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Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor

RA08H1317M Datasheet Preview

RA08H1317M Datasheet

135-175MHz 8W 12.5V PORTABLE/MOBILE RADIO

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RA08H1317M pdf
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF MOSFET MODULE
RA08H1317M
135-175MHz 8W 12.5V PORTABLE/MOBILE RADIO
DESCRIPTION
The RA08H1317M is a 8-watt RF MOSFET Amplifier Module
for 12.5-volt portable/ mobile radios that operate in the 135- to
175-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the drain
and the RF input signal attenuates up to 60 dB. The output power
and drain current increase as the gate voltage increases. With a
gate voltage around 2.5V (minimum), output power and drain
current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
VGG=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
• Pout>8W @ VDD=12.5V, VGG=3.5V, Pin=20mW
ηT>40% @ Pout=8W (VGG control), VDD=12.5V, Pin=20mW
• Broadband Frequency Range: 135-175MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain current
with the gate voltage and controlling the output power with the
input power
BLOCK DIAGRAM
2
3
14
5
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (Pout)
5 RF Ground (Case)
ORDERING INFORMATION:
ORDER NUMBER
RA08H1317M-E01
RA08H1317M-01
(Japan - packed without desiccator)
SUPPLY FORM
Antistatic tray,
25 modules/tray
RA 08H1317M
MITSUBISHI ELECTRIC
1/9
23 Dec 2002



Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor

RA08H1317M Datasheet Preview

RA08H1317M Datasheet

135-175MHz 8W 12.5V PORTABLE/MOBILE RADIO

No Preview Available !

RA08H1317M pdf
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MAXIMUM RATINGS (Tcase=+25°C, unless oth erwise specified)
SYMBOL PARAMETER
CONDITIONS
VDD Drain Voltage
VGG<3.5 V
VGG Gate Voltage
VDD<12.5V, Pin=0mW
Pin Input Power
Pout Output Power
f=135-175MHz,
ZG=ZL=50
Tcase(OP) Operation Case Temperature Range
Tstg Storage Temperature Range
The above parameters are independently guaranteed.
MITSUBISHI RF POWER MODULE
RA08H1317M
RATING
16
4
40
10
-30 to +90
-40 to +110
UNIT
V
V
mW
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN TYP MAX
f Frequency Range
135 175
Pout Output Power
ηT Total Efficiency
2fo 2nd Harmonic
ρin Input VSWR
IGG Gate Current
— Stability
VDD=12.5V,VGG=3.5V, Pin=20mW
Pout=8W (VGG control),
VDD=12.5V,
Pin=20mW
VDD=5-13.2V, Pin=10-30mW, Pout<9W (VGG control),
Load VSWR=4:1
8
40
-25
4.4:1
1
No parasitic oscillation
— Load VSWR Tolerance VDD=13.2V, Pin=20mW, Pout=8W (VGG control),
Load VSWR=20:1
No degradation or
destroy
UNIT
MHz
W
%
dBc
mA
All parameters, conditions, ratings, and limits are subject to change without notice.
RA 08H1317M
MITSUBISHI ELECTRIC
2/9
23 Dec 2002


Part Number RA08H1317M
Description 135-175MHz 8W 12.5V PORTABLE/MOBILE RADIO
Maker Mitsubishi Electric Semiconductor
Total Page 9 Pages
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