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Mitsubishi Electric
Mitsubishi Electric

RA13H3340M Datasheet Preview

RA13H3340M Datasheet

MOBILE RADIO

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RA13H3340M pdf
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF MOSFET MODULE
RA13H3340M
330-400MHz 13W 12.5V MOBILE RADIO
DESCRIPTION
The RA13H3340M is a 13-watt RF MOSFET Amplifier Module
for 12.5-volt mobile radios that operate in the 330- to 400-MHz
range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the drain
and the RF input signal attenuates up to 60 dB. The output power
and drain current increase as the gate voltage increases. With a
gate voltage around 4V (minimum), output power and drain current
increases substantially. The nominal output power becomes
available at 4.5V (typical) and 5V (maximum). At VGG=5V, the
typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
• Pout>13W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 330-400MHz
• Low-Power
www.DataSheet4U.com
Control
Current
IGG=1mA
(typ)
at
VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current
with the gate voltage and controlling the output power with the
input power
BLOCK DIAGRAM
2
3
14
5
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (Pout)
5 RF Ground (Case)
ORDERING INFORMATION:
ORDER NUMBER
RA13H3340M-E01
RA13H3340M-01
(Japan - packed without desiccator)
SUPPLY FORM
Antistatic tray,
10 modules/tray
RA 13H3340M
MITSUBISHI ELECTRIC
1/9
23 Dec 2002



Mitsubishi Electric
Mitsubishi Electric

RA13H3340M Datasheet Preview

RA13H3340M Datasheet

MOBILE RADIO

No Preview Available !

RA13H3340M pdf
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
VDD Drain Voltage
VGG<5V
VGG Gate Voltage
VDD<12.5V, Pin=0mW
Pin Input Power
Pout Output Power
f=330-400MHz,
ZG=ZL=50
Tcase(OP) Operation Case Temperature Range
Tstg Storage Temperature Range
The above parameters are independently guaranteed.
MITSUBISHI RF POWER MODULE
RA13H3340M
RATING
17
6
100
20
-30 to +110
-40 to +110
UNIT
V
V
mW
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN TYP MAX
f Frequency Range
330 400
Pout Output Power
ηT Total Efficiency
2fo 2nd Harmonic
ρin Input VSWR
VDD=12.5 V
VGG=5V
Pin=50mW
IGG Gate Current
— Stability
VDD=10.0-15.2V, Pin=25-70mW,
Pout<20W (VGG control), Load VSWR=3:1
— Load VSWR Tolerance VDD=15.2V, Pin=50mW, Pout=13W (VGG control),
Load VSWR=20:1
13
40
-30
3:1
1
No parasitic oscillation
No degradation or
destroy
UNIT
MHz
W
%
dBc
mA
All parameters, conditions, ratings, and limits are subject to change without notice.
RA 13H3340M
MITSUBISHI ELECTRIC
2/9
23 Dec 2002


Part Number RA13H3340M
Description MOBILE RADIO
Maker Mitsubishi Electric
Total Page 9 Pages
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