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  Microsemi Electronic Components Datasheet  

APT100GT60JRDL Datasheet

Resonant Mode Combi IGBT

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APT100GT60JRDL pdf
APT10w0wwG.DaTta6Sh0eeJt4RU.cDomL
600V, 100A, VCE(ON) = 2.1V Typical
Resonant Mode Combi IGBT®
The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation
of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thun-
derbolt IGBT® offers superior ruggedness and ultrafast switching speed.
EE
G C SOT-227
Features
Typical Applications
• Low Forward Voltage Drop • Ultra soft recovery diode
• ZVS Phase Shifted Bridge
• Low Tail Current
• RBSOA and SCSOA Rated
• Resonant Mode Switching
• Integrated Gate Resistor • High Frequency Switching to 50KHz
• Phase Shifted Bridge
Low EMI, High Reliability
• Ultra Low Leakage Current
• Welding
• Low forward Diode Voltage (VF)
• RoHS Compliant
• Induction heating
• High Frequency SMPS
ISOTOP®
G
"UL Recognized"
file # E145592
C
E
Maximum Ratings
Symbol Parameter
VCES
VGE
Collector-Emitter Voltage
Gate-Emitter Voltage
IC1 Continuous Collector Current @ TC = 25°C
IC2
ICM
SSOA
PD
Continuous Collector Current @ TC = 100°C
Pulsed Collector Current 1
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
TJ, TSTG Operating and Storage Junction Temperature Range
All Ratings: TC = 25°C unless otherwise specied.
Ratings
Unit
600
Volts
±30
148
80 Amps
300
300A @ 600V
500
Watts
-55 to 150
°C
Static Electrical Characteristics
Symbol Characteristic / Test Conditions
V(BR)CES
VGE(TH)
VCE(ON)
ICES
IGES
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 4mA)
Gate Threshold Voltage (VCE = VGE, IC = 2.0mA, Tj = 25°C)
Collector Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 25°C)
Collector Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±30V)
Min Typ Max Unit
600 -
-
345
Volts
1.7 2.1 2.5
- 2.5 -
- - 75
μA
- - 1500
- - 300 nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com


  Microsemi Electronic Components Datasheet  

APT100GT60JRDL Datasheet

Resonant Mode Combi IGBT

No Preview Available !

APT100GT60JRDL pdf
Dynamic Characteristic
Symbol
Cies
Coes
Cres
VGEP
Qg
Qge
Qgc
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector Charge
SSOA Switching Safe Operating Area
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Turn-On Switching Energy 4
Turn-On Switching Energy 5
Turn-Off Switching Energy 6
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Turn-On Switching Energy 4
Turn-On Switching Energy 5
Turn-Off Switching Energy 6
Thermal and Mechanical Characteristics
Symbol Characteristic / Test Conditions
RθJC Junction to Case (IGBT)
RθJC Junction to Case (DIODE)
WT Package Weight
Torque Terminals and Mounting Screws
Test Conditions
VGE = 0V, VCE = 25V
f = 1MHz
Gate Charge
VGE = 15V
VCE= 300V
IC = 100A
TJ = 150°C, RG = 4.3Ω , VGE = 15V,
L = 100μH, VCE= 600V
Inductive Switching (25°C)
VCC = 400V
VGE = 15V
IC = 100A
RG = 4.3Ω
TJ = +25°C
Inductive Switching (125°C)
VCC = 400V
VGE = 15V
IC = 100A
RG = 4.3Ω
TJ = +125°C
VIsolation RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
APT100GT60JRDL
Min Tywpww.DaMtaaSxheet4UU.cnoimt
- 5150
-
- 475
-
pF
- 295
-
- 8.0
-
V
- 460
-
- 40 - nC
- 210
-
300 A
- 40
- 75
- 320
- 100
- 3250
- 3525
- 3125
- 40
- 75
- 350
- 100
- 3275
- 4650
- 3750
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
μJ
ns
μJ
Min Typ Max Unit
- - 0.25
°C/W
- - 0.34
- 29.2
-
g
- - 10 in·lbf
- - 1.1 N·m
2500
-
- Volts
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages.
3 See MIL-STD-750 Method 3471.
4
zEoan1thise
the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating
IGBT turn-on loss. Tested in inductive switching test circuit shown in gure 21, but with a
diode reverse recovery
Silicon Carbide diode.
current
adding to
5
lEoosns2.
is the
(See
clamped inductive
Figures 21, 22.)
turn-on
energy
that
includes
a
commutating
diode
reverse
recovery
current
in
the
IGBT
turn-on
switching
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 RG is external gate resistance not including gate driver impedance.
Microsemi reserves the right to change, without notice, the specications and information contained herein.


Part Number APT100GT60JRDL
Description Resonant Mode Combi IGBT
Maker Microsemi Corporation
Total Page 9 Pages
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