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  Microsemi Electronic Components Datasheet  

APT50GS60SRDQ2G Datasheet

High Speed NPT IGBT

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APT50GS60SRDQ2G pdf
APT50GS60BRDQ2(G)
APT50GS60SRDQ2(G)
600V, 50A, VCE(ON) = 2.8V Typical
Thunderbolt® High Speed NPT IGBT with Anti-Parallel 'DQ' Diode
The Thunderbolt HSseries is based on thin wafer non-punch through (NPT) technology similar to
the Thunderbolt® series, but trades higher VCE(ON) for signicantly lower turn-on energy Eoff. The low
switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET
performance but lower cost.
An extremely tight parameter distribution combined with a positive VCE(ON) temperature coefcient
make it easy to parallel Thunderbolts HSIGBT's. Controlled slew rates result in very good noise
TO-247
D3PAK
and oscillation immunity and low EMI. The short circuit duration rating of 10μs make these IGBT's
suitable for motor drive and inverter applications. Reliability is further enhanced by avalanche energy
ruggedness. Combi versions are packaged with a high speed, soft recovery DQ series diode.
Features
Typical Applications
APT50GS60BRDQ2(G)
APT50GS60SRDQ2(G)
• Fast Switching with low EMI
• Very Low EOFF for Maximum Efciency
• Short circuit rated
• Low Gate Charge
• ZVS Phase Shifted and other Full Bridge
• Half Bridge
• High Power PFC Boost
• Welding
Single die
IGBT with
separate DQ
diode die
• Tight parameter distribution
• Induction heating
• Easy paralleling
• High Frequency SMPS
• RoHS Compliant
Absolute Maximum Ratings
Symbol Parameter
Rating
IC1 Continuous Collector Current TC = @ 25°C
IC1 Continuous Collector Current TC = @ 100°C
ICM Pulsed Collector Current 1
VGE Gate-Emitter Voltage
93
50
195
±30V
SSOA Switching Safe Operating Area
195
EAS Single Pulse Avalanche Energy
20
tSC Short Circut Withstand Time 3
10
IF Diode Continuous Forward Current
TC = 25°C
TC = 100°C
90
55
IFRM Diode Max. Repetitive Forward Current
195
Thermal and Mechanical Characteristics
Symbol Parameter
Min Typ Max
PD Total Power Dissipation TC = @ 25°C
415
RθJC Junction to Case Thermal Resistance
IGBT
Diode
0.30
0.67
RθCS Case to Sink Thermal Resistance, Flat Greased Surface
0.11
TJ, TSTG Operating and Storage Junction Temperature Range
-55 150
TL Soldering Temperature for 10 Seconds (1.6mm from case)
300
WT Package Weight
0.22
5.9
Torque Mounting Torque (TO-247), 6-32 M3 Screw
10
1.1
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should be Followed.
Unit
A
V
mJ
μs
A
Unit
W
°C/W
°C
oz
g
in·lbf
N·m
Microsemi Website - http://www.microsemi.com


  Microsemi Electronic Components Datasheet  

APT50GS60SRDQ2G Datasheet

High Speed NPT IGBT

No Preview Available !

APT50GS60SRDQ2G pdf
Static Characteristics
TJ = 25°C unless otherwise specied
Symbol Parameter
Test Conditions
VBR(CES) Collector-Emitter Breakdown Voltage
VGE = 0V, IC = 2.0mA
VBR(CES)/TJ Breakdown Voltage Temperature Coeff
VCE(ON) Collector-Emitter On Voltage 3
VEC Diode Forward Voltage 3
VGE(th)
Gate-Emitter Threshold Voltage
VGE(th)/TJ Threshold Voltage Temp Coeff
ICES Zero Gate Voltage Collector Current
IGES
Gate-Emitter Leakage Current
Reference to 25°C, IC = 2.0mA
VGE = 15V
IC = 50A
TJ = 25°C
TJ = 125°C
IC = 50A
TJ = 25°C
TJ = 125°C
VGE = VCE, IC = 1mA
VCE = 600V,
VGE = 0V
TJ = 25°C
TJ = 125°C
VGE = ±20V
APT50GS60B_SRDQ2(G)
Min Typ Max Unit
600 V
0.60 V/°C
2.8 3.15
3.25
2.15 V
1.8
345
6.7 mV/°C
50
1000
μA
±100
nA
Dynamic Characteristics
TJ = 25°C unless otherwise specied
Symbol Parameter
Test Conditions
gfs
Cies
Coes
Cres
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 50V, IC = 50A
VGE = 0V, VCE = 25V
f = 1MHz
Co(cr)
Co(er)
Reverse Transfer Capacitance
Charge Related 4
Reverse Transfer Capacitance
Current Related 5
VGE = 0V
VCE = 0 to 400V
Qg
Qge
Ggc
td(on)
tr
td(off)
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
VGE = 0 to 15V
IC = 50A, VCE = 300V
Inductive Switching IGBT and
Diode:
tf
Eon1
Eon2
Eoff
td(on)
tr
td(off)
Fall Time
Turn-On Switching Energy 7
Turn-On Switching Energy 8
Turn-Off Switching Energy 9
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
TJ = 25°C, VCC = 400V,
RG = 4.7ICΩ=6,5V0GAG = 15V
Inductive Switching IGBT and
Diode:
tf
Eon1
Eon2
Eoff
trr
Qrr
Irrm
Fall Time
Turn-On Switching Energy 7
Turn-On Switching Energy 8
Turn-Off Switching Energy 9
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Peak Reverse Recovery Current
TJ = 125°C, VCC = 400V,
RG
=
IC
4.7Ω
= 50A
6, VGG
=
15V
IF = 50A
VR = 400V
diF/dt = 200A/μs
Min Typ Max
31
2635
240
145
115
85
235
18
100
16
33
225
37
TBD
1.2
0.755
33
33
250
23
TBD
1.7
0.950
25
35
3
Unit
S
pF
nC
ns
mJ
ns
mJ
ns
nC
A


Part Number APT50GS60SRDQ2G
Description High Speed NPT IGBT
Maker Microsemi
Total Page 9 Pages
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