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  Microsemi Electronic Components Datasheet  

APT15GN120SDQ1G Datasheet

High Speed PT IGBT

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APT15GN120SDQ1G pdf
TYPICAL PERFORMANCE CURVES
APT15GN120BDQ1
APT15GN120BDQ1(G)
APAT1P5TG1N51G20NB1D2_0SSDDQQ1(G1 )
APT15GN120SDQ1(G)
w w w . D a t a1S h2e0e0tV4 U . c o m
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and a
slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive
design and minimizes losses.
1200V Field Stop
• Trench Gate: Low VCE(on)
• Easy Paralleling
(B)
TO-247
G
C
E
D3PAK
(S)
C
GE
C
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
G
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
APT15GN120BD_SDQ1(G) UNIT
VCES
VGE
I C1
I C2
I CM
SSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
1200
±30
45
22
45
45A @ 1200V
195
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
V(BR)CES
VGE(TH)
VCE(ON)
I CES
I GES
RGINT
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA)
Gate Threshold Voltage (VCE = VGE, I C = 600µA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 125°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
Intergrated Gate Resistor
1200
5.0 5.8 6.5
1.4 1.7 2.1
2.0
200
TBD
120
N/A
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Units
Volts
µA
nA
Ω
Microsemi Website - http://www.microsemi.com


  Microsemi Electronic Components Datasheet  

APT15GN120SDQ1G Datasheet

High Speed PT IGBT

No Preview Available !

APT15GN120SDQ1G pdf
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Cies
Coes
Cres
VGEP
Qg
Qge
Qgc
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
SSOA
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4 4
Turn-on Switching Energy (Diode) 55
Turn-off Switching Energy 66
Test Conditions
Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCE = 600V
IC = 15A
TJ = 150°C, RG = 4.3Ω 7, VGE =
15V, L = 100µH,VCE = 1200V
Inductive Switching (25°C)
VCC = 800V
VGE = 15V
IC = 15A
RG = 4.3Ω 7
TJ = +25°C
Inductive Switching (125°C)
VCC = 800V
VGE = 15V
IC = 15A
RG = 4.3Ω 7
TJ = +125°C
APT15GN120BD_SDQ1(G)
MIN
TYP MAX UNIT
www.DataSheet4U.com
1200
65 pF
50
9.0 V
90
5 nC
55
45
10
9
150
110
410
730
950
10
9
170
185
475
1310
1300
A
ns
µJ
ns
µJ
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic
RθJC
RθJC
WT
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
MIN TYP MAX UNIT
.64
1.18
°C/W
5.9 gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 RG is external gate resistance, not including RGint nor gate driver impedance. (MIC4452)
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.


Part Number APT15GN120SDQ1G
Description High Speed PT IGBT
Maker Microsemi
Total Page 9 Pages
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