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Mitsubishi
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M5M27C128K Datasheet Preview

M5M27C128K Datasheet

128K-Bit CMOS Erasable and Electrically Reprogrammable ROM

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M5M27C128K pdf
MITSUBISHI LSI.
'iF~;0,';;' ('1'"
MSM27C128K, -2, -3
,\.;;~.'/;'
131 072-BIT( 16384-WORD BY 8-BIT)
'ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
DESCRIPTION
The Mits.ubishi M5M27C12BK is a high-speed 131072-bit
ultraviolet erasable and electrically reprogram mabie read
only memory_ It is suitable for microprocessor program-
ming applications where rapid turn-around is required_
The M5M27C12BK is fabricated by N-channel double
polysilicon Memory gate and CMOS technology for periph-
eral circuits, and available in a 2B pin D I L package with a
transparent lid_
FEATURES
• 163B4 word x B bit organization
• Access time M5M27C12BK-2 .. _ .. ___ 200ns (max.)
M5M27C12BK ______ . __ 250ns (max.)
M5M27C12BK-3 ........ 300ns (max.)
• Two line control OE, CE
• Low power current (Icc): Active ..... 30mA (max.)
Standby .... 1mA (max.)
• Single 5V power supply
• 3-State output buffer
• Input and output TTL-compatible in read and program
mode
• Standard 2B-pin D I L package
• Fast programming algorithm
• Interchangeable with M5L2712BK
PIN CONFIGURATION (TOP VIEW)
(5V.21V)Vpp
A7
A6
As
ADDRESS
INPUTS
A4
A3
A2
AI
Ao
Do
DATA INPUTS/ { D I
OUTPUTS
D2
(OV) GND
Outline 2BK4
VCC(5V)
APPLICATION
• Microcomputer systems and peripheral equipment
BLOCK DIAGRAM
r-'
ADDRESS INPUTS
~
~
~
3
4
As ~5
6
>8b
~
1
X-DECODER
Y-DECODER
I
I
131072-BITS
CELL MATRIX
i
!
Y GATE CIRCUITS
CHIP ENABLE INPUT CE
OUTPUT ENABLE INPUT OE
PROGRAM INPUT PGM ~
VCc(5V)
Vpp(5V.21V) 1
GND(OV) 14
CHIP ENABLE
OUTPUT ENABLE
AND
PROG. LOGIC
'"
OUTPUT SENSE
AND
OUTPUT BUFFERS
j
- - - - 1 1 W3l1 5X100 W~9
pOD 1D2D3~4DsD6D71
DATA INPUTS/OUTPUTS
• MITSUBISHI
"'ELECTRIC
6-19



Mitsubishi
Mitsubishi

M5M27C128K Datasheet Preview

M5M27C128K Datasheet

128K-Bit CMOS Erasable and Electrically Reprogrammable ROM

No Preview Available !

M5M27C128K pdf
MITSUBISHI LSI.
MSM27C128K, -2, -3
131 072-BIT(16384-WORD BY 8-BIT)
CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
FUNCTION
Read
Set the CE and OE terminals to the read mode (low level).
Low level input to CE and OE and address signals to the ad-
dress inputs (Ao - A ,3) make the data contents of the
designated address location available at the data input/output
(Do - 0 7), When the CE or OE signal is high, data input/ output
are in a floating state.
, When the CE signal is high, the device is in the standby
mode or power-down mode.
Programming
(Fast programming algorithm)
First set Vcc= 6V, Vpp=21V and then set an address to first
address to be programmed. After applying 1 ms program
pulse (PGM) to the address, verify is performed. If the output
data of that address is not verified correctly, apply one more 1
ms program pulse. The programmer continues 1 ms pulse-
then-verify routines until the device verify correctly or fifteen
of these pulse-then-verify routines have been completed. The
programmer also maintains its total number of 1 ms pulses ap-
plied to that address in register X. And then applied a program
pulse 4 times of register X value long as an overprogram pulse.
When the programming procedure above is finished, step to
the next address and repeat this procedure till last address to
be programmed. (See P.6-24)
(Conventional programming algorithm)
The device enters the programming mode when21V is sup-
plied to the Vpp power supply input and ~is at low level. A
location is designated by address signals (Ao-A,3), and the
data to be programmed must be applied at 8-bits in parallel to
the data inputs (Do - 0 7), A program pulse to the PGM at this
state will effect programming. Only one programming pulse is
required, but its width must satisfy the condition 45
ms~tpw~55 ms.
Erase
Erase is effected by exposure to ultraviolet light with a
wavelength of 2537A at an intensity of appoximately
15WS/cm2. Sunlight and fluorescent light may contain
ultraviolet light sufficient to erase the programmed informa-
tion.. For any operation in the read mode, the transparent lid
should be covered with opaque tape.
MODE SELECTION
~~Mode
Read
Standby
Program
Program verify
Program inhibit
, *: X can be either VIL or VIH ,
CE(20)
VIL
VIH
VIL
VIL
VIH
-
OE(22)
VIL
X*
VIH
VIL
X*
PGM (27)
VIH
X*
VIL
VIH
X*
Vpp( 1)
Vcc
Vcc
Vpp
Vpp
Vpp
ABSOLUTE MAXIMUM RATINGS (Note 1)
Symbol
Parameter
Limits
Unit
Topr
,Temperature under bias
- 10-80
'C
Tstg
VII
VI2
Storage temperature
All input or output voltage (Note 2)
Vpp supply voltage during programming (Note 21
- 65-- 125
-0.6-7
-0.6-22.0
'C
V
V
Note 1: Stresses above those listed may cause permanent damage to the devics. This is a stress rating only and
functional operation of the device at these or at any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods affects device reliability.
2: With respect to Ground.
Vc0(28)
Vcc
Vcc
Vcc
Vcc
Vcc
Outputs
(11- 13, 15- 19)
Data out
Floating
Data in
Data out
--
Floating
6-20
.•. MITSUBISHI
~ELECTRIC


Part Number M5M27C128K
Description 128K-Bit CMOS Erasable and Electrically Reprogrammable ROM
Maker Mitsubishi
Total Page 8 Pages
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