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MT29F4G08ABBEAH4 Datasheet Preview

MT29F4G08ABBEAH4 Datasheet

NAND Flash Memory

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MT29F4G08ABBEAH4 pdf
Micron Confidential and Proprietary
4Gb: x8, x16 NAND Flash Memory
Features
NAND Flash Memory
MT29F4G08ABBEAH4, MT29F4G16ABBEAH4, MT29F4G16ABAEAH4
MT29F4G08ABAEAWP, MT29F4G16ABAEAWP, MT29F4G08ABAEAH4
Features
• Open NAND Flash Interface (ONFI) 1.0-compliant1
• Single-level cell (SLC) technology
• Organization
– Page size x8: 4320 bytes (4096 + 224 bytes)
– Page size x16: 2160 words (2048 + 112 words)
– Block size: 64 pages (256K + 14K bytes)
– Plane size: 2 planes x 1024 blocks per plane
– Device size: 4Gb: 2048 blocks
• Asynchronous I/O performance
tRC/tWC: 20ns (3.3V), 30ns (1.8V)
• Array performance
– Read page: 25µs
– Program page: 200µs (TYP)
– Erase block: 2ms (TYP)
• Command set: ONFI NAND Flash Protocol
• Advanced command set
– Program page cache mode
– Read page cache mode
– One-time programmable (OTP) mode
– Block lock (1.8V only)
– Programmable drive strength
– Two-plane commands
– Multi-die (LUN) operations
– Read unique ID
– Internal data move
• Operation status byte provides software method for
detecting
– Operation completion
– Pass/fail condition
– Write-protect status
• Ready/Busy# (R/B#) signal provides a hardware
method of detecting operation completion
• WP# signal: Write protect entire device
• First block (block address 00h) is valid when ship-
ped from factory with ECC. For minimum required
ECC, see Error Management.
• RESET (FFh) required as first command after pow-
er-on
• Alternate method of device initialization after pow-
er up (contact factory)
• Internal data move operations supported within the
plane from which data is read
• Quality and reliability
– Data retention: JESD47G-compliant; see qualifi-
cation report
– Endurance: See Qualification Report
• Operating voltage range
– VCC: 2.7–3.6V
– VCC: 1.7–1.95V
• Operating temperature:
– Commercial: 0°C to +70°C
– Industrial (IT): –40ºC to +85ºC
• Package
– 48-pin TSOP type 1, CPL2
– 63-ball VFBGA
Notes: 1. The ONFI 1.0 specification is available at
www.onfi.org.
2. CPL = Center parting line.
PDF: 09005aef840a5fc9
m70m_4gb_nand.pdf – Rev. L 2/12 EN
1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
Free Datasheet http://www.Datasheet4U.com



Micron
Micron

MT29F4G08ABBEAH4 Datasheet Preview

MT29F4G08ABBEAH4 Datasheet

NAND Flash Memory

No Preview Available !

MT29F4G08ABBEAH4 pdf
Micron Confidential and Proprietary
4Gb: x8, x16 NAND Flash Memory
Features
Part Numbering Information
Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by
using Micron’s part catalog search at www.micron.com. To compare features and specifications by device type,
visit www.micron.com/products. Contact the factory for devices not found.
Figure 1: Marketing Part Number Chart
MT 29F 4G 08 A B A E A WP xx xx x ES :E
Micron Technology
Product Family
29F = NAND Flash memory
Density
4G = 4Gb
Device Width
08 = 8-bit
16 = 16-bit
Level
A = SLC
Classification
Mark Die nCE RnB I/O Channels
B1
11
1
Operating Voltage Range
A = 3.3V (2.7–3.6V)
B = 1.8V (1.7–1.95V)
Feature Set
E = Feature set E
Design Revision (shrink)
Production Status
Blank = Production
ES = Engineering sample
MS = Mechanical sample
QS = Qualification sample
Reserved for Future Use
Blank
Operating Temperature Range
Blank = Commercial (0°C to +70°C)
IT = Industrial (–40°C to +85°C)
Speed Grade
Blank
Package Code
H4 = 63-ball VFBGA (9 x 11 x 1.0mm)
WP = 48-pin TSOP CPL Type 1
Interface
A = Async only
PDF: 09005aef840a5fc9
m70m_4gb_nand.pdf – Rev. L 2/12 EN
2 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.
Free Datasheet http://www.Datasheet4U.com


Part Number MT29F4G08ABBEAH4
Description NAND Flash Memory
Maker Micron
Total Page 30 Pages
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