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MT Semiconductor
MT Semiconductor

MT3245 Datasheet Preview

MT3245 Datasheet

N-Channel Power MOSFET

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MT3245 pdf
MOS-TECH Semiconductor Co.,LTD
07
N-Channel Power MOSFET
4V, A, mΩ
Features
• RDS(on) = 3mΩ (Typ.)@ VGS = 10V, ID = 80A
• Qg(tot) = 345nC (Typ.)@ VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• RoHS Compliant
January 2010
Application
• Automotive Engine Control
• Powertrain Management
• Motors, Solenoids
• Electronic Steering
• Integrated Starter/ Alternator
• Distributed Power Architectures and VRMs
• Primary Switch for 12V Systems
D
GDS
TO-220

G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-
-
-
Continuous
Continuous
Continuous
(TC
(TC
(TC
=
=
=
25oC, Silicon Limited)
100oC, Silicon Limited)
25oC, Package Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 2)
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 100A.
Thermal Characteristics
Ratings
45
±20
120*
90*
35
400
1232
206
2.04
-55 to +175
200
RθJC
RθCS
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink (Typ.)
Thermal Resistance, Junction to Ambient
0.79
0.8
69.5
Units
V
V
A
A
mJ
W
W/oC
oC
oC
oC/W
oC/W
oC/W
©2010 MOS-TECH Semiconductor Corporation
MT3245 Rev. A
1
www.mtsemi.com



MT Semiconductor
MT Semiconductor

MT3245 Datasheet Preview

MT3245 Datasheet

N-Channel Power MOSFET

No Preview Available !

MT3245 pdf
Package Marking and Ordering Information
Device Marking
MT3245
Device
MT3245
Package
TO-220
Reel Size
N/A
Tape Width
N/A
Quantity
50units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
On Characteristics
VGS = 0V, ID = 250μV
VDS = 32V
-- -- 1 μA
VGS = 0V
TC = 150oC
--
-- 250 μA
VGS = ±20V
-- -- ±100 nA
VGS(th)
RDS(on)
Gate to Source Threshold Voltage
Static Drain-Source On-Resistance
Dynamic Characteristics
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 80A
VGS = 10V, ID = 80A
VTCGS==17150oVC, ID = 80A,
1 -- 3 V
-- 5 6
-- 3
4 mΩ
-- 6
7
Ciss
Coss
Crss
RG
Qg(tot)
Qg(2)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V,
f = 1.0MHz
VGS = 0.5V, f = 1MHz
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 20V
ID = 80A
Ig = 1.0mA
-- 15500 20110 pF
--
1740 2050
pF
--
1500 2000
pF
-- 1.1 --
Ω
-- 345 450 nC
-- 32.5 --
nC
-- 49 -- nC
-- 16.5 --
nC
-- 74 -- nC
Switching Characteristics (VGS = 10V)
tON Turn-On Time
td(on)
tr
td(off)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
VDD = 20V,ID = 80A
VGS = 10V, RGEN = 7Ω
tf Fall Time
tOFF Turn-Off Time
Drain-Source Diode Characteristics and Maximum Ratings
--
175 360
ns
-- 43 95 ns
--
130 275
ns
--
435 875
ns
--
290 590
ns
--
730 1470
ns
VSD
trr
QRR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD = 80A
ISD = 40A
ISD = 75A, dISD/dt = 100A/μs
ISD = 75A, dISD/dt = 100A/μs
-- -- 1.25 V
-- -- 1.0 V
-- 59 -- ns
-- 77 -- nC
NOTES:
1: Pulse width limited by maximum junction temperature.
2: Starting TJ = 25°C, L = 1mH, IAS = 58A, VDD = 36V, VGS = 10V.
MT3245 Rev. A
2 www.mtsemi.com


Part Number MT3245
Description N-Channel Power MOSFET
Maker MT Semiconductor
Total Page 9 Pages
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