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MT29F8G08FABWP Datasheet Preview

MT29F8G08FABWP Datasheet

(MT29FxGxxBxBWP) 8Gb x8/x16 Multiplexed NAND Flash Memory

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MT29F8G08FABWP pdf
2, 4, and 8Gb x8/x16 Multiplexed NAND Flash Memory
Features
NAND Flash Memory
MT29F2G08AABWP/MT29F2G16AABWP
MT29F4G08BABWP/MT29F4G16BABWP
MT29F8G08FABWP
Features
• Organization:
• Page size:
x8: 2,112 bytes (2,048 + 64 bytes)
x16: 1,056 words (1,024 + 32 words)
• Block size: 64 pages (128K + 4K bytes)
www.DataShDeetv4iUc.ecosmize: 2Gb: 2,048 blocks; 4Gb: 4,096 blocks;
8Gb: 8,192 blocks
• Read performance:
• Random read: 25µs
• Sequential read: 30ns (3V x8 only)
• Write performance:
• Page program: 300µs (TYP)
• Block erase: 2ms (TYP)
• Endurance: 100,000 PROGRAM/ERASE cycles
• Data retention: 10 years
• First block (block address 00h) guaranteed to be
valid without ECC (up to 1,000 PROGRAM/ERASE
cycles)
• VCC: 2.7V–3.6V
• Automated PROGRAM and ERASE
• Basic NAND command set:
• PAGE READ, RANDOM DATA READ, READ ID,
READ STATUS, PROGRAM PAGE, RANDOM DATA
INPUT, PROGRAM PAGE CACHE MODE, INTER-
NAL DATA MOVE, INTERNAL DATA MOVE with
RANDOM DATA INPUT, BLOCK ERASE, RESET
• New commands:
• PAGE READ CACHE MODE
• READ UNIQUE ID (contact factory)
• READ ID2 (contact factory)
• Operation status byte provides a software method of
detecting:
• PROGRAM/ERASE operation completion
• PROGRAM/ERASE pass/fail condition
• Write-protect status
• Ready/busy# (R/B#) pin provides a hardware
method of detecting PROGRAM or ERASE cycle
completion
• PRE pin: prefetch on power up
• WP# pin: hardware write protect
Figure 1: 48-PIN TSOP Type 1
Options
Marking
• Density:
2Gb (single die)
MT29F2GxxAAB
4Gb (dual-die stack)
MT29F4GxxBAB
8Gb (quad-die stack)
MT29F8GxxFAB
• Device width:
x8 MT29Fxx08x
x16 MT29Fxx16x
• Configuration: # of die # of CE# # of R/B#
11
1
A
21
1
B
42
2
F
• VCC: 2.7V–3.6V
A
• Second generation die
B
• Package:
48 TSOP type I (lead-free plating)
WP
48 TSOP type I (contact factory)
WG
• Operating temperature:
Commercial (0–70°C)
Extended temperature
ET
(-40°C to +85°C)
09005aef818a56a7 pdf/ 09005aef81590bdd source
2gb_nand_m29b__1.fm - Rev. H 9/05 EN
1 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2004 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.



Micron Technology
Micron Technology

MT29F8G08FABWP Datasheet Preview

MT29F8G08FABWP Datasheet

(MT29FxGxxBxBWP) 8Gb x8/x16 Multiplexed NAND Flash Memory

No Preview Available !

MT29F8G08FABWP pdf
2, 4, and 8Gb x8/x16 Multiplexed NAND Flash Memory
Part Numbering Information
Part Numbering Information
Micron NAND Flash devices are available in several different configurations and densi-
ties. (See Figure 2.)
Figure 2: Part Number Chart
MT 29F 2G 08 A A B WP
ES
www.DataSheet4U.com
Micron Technology
Product Family
29F = Single-Supply NAND Flash Memory
Density
2G = 2Gb
4G = 4Gb
8G = 8Gb
Device Width
08 = 8 bits
16 = 16 bits
Classification
# of die # of CE# # of R/B# I/O
A 1 1 1 Common
B 2 1 1 Common
F 4 2 2 Common
Operating Voltage Range
A = 3.3V (2.70V–3.60V)
Production Status
Blank = Production
ES = Engineering Sample
MS = Mechanical Sample
Operating Temperature Range
Blank = Commercial (0°C to +70°C)
ET = Extended (–40° to +85°C)
Reserved for Future Use
Reserved for Future Use
Package Codes
WP = 48-pin TSOP I (Lead-free)
WG = 48-pin TSOP I (contact factory)
Generation
A = 1st Generation Die
B = 2nd Generation Die
C = 3rd Generation Die
Valid Part Number Combinations
After building the part number from the part numbering chart above, verify that the part
number is valid using the Micron Part Marking Decoder Web site at
http://www.micron.com/partsearch to verify that the part number is offered and valid.
If the device required is not on this list, contact the factory.
09005aef818a56a7 pdf/ 09005aef81590bdd source
2gb_nand_m29b__1.fm - Rev. H 9/05 EN
2 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2004 Micron Technology, Inc. All rights reserved.


Part Number MT29F8G08FABWP
Description (MT29FxGxxBxBWP) 8Gb x8/x16 Multiplexed NAND Flash Memory
Maker Micron Technology
Total Page 30 Pages
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