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Mitsubishi Electric
Mitsubishi Electric

MGF4953A Datasheet Preview

MGF4953A Datasheet

(MGF4953A / MGF4954A) SUPER LOW NOISE InGaAs HEMT

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MGF4953A pdf
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June/2004
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF4953A/MGF4954A
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
DESCRIPTION
The MGF4953A/MGF4954A super-low noise HEMT (High
Electron Mobility Transistor) is designed for use in C to K band
amplifiers.
The lead-less ceramic package assures minimum parasitic losses.
Outline Drawing
FEATURES
Low noise figure
@ f=12GHz
MGF4953A : NFmin. = 0.40dB (Typ.)
MGF4954A : NFmin. = 0.60dB (Typ.)
Fig.1
High associated gain
@ f=12GHz
Gs = 13.5dB (Typ.)
APPLICATION
C to K band low noise amplifiers
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
MITSUBISHI Proprietary
Not to be reproduced or disclosed
without permission by Mitsubishi Electric
ORDERING INFORMATION
Tape & reel 3000pcs./reel
ABSOLUTE MAXIMUM RATINGS
Symbol
VGDO
VGSO
ID
Parameter
Gate to drain voltage
Gate to source voltage
Drain current
PT Total power dissipation
Tch Channel temperature
Tstg Storage temperature
ELECTRICAL CHARACTERISTICS
Synbol
Parameter
V(BR)GDO
IGSS
IDSS
VGS(off)
gm
Gs
NFmin.
Gate to drain breakdown voltage
Gate to source leakage current
Saturated drain current
Gate to source cut-off voltage
Transconductance
Associated gain
Minimum noise figure
(Ta=25°C )
Ratings
-4
-4
60
50
125
-65 to +125
Unit
V
V
mA
mW
°C
°C
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
(Ta=25°C )
Test conditions
IG=-10µA
VGS=-2V,VDS=0V
VGS=0V,VDS=2V
VDS=2V,ID=500µA
VDS=2V,ID=10mA
VDS=2V,
ID=10mA
MGF4953A
f=12GHz
MGF4954A
MIN.
-3
--
15
-0.1
--
12.0
--
--
Limits
TYP.
--
--
--
--
70
13.5
0.40
0.60
MAX
--
50
60
-1.5
--
--
0.50
0.80
Unit
V
µA
mA
V
mS
dB
dB
dB
MITSUBISHI
(1/5)
June/2004



Mitsubishi Electric
Mitsubishi Electric

MGF4953A Datasheet Preview

MGF4953A Datasheet

(MGF4953A / MGF4954A) SUPER LOW NOISE InGaAs HEMT

No Preview Available !

MGF4953A pdf
June/2004
Fig.1
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Top
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B0
2EG
JŽ
b
ŒH
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MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF4953A/MGF4954A
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
Side
‡…‰‡ç‡…ˆ
‡…‡ç‡…ˆ
Unit : mm
Bottom
H
Œ
‰„©‡…‰ŽŒ
‰„ˆ…‡‰€

I
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ŽJ
‡…‡Œ
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from "A" side view
Square shape electrode is Drain
HM Gate
IM Source
JM Drain
MITSUBISHI
(2/5)
June/2004


Part Number MGF4953A
Description (MGF4953A / MGF4954A) SUPER LOW NOISE InGaAs HEMT
Maker Mitsubishi Electric
Total Page 5 Pages
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