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MT18HVF12872 Datasheet Preview

MT18HVF12872 Datasheet

1GB DDR2 VLP Registered DIMM

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MT18HVF12872 pdf
1GB (x72, ECC, SR) 240-Pin DDR2 VLP RDIMM
Features
DDR2 VLP Registered DIMM (RDIMM)
MT18HVF12872(P) – 1GB
For the latest data sheet and for component data sheets, refer to Micron's Web site: www.micron.com/products/ddr2
Features
• Supports 95°C with double refresh
• Fits with the ATCA form factor
• 240-pin, registered dual in-line memory module
• Fast data transfer rates: PC2-3200, PC2-4200, or PC2-5300
• Supports ECC error detection and correction
• VDD = VDDQ = +1.8V
• VDDSPD = +1.7V to +3.6V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4-bit prefetch architecture
• DLL to align DQ and DQS transitions with CK
• Single rank
• Multiple internal device banks for concurrent
operation
• Programmable CAS# latency (CL)
• Posted CAS# additive latency (AL)
• WRITE latency = READ latency - 1 tCK
• Programmable burst lengths: 4 or 8
• Adjustable data-output drive strength
• 64ms, 8,192-cycle refresh
• On-die termination (ODT)
• Serial presence-detect (SPD) with EEPROM
• Gold edge contacts
Table 1: Addressing
Refresh count
Row address
Device bank address
Device page size per bank
Device configuration
Column address
Module rank address
Figure 1:
240-Pin VLP DIMM (MO-237)
Functionally equivelent to R/C “U” and “V”
Height: 17.9mm (0.705in)
Options
Marking
• Parity
• Package
240-pin DIMM (lead-free)
• Frequency/CAS latency1
3.0ns @ CL = 5 (DDR2-667)2
3.75ns @ CL = 4 (DDR2-533)
5.0ns @ CL = 3 (DDR2-400)
• PCB height
17.9mm (1.18in)
P
Y
-667
-53E
-40E
Notes: 1. CL = CAS (READ) latency; registered mode
will add one clock cycle to CL.
2. Contact Micron for product availability.
1GB
8K
16K (A0–A13)
4 (BA0, BA1)
1KB
512Mb (128 Meg x 4)
2K (A0–A9, A11)
1 (S0#)
Table 2: Key Timing Parameters
Speed Grade
-667
-53E
-40E
Industry Nomenclature
PC2-5300
PC2-4200
PC2-3200
Data Rate (MT/s)
CL = 5
667
CL = 4
533
533
400
CL = 3
400
400
tRCD
(ns)
15
15
15
tRP
(ns)
15
15
15
tRC
(ns)
55
55
55
PDF: 09005aef82255aba/Source: 09005aef82255a83
HVF18C64_128_256x72G.fm - Rev. B 5/06 EN
1 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.



Micron
Micron

MT18HVF12872 Datasheet Preview

MT18HVF12872 Datasheet

1GB DDR2 VLP Registered DIMM

No Preview Available !

MT18HVF12872 pdf
1GB (x72, ECC, SR) 240-Pin DDR2 VLP RDIMM
Features
Figure 2: Module Part Numbers
Example Part Number: MT 1 8 HVF1 2 8 7 2 P Y-6 6 7 __
-
MT 18 H VF
128
72 P Y
667
:
Micron Technology
Number of DRAM
Process Technology
H 1.8V (DDR2 SDRAM)
Product Family
TF DDR2 FBGA
TS DDR2 DDP (Dual die in package)
TD DDR2 flip chip
TJ DDR2 CSP stack
VF DDR2 VLP
Depth
Width
PCB Die Revision
DRAM Die Revision
Module Speed
Package Code (lead-free)
Y Single- or dual-rank DIMM
DY Select dual-rank DIMM
Module Version
Blank 184-pin/240-pin registered DIMM
P 184-pin/240-pin registered DIMM w/Parity
Table 3:
Part Numbers and Timing (1GB – 128 Meg x 72)
Uses 512Mb (128 Meg x 4) – MT47H128M4 DDR2 SDRAM – www.micron.com/products/ddr2
Part Number
Industry
Module
Nomenclature Bandwidth
MT18HVF12872(P)Y-667__
MT18HVF12872(P)Y-53E__
MT18HVF12872(P)Y-40E__
PC2-5300
PC2-4200
PC2-3200
5.3 GB/s
4.2 GB/s
3.2 GB/s
Clock Cycle
Time (ns)
3.0
3.75
5.0
Data Rate
(MT/s)
667
533
400
Latency
DRAM
(CL - tRCD - tRP) Speed Grade
5-5-5
4-4-4
3-3-3
-3
-37E
-5E
Notes: 1. All part numbers end with a two-place code (not shown), designating component and PCB
revisions. Consult factory for current revision codes. Example: MT18HVF12872PY-667C2.
PDF: 09005aef82255aba/Source: 09005aef82255a83
HVF18C64_128_256x72G.fm - Rev. B 5/06 EN
2 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.


Part Number MT18HVF12872
Description 1GB DDR2 VLP Registered DIMM
Maker Micron
Total Page 15 Pages
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