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Micron

MT29F128G08CFAAA Datasheet Preview

MT29F128G08CFAAA Datasheet

NAND Flash Memory

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MT29F128G08CFAAA pdf
Micron Confidential and Proprietary
64Gb, 128Gb, 256Gb, 512Gb Asynchronous/Synchronous NAND
Features
NAND Flash Memory
MT29F64G08CBAA[A/B], MT29F128G08C[E/F]AAA, MT29F128G08CFAAB,
MT29F256G08C[J/K/M]AAA, MT29F256G08CJAAB, MT29F512G08CUAAA,
MT29F64G08CBCAB, MT29F128G08CECAB, MT29F256G08C[K/M]CAB,
MT29F512G08CUCAB
Features
Open NAND Flash Interface (ONFI) 2.2-compliant1
Multiple-level cell (MLC) technology
Organization
Page size x8: 8640 bytes (8192 + 448 bytes)
Block size: 256 pages (2048K + 112K bytes)
Plane size: 2 planes x 2048 blocks per plane
Device size: 64Gb: 4096 blocks;
128Gb: 8192 blocks;
256Gb: 16,384 blocks;
512Gb: 32,786 blocks
Synchronous I/O performance
Up to synchronous timing mode 52
Clock rate: 10ns (DDR)
Read/write throughput per pin: 200 MT/s
Asynchronous I/O performance
Up to asynchronous timing mode 5
tRC/tWC: 20ns (MIN)
Up to asynchronous timing mode 5
Read/write throughput per pin: 50 MT/s
Array performance
Read page: 75µs (MAX)
Program page: 1300µs (TYP)
Erase block: 3.8ms (TYP)
Operating Voltage Range
VCC: 2.7–3.6V
VCCQ: 1.7–1.95V, 2.7–3.6V
Command set: ONFI NAND Flash Protocol
Advanced Command Set
Program cache
Read cache sequential
Read cache random
One-time programmable (OTP) mode
Multi-plane commands
Multi-LUN operations
Read unique ID
Copyback
First block (block address 00h) is valid when ship-
ped from factory. For minimum required ECC, see
Error Management (page 109).
RESET (FFh) required as first command after power-
on
Operation status byte provides software method for
detecting
Operation completion
Pass/fail condition
Write-protect status
Data strobe (DQS) signals provide a hardware meth-
od for synchronizing data DQ in the synchronous
interface
Copyback operations supported within the plane
from which data is read
Quality and reliability
Data retention: JESD47G compliant; see qualifica-
tion report
Endurance: 3000 PROGRAM/ERASE cycles
Operating temperature:
Commercial: 0°C to +70°C
Industrial (IT): –40ºC to +85ºC
Package
52-pad LGA
48-pin TSOP
100-ball BGA
Notes:
1. The ONFI 2.2 specification is available at
www.onfi.org.
2. BGA devices up to Synchronous timing
mode 5. TSOP devices up to Synchronous tim-
ing mode 4.
PDF: 09005aef83d2277a
Rev. E 3/11 EN
1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.



Micron
Micron

MT29F128G08CFAAA Datasheet Preview

MT29F128G08CFAAA Datasheet

NAND Flash Memory

No Preview Available !

MT29F128G08CFAAA pdf
Micron Confidential and Proprietary
64Gb, 128Gb, 256Gb, 512Gb Asynchronous/Synchronous NAND
Features
Part Numbering Information
Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by
using Micron’s part catalog search at www.micron.com. To compare features and specifications by device type,
visit www.micron.com/products. Contact the factory for devices not found.
Figure 1: Part Numbering
MT 29F 64G 08 C B A A A WP
Micron Technology
NAND Flash
29F = NAND Flash memory
Density
64G = 64Gb
128G = 128Gb
256G = 256Gb
512G = 512Gb
Device Width
08 = 8 bits
Level
Bit/Cell
C 2-bit
Classification
Die # of CE# # of R/B# I/O
B1
1
1 Common
E2
2
2 Separate
F2
2
2 Common
J4
2
2 Common
K4
2
2 Separate
M4
4
4 Separate
U8
4
4 Separate
Operating Voltage Range
A = VCC: 3.3V (2.7–3.6V), VCCQ: 3.3V (2.7–3.6V)
C = VCC: 3.3V (2.7–3.6V), VCCQ: 1.8V (1.7–1.95V)
Note: 1. Pb-free package.
ES :A
Design Revision
A = First revision
Production Status
Blank = Production
ES = Engineering sample
Reserved for Future Use
Blank
Operating Temperature Range
Blank = Commercial (0°C to +70°C)
IT = Industrial (–40°C to +85°C)
Speed Grade (synchronous mode only)
-12 = 166 MT/s
-10 = 200 MT/s
Package Code
C5 = 52-pad VLGA 14mm x 18mm x 1.0mm1
H1 = 100-ball VBGA 12mm x 18mm x 1.0mm1
H2 = 100-ball TBGA 12mm x 18mm x 1.2mm1
H3 = 100-ball LBGA 12mm x 18mm x 1.4mm1
WP = 48-pin TSOP1 (CPL)
Interface
A = Async only
B = Sync/Async
Generation Feature Set
A = First set of device features
PDF: 09005aef83d2277a
Rev. E 3/11 EN
2 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.


Part Number MT29F128G08CFAAA
Description NAND Flash Memory
Maker Micron
Total Page 30 Pages
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