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MT29F64G08CFAAA Datasheet Preview

MT29F64G08CFAAA Datasheet

NAND Flash Memory

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MT29F64G08CFAAA pdf
Micron Confidential and Proprietary
Advance
32Gb, 64Gb, 128Gb: NAND Flash
Features
NAND Flash Memory
MT29F32G08MAA ES, MT29F32G08CBAAA, MT29F64G08CFAAA,
MT29F64G08CEAAA, MT29F128G08TAA ES, MT29F128G08CJAAA,
MT29F128G08CKAAA
Features
• Open NAND Flash Interface (ONFI) 2.0-compliant
• Multilevel cell (MLC) technology
• Organization
Page size: x8: 4314 bytes (4096 + 218 bytes)
Block size: 128 pages (512K + 27K bytes)
Plane size: 4096 blocks
Device size: 32Gb, 8192 blocks; 64Gb, 16,384
blocks; 128Gb, 32,768 blocks
• READ performance
Random read: 50µs
Sequential read: 20ns
• PROGRAM performance
Page program: 900µs (TYP)
Block erase: 3ms (TYP)
• Endurance: 10,000 PROGRAM/ERASE cycles1
• First block (block address 00h) guaranteed to be
valid with ECC when shipped from factory1
• Industry-standard basic NAND Flash command set
• Advanced command set
PROGRAM PAGE CACHE MODE
PAGE READ CACHE MODE
Two-plane commands
Interleaved die operations
READ UNIQUE ID
• Operation status byte provides a software method of
detecting:
Operation completion
Pass/fail condition
Write-protect status
• Ready/busy# (R/B#) signal provides a hardware
method of detecting PROGRAM and ERASE cycle
completion
• WP# signal: entire-device hardware write protect
• RESET required as first command after power-up
• INTERNAL DATA MOVE operations supported
within the plane from which data is read
Figure 1: 48-Pin TSOP Type 1
Options
• Density2: 32Gb, 64Gb, 128Gb
• Device width: x8
• Configuration:
# of die # of CE# # of R/B# I/O
TSOP
11
1 Common
TSOP
22
2 Common
TSOP
42
2 Common
LGA
22
2 Separate
LGA
42
2 Separate
• Vcc: 2.7V–3.6 V
• Package: 48-pin TSOP type I (lead-free plating),
52-pad LGA
• Operating temperature:
– Commercial temperature (0°C to +70°C)
– Extended temperature (–40°C to +85°C)
Notes: 1. For details, see “Error Management” on
page 89.
2. For part numbering and markings, see
Figure 2 on page 2.
PDF: 09005aef8331b189 / Source: 09005aef8331b1c4
32gb_nand_mlc_l63a__1.fm - Rev. A 12/08 EN
1 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2008 Micron Technology, Inc. All rights reserved.
‡Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by
Micron without notice. Products are only warranted by Micron to meet Micron’s production data sheet specifications.



Micron
Micron

MT29F64G08CFAAA Datasheet Preview

MT29F64G08CFAAA Datasheet

NAND Flash Memory

No Preview Available !

MT29F64G08CFAAA pdf
Micron Confidential and Proprietary
Advance
32Gb, 64Gb, 128Gb: NAND Flash
Part Numbering Information
Part Numbering Information
Micron NAND Flash devices are available in different configurations and densities (see
Figure 2).
Figure 2: Part Number Chart for 32Gb, 64Gb TSOP Engineering Samples
Micron Technology
MT 29F 32G 08 M A A WC
Product Family
29F = Single-supply NAND Flash memory
Density
32G = 32Gb
64G = 64Gb
Device Width
08 = 8 bits
Classification
# of die # of CE# # of R/B#
M1 1 1
T4 2 2
I/O
Common
Common
Operating Voltage Range
A = 3.3V (2.7–3.6V)
Feature Set
A = Feature set A
ES :A
Design Revision
A = First revision
Production Status
ES = Engineering sample
Operating Temperature Range
Blank = Commercial (0°C to +70°C)
ET = Extended (–40°C to +85°C)
Reserved for Future Use
Blank
NAND Flash Performance
Blank = Standard
Package Code
WC = 48-pin TSOP I (lead-free)
PDF: 09005aef8331b189 / Source: 09005aef8331b1c4
32gb_nand_mlc_l63a__1.fm - Rev. A 12/08 EN
2 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2008 Micron Technology, Inc. All rights reserved.


Part Number MT29F64G08CFAAA
Description NAND Flash Memory
Maker Micron
Total Page 30 Pages
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