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  Microsemi Electronic Components Datasheet  

SD1224 Datasheet

RF & MICROWAVE TRANSISTORS

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SD1224 pdf
RF PRODUCTS DIVISION
SD1224
RF & MICROWAVE TRANSISTORS
PRODUCT PREVIEW
DESCRIPTION
The SD1224 is an epitaxial silicon NPN planar transistor designed
primarily for 28 V FM Class C RF amplifiers utilized in ground station
transmitters. This device utilizes ballasted emitter resistors and
improved metallization systems to achieve optimum load mismatch
capability.
www.DataSIhMePetO4RUT.cAoNmT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
! 175 MHz
! 28 Volts
! Class C
! Common Emitter
! Efficiency 60% Min.
! POUT = 40 W Min.
! GP = 7.6 dB Gain
APPLICATIONS/BENEFITS
! VHF FM Applications
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C)
Symbol
Parameter
Value
VCBO
VCEO
VEBO
IC
PDISS
TJ
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
65
35
4.0
5.0
60
+200
TSTG Storage Temperature
-65 to +150
Unit
V
V
V
A
W
°C
°C
.380 4LSTUD (M135)
epoxy sealed
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance
2.9
°C/W
PIN CONNECTION
1
42
3
1. Collector
2. Emitter
3. Base
4. Emitter
Copyright 2000
MSC1643.PDF 2000-12-20
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
Page 1


  Microsemi Electronic Components Datasheet  

SD1224 Datasheet

RF & MICROWAVE TRANSISTORS

No Preview Available !

SD1224 pdf
RF PRODUCTS DIVISION
SD1224
RF & MICROWAVE TRANSISTORS
PRODUCT PREVIEW
Symbol
BVCBO
BVCES
BVCEO
www.DataSheet4UB.cVomEBO
ICES
ICBO
hFE
STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25°C)
Test Conditions
SD1224
Min. Typ.
IC = 10 mA
IC = 200 mA
IC = 200 mA
IB = 0 mA
VBE = 0 V
IB = 0 mA
65
65
35
IE = 10 mA
VCE = 30 V
VCB = 30 V
VCE = 5 V
IC = 0 mA
IE = 0 mA
IE = 0 mA
IC = 500 mA
4.0
5
Max.
10
1
200
Units
V
V
V
V
mA
mA
Symbol
POUT
GP
ηC
COB
DYMANIC ELECTRICAL SPECIFICATIONS (TCASE = 25°C)
Test Conditions
SD1224
Min. Typ.
f = 175 MHz
f = 175 MHz
f = 175 MHz
f = 1 MHz
PIN = 7.0 W
PIN = 7.0 W
PIN = 7.0 W
VCB = 30 V
VCE = 28 V
VCE = 28 V
VCE = 28 V
40
7.6
60
Max.
65
Units
W
dB
%
pF
PIN (W)
2.0
4.0
6.0
8.0
Test Conditions: VCE = 28 V
f = 175 MHz
IMPEDANCE DATA
POUT (w)
ZIN ()
28.5 0.85 + j 1.20
43.0 1.05 + j 1.32
53.0 1.01 + j 1.42
60.5 1.05 + j 1.35
ZCL ()
3.25 + j 7.05
4.45 + j 5.40
5.25 + 4.42
5.45 + j 4.12
Copyright 2000
MSC1643.PDF 2000-12-20
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
Page 2


Part Number SD1224
Description RF & MICROWAVE TRANSISTORS
Maker Microsemi Corporation
Total Page 4 Pages
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