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  Microsemi Electronic Components Datasheet  

APT100GT120JU2 Datasheet

ISOTOP Boost chopper Trench Field Stop IGBT

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APT100GT120JU2 pdf
ISOTOP® Boost chopper
Trench + Field Stop IGBT®
APT100GT120JU2www.DataSheet4U.com
VCES = 1200V
IC = 100A @ Tc = 80°C
K
C
G
E
E
G
K
C
ISOTOP
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Brake switch
Features
Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
ISOTOP® Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
Low conduction losses
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC1
IC2
Continuous Collector Current
ICM Pulsed Collector Current
VGE Gate – Emitter Voltage
PD Maximum Power Dissipation
IFAV Maximum Average Forward Current
Duty cycle=0.5
IFRMS RMS Forward Current (Square wave, 50% duty)
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
TC = 80°C
Max ratings
1200
140
100
280
±20
480
27
34
Unit
V
A
V
W
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
www microsemi.com
1–7


  Microsemi Electronic Components Datasheet  

APT100GT120JU2 Datasheet

ISOTOP Boost chopper Trench Field Stop IGBT

No Preview Available !

APT100GT120JU2 pdf
APT100GT120JU2www.DataSheet4U.com
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES Zero Gate Voltage Collector Current
VCE(sat) Collector Emitter saturation Voltage
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
Test Conditions
Min Typ Max Unit
VGE = 0V, VCE = 1200V
5 mA
VGE =15V
IC = 100A
Tj = 25°C 1.4 1.7 2.1
Tj = 125°C
2.0
V
VGE = VCE, IC = 4mA 5.0 6.5 V
VGE = ±20V, VCE = 0V
400 nA
Dynamic Characteristics
Symbol Characteristic
Cies
Coes
Cres
Td(on)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Resistive Switching (25°C)
VGE = 15V
VBus = 600V
IC = 100A
RG = 3.9
Inductive Switching (125°C)
VGE = 15V
VBus = 600V
IC = 100A
RG = 3.9
Min Typ Max Unit
7200
400
300
pF
260
30 ns
420
70
290
45
520
ns
90
10 mJ
12
www microsemi.com
2–7


Part Number APT100GT120JU2
Description ISOTOP Boost chopper Trench Field Stop IGBT
Maker Microsemi Corporation
Total Page 7 Pages
PDF Download
APT100GT120JU2 pdf
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