low-power solution for systems where PCB
real estate is at a premium. The dual-bank Flash is a
high-performance, high-density, nonvolatile memory
device with a revolutionary architecture that can sig-
nificantly improve system performance.
This new architecture features:
• A two-memory-bank configuration supporting
dual-bank burst operation;
• A high-performance bus interface providing a fast
page data transfer; and
• A conventional asynchronous bus interface.
The device also provides soft protection for blocks
by configuring soft protection registers with dedicated
command sequences. For security purposes, dual 64-
bit chip protection registers are provided.
The embedded WORD WRITE and BLOCK ERASE
functions are fully automated by an on-chip write state
machine (WSM). The WSM simplifies these operations
and relieves the system processor of secondary tasks.
An on-chip status register, one for each bank, can be
used to monitor the WSM status to determine the
progress of a PROGRAM/ERASE command.
The erase/program suspend functionality allows
compatibility with existing EEPROM emulation soft-
ware packages.
The device takes advantage of a dedicated power
source for the Flash device (F_VCC) and a dedicated
power source for the SRAM device (S_VCC), both at
1.65V–1.95V or 1.80V–2.20V for optimized power con-
sumption and improved noise immunity. The
MT28C3212P2FL and MT28C3212P2NFL devices sup-
port two VPP voltage ranges, VPP1 and VPP2. VPP1 is an in-
circuit voltage of 0.9V–2.2V (MT28C3212P2FL) or 0.0V–
2.2V (MT28C3212P2NFL). VPP2 is the production com-
patibility voltage of 12V ±5%. The 12V ±5% VPP2 is sup-
ported for a maximum of 100 cycles and 10 cumulative
hours. See Table 1.
The MT28C3212P2FL and MT28C3212P2NFL de-
vices contain an asynchronous 2Mb SRAM organized
as 128K-words by 16 bits. These devices are fabricated
using an advanced CMOS process and high-speed/
ultra-low-power circuit technology.
The MT28C3212P2FL and MT28C3212P2NFL de-
vices are packaged in a 66-ball FBGA package with
0.80mm pitch.
DEVICE MARKING
Due to the size of the package, Micron’s standard
part number is not printed on the top of each device.
Instead, an abbreviated device mark comprised of a
five-digit alphanumeric code is used. The abbreviated
device marks are cross referenced to Micron part num-
bers in Table 2.
Table 1
VPP Voltage Ranges
DEVICE
MT28C3212P2FL
MT28C3212P2NFL
VOLTAGE RANGE
VPP1
VPP2
0.9V–2.2V 11.4V–12.6V
0.0V–2.2V 11.4V–12.6V
Table 2
Cross Reference for Abbreviated Device Marks
PART NUMBER
MT28C3212P2FL-10 BET
MT28C3212P2FL-10 TET
MT28C3212P2FL-11 BET
MT28C3212P2FL-11 TET
MT28C3212P2NFL-11 TET
PRODUCT
MARKING
FW443
FW442
FW444
FW433
FW445
SAMPLE
MARKING
FX443
FX442
FX444
FX433
FX445
MECHANICAL
SAMPLE MARKING
FY443
FY442
FY444
FY433
FY445
2 Meg x 16 Page Flash 128K x 16 SRAM Combo Memory
MT28C3212P2FL_2.p65 – Rev. 2, Pub. 4/02
2 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.


Part Number MT28C3212P2
Description FLASH AND SRAM COMBO MEMORY
Maker MICRON
Total Page 30 Pages
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