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Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor

MGFS36E2325 Datasheet Preview

MGFS36E2325 Datasheet

2.3-2.5GHz HBT HYBRID IC

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MGFS36E2325 pdf
Specifications are subject to change without notice.
DESCRIPTION
MGFS36E2325 is a GaAs RF amplifier designed
for WiMAX CPE.
FEATURES
InGaP HBT Device
6V Operation
27dBm Linear Output Power
33dB Linear Gain
Integrated Output Power Detector
Integrated 1-bit 16dB Step Attenuator
50ohms Matched
Surface Mount Package
RoHS Compliant Package
APPLICATIONS
IEEE802.16-2004, IEEE802.16e-2005
FUNCTIONAL BLOCK DIAGRAM
MITSUBISHI SEMICONDUCTOR
MGFS36E2325
2.3-2.5GHz HBT HYBRID IC
Outline Drawing
4.5
1.0
36E
4.5 2325
(Lot No.)
10 9 8 7 6
12345
(X-ray Top View)
1 Pin
2 Vc (Vcb)
3 Vc (Vc1)
4 Vc (Vc2)
5 Vc (Vc3)
6 Pout
7 Po_det
8 GND
9 Vref
10 Vcont
DIM IN mm
Pin
Vcont
(0/3V)
Vcb
Vc1
1000pF
Vc2
www.DataSheet.net/
Vc3
1000pF
1000pF
Pout
1000pF
Bias Circuit
Po_det
33kohms
Vref
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the
possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give
due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary, circuits,
(ii)use of non-flammable material or (iii)prevention against any malfunction or mishap.
MITSUBISHI ELECTRIC CORP.
(1/6)
January-2008
Datasheet pdf - http://www.DataSheet4U.c



Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor

MGFS36E2325 Datasheet Preview

MGFS36E2325 Datasheet

2.3-2.5GHz HBT HYBRID IC

No Preview Available !

MGFS36E2325 pdf
Specifications are subject to change without notice.
MITSUBISHI SEMICONDUCTOR
MGFS36E2325
2.3-2.5GHz HBT HYBRID IC
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Symbol Parameter
Conditions*
Vc1, Vc2
Vc3, Vcb
Collector Supply Voltage
Pout27.0dBm
Vref Reference Voltage
Pout27.0dBm
Value
8
3
Unit
V
V
Vcont ATT Control Voltage
Pout27.0dBm
3.3
V
Ic1 80 mA
Ic2 Operation Current
Pout27.0dBm
250
mA
Ic3 900 mA
Pin Input Power
Pout27.0dBm
5
dBm
- Duty Cycle
Pout27.0dBm
50
%
Tc(op) Operation Temperature
Pout27.0dBm
-30~+85
°C
Tstg Storage Temperature
-
-40~+125
°C
*NOTE : Zin=Zout=50
Each maximum rating is guaranteed independently.
Please take care that MGFS36E2325 is operated under these conditions at the worst
case on your terminal.
ELECTRICAL CHARACTERISTICS (Ta=25°C)
Symbol Parameter
Test Conditions*
f Frequency
Gp Gain
ηt Efficiency
EVM EVM
Vdet Power Detector Voltage
ATT Control Gain Step
Ileak Leakage Current
*NOTE : Zin=Zout=50
-
www.DataSheet.net/
Vc=6V, Vref=2.85V
Pout=27dBm
64QAM OFDM Modulation
Duty Cycle < 50%
Vcont=3V
Vc=6V, Vref=0V
Limits
Min Typ Max
2.3 2.5
33
11
2.5
2.0
17
10
Unit
GHz
dB
%
%
V
dB
µA
ESD RATING - Class 1A (HBM)
MOISTURE SENSITIVITY LEVEL - Level 3
THERMAL RESISTANCE : 30°C/W
MITSUBISHI ELECTRIC CORP.
(2/6)
January-2008
Datasheet pdf - http://www.DataSheet4U.co.kr/


Part Number MGFS36E2325
Description 2.3-2.5GHz HBT HYBRID IC
Maker Mitsubishi Electric Semiconductor
Total Page 6 Pages
PDF Download
MGFS36E2325 pdf
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