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APT60GA60JD60 Datasheet

High Speed PT IGBT

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APT60GA60JD60 pdf
APT60GA60JD60
600V
High Speed PT IGBT
EE
POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved
through leading technology silicon design and lifetime control processes. A reduced Eoff -
VCE(ON) tradeoff results in superior efciency compared to other IGBT technologies. Low
gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short
delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the
poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even
G C SOT-227
ISOTOP®
"UL Recognized"
file # E145592
APT60GA60JD60
when switching at high frequency.
Combi (IGBT and Diode)
FEATURES
• Fast switching with low EMI
• Very Low Eoff for maximum efciency
• Ultra low Cres for improved noise immunity
• Low conduction loss
• Low gate charge
• Increased intrinsic gate resistance for low EMI
• RoHS compliant
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Half bridge
• High power PFC boost
• Welding
• UPS, solar, and other inverters
• High frequency, high efciency industrial
Absolute Maximum Ratings
Symbol Parameter
Vces Collector Emitter Voltage
IC1 Continuous Collector Current @ TC = 25°C
IC2 Continuous Collector Current @ TC = 100°C
ICM Pulsed Collector Current 1
VGE Gate-Emitter Voltage 2
www.DataShPeDet4U.coTmotal Power Dissipation @ TC = 25°C
SSOA Switching Safe Operating Area @ TJ = 150°C
TJ, TSTG Operating and Storage Junction Temperature Range
Ratings
600
112
60
178
±30
356
178A @ 600V
-55 to 150
Unit
V
A
V
W
°C
Static Characteristics
TJ = 25°C unless otherwise specied
Symbol Parameter
Test Conditions
Min Typ Max Unit
VBR(CES)
VCE(on)
VGE(th)
ICES
IGES
Collector-Emitter Breakdown Voltage
Collector-Emitter On Voltage
Gate Emitter Threshold Voltage
Zero Gate Voltage Collector Current
Gate-Emitter Leakage Current
VGE = 0V, IC = 1.0mA
VGE = 15V,
TJ = 25°C
IC = 62A
TJ = 125°C
VGE =VCE , IC = 1mA
VCE = 600V,
TJ = 25°C
VGE = 0V
TJ = 125°C
VGS = ±30V
600
3
2.0 2.5 V
1.9
4.5 6
275
3000
μA
±100
nA
Microsemi Website - http://www.microsemi.com


  Microsemi Electronic Components Datasheet  

APT60GA60JD60 Datasheet

High Speed PT IGBT

No Preview Available !

APT60GA60JD60 pdf
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Qg3
Qge
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Emitter Charge
Qgc Gate- Collector Charge
SSOA
td(on)
tr
td(off)
tf
Eon2
E6
off
td(on)
tr
td(off)
tf
Eon2
E6
off
Switching Safe Operating Area
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
TJ = 25°C unless otherwise specied
Test Conditions
Min
Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
Gate Charge
VGE = 15V
VCE= 300V
IC = 62A
TJ = 150°C, RG = 4.7Ω4, VGE = 15V,
L= 100uH, VCE = 600V
Inductive Switching (25°C)
178
VCC = 400V
VGE = 15V
IC = 62A
RG = 4.7Ω4
TJ = +25°C
Inductive Switching (125°C)
VCC = 400V
VGE = 15V
IC = 62A
RG = 4.7Ω4
TJ = +125°C
APT60GA60JD60
Typ
8010
714
74
296
106
Max
60
Unit
pF
nC
35
49
175
91
1450
1255
33
49
214
119
1995
1760
A
ns
μJ
ns
μJ
Thermal and Mechanical Characteristics
Symbol Characteristic
Min Typ Max Unit
RθJC
RθJC
WT
VIsolation
Junction to Case Thermal Resistance (IGBT)
Junction to Case Thermal Resistance (Diode)
Package Weight
RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
--
-
2500
29.2
.35
°C/W
.60
-g
Volts
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
www.DataS3heSeeet4MUil.-cSotdm-750 Method 3471.
4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the
clamping diode.
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specications and information contained herein.


Part Number APT60GA60JD60
Description High Speed PT IGBT
Maker Microsemi Corporation
Total Page 9 Pages
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