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Micron Technology
Micron Technology

MT28F800B3 Datasheet Preview

MT28F800B3 Datasheet

(MT28F008B3 / MT28F800B3) FLASH MEMORY

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MT28F800B3 pdf
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FLASH MEMORY
8Mb
SMART 3 BOOT BLOCK FLASH MEMORY
MT28F008B3
MT28F800B3
3V Only, Dual Supply (Smart 3)
FEATURES
• Eleven erase blocks:
16KB/8K-word boot block (protected)
40-Pin TSOP Type I 48-Pin TSOP Type I
Two 8KB/4K-word parameter blocks
Eight main memory blocks
• Smart 3 technology (B3):
3.3V ±0.3V VCC
3.3V ±0.3V VPP application programming
5V ±10% VPP application/production programming1
• Compatible with 0.3µm Smart 3 device
• Advanced 0.18µm CMOS floating-gate process
• Address access time: 90ns
• 100,000 ERASE cycles
• Industry-standard pinouts
• Inputs and outputs are fully TTL-compatible
44-Pin SOP
• Automated write and erase algorithm
• Two-cycle WRITE/ERASE sequence
• TSOP, SOP and FBGA packaging options
DataSheet4U.com
• Byte- or word-wide READ and WRITE
(MT28F800B3):
1 Meg x 8/512K x 16
DataShee
OPTIONS
• Timing
90ns access
• Configurations
1 Meg x 8
512K x 16/1 Meg x 8
• Boot Block Starting Word Address
Top (7FFFFh)
Bottom (00000h)
• Operating Temperature Range
Commercial (0ºC to +70ºC)
Extended (-40ºC to +85ºC)
• Packages
40-pin TSOP Type I (MT28F008B3)
48-pin TSOP Type I (MT28F800B3)
44-pin SOP (MT28F800B3)
MARKING
-9
MT28F008B3
MT28F800B3
T
B
None
ET
VG
WG
SG
NOTE:
1. This generation of devices does not support 12V VPP
production programming; however, 5V VPP application
production programming can be used with no loss of
performance.
Part Number Example:
MT28F800B3WG-9 BET
DataSheet4U.com
GENERAL DESCRIPTION
The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are
low-voltage, nonvolatile, electrically block-erasable (flash),
programmable memory devices containing 8,388,608 bits
organized as 524,288 words (16 bits) or 1,048,576 bytes (8
bits). Writing and erasing the device is done with a VPP
voltage of either 3.3V or 5V, while all operations are
performed with a 3.3V VCC. Due to process technology
advances, 5V VPP is optimal for application and production
programming. These devices are fabricated with Micron’s
advanced 0.18µm CMOS floating-gate process.
The MT28F008B3 and MT28F800B3 are organized
into eleven separately erasable blocks. To ensure that
critical firmware is protected from accidental erasure or
overwrite, the devices feature a hardware-protected
boot block. This block may be used to store code imple-
mented in low-level system recovery. The remaining
blocks vary in density and are written and erased with
no additional security measures.
Refer to Micron’s Web site (www.micron.com/flash)
for the latest data sheet.
8Mb Smart 3 Boot Block Flash Memory
Q10_3.p65 – Rev. 3, Pub. 10/01
1
©2001, Micron Technology, Inc.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
DataSheet4 U .com



Micron Technology
Micron Technology

MT28F800B3 Datasheet Preview

MT28F800B3 Datasheet

(MT28F008B3 / MT28F800B3) FLASH MEMORY

No Preview Available !

MT28F800B3 pdf
www.DataSheet4U.com
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8Mb
SMART 3 BOOT BLOCK FLASH MEMORY
PIN ASSIGNMENT (Top View)
48-Pin TSOP Type I
44-Pin SOP
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE#
RP#
VPP
WP#
NC
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48 A16
47 BYTE#
46 VSS
45 DQ15/(A - 1)
44 DQ7
43 DQ14
42 DQ6
41 DQ13
40 DQ5
39 DQ12
38 DQ4
37 VCC
36 DQ11
35 DQ3
34 DQ10
33 DQ2
32 DQ9
31 DQ1
30 DQ8
29 DQ0
28 OE#
27 VSS
26 CE#
25 A0
ORDER NUMBER AND PART MARKING
MT28F800B3WG-9 B
MT28F800B3WG-9 T
MT28F800B3WG-9 BET
MT28F800B3WG-9 TET
DataSheet4U.com
VPP
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE#
VSS
OE#
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44 RP#
43 WE#
42 A8
41 A9
40 A10
39 A11
38 A12
37 A13
36 A14
35 A15
34 A16
33 BYTE#
32 VSS
31 DQ15/(A - 1)
30 DQ7
29 DQ14
28 DQ6
27 DQ13
26 DQ5
25 DQ12
24 DQ4
23 VCC
ORDER NUMBER AND PART MARKING
MT28F800B3SG-9 B
MT28F800B3SG-9 T
MT28F800B3SG-9 BET
MT28F800B3SG-9 TET
DataShee
DataSheet4U.com
8Mb Smart 3 Boot Block Flash Memory
Q10_3.p65 – Rev. 3, Pub. 10/01
DataSheet4 U .com
A16
A15
A14
A13
A12
A11
A9
A8
WE#
RP#
VPP
WP#
A18
A7
A6
A5
A4
A3
A2
A1
40-Pin TSOP Type I
1 40
2 39
3 38
4 37
5 36
6 35
7 34
8 33
9 32
10 31
11 30
12 29
13 28
14 27
15 26
16 25
17 24
18 23
19 22
20 21
A17
VSS
NC
A19
A10
DQ7
DQ6
DQ5
DQ4
VCC
VCC
NC
DQ3
DQ2
DQ1
DQ0
OE#
VSS
CE#
A0
ORDER NUMBER AND PART MARKING
MT28F008B3VG-9 B
MT28F008B3VG-9 T
MT28F008B3VG-9 BET
MT28F008B3VG-9 TET
2 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.


Part Number MT28F800B3
Description (MT28F008B3 / MT28F800B3) FLASH MEMORY
Maker Micron Technology
Total Page 30 Pages
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