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Motorola Electronic Components Datasheet

MGS13002D Datasheet

Insulated Gate Bipolar Transistor

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MGS13002D pdf
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Designer's Data Sheet
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This IGBT contains a built–in free wheeling diode and a gate
protection zener. Fast switching characteristics result in efficient
operation at higher frequencies.
Built–In Free Wheeling Diode
Built–In Gate Protection Zener Diode
Industry Standard Package (TO92 — 1.0 Watt)
mHigh Speed Eoff: Typical 6.5 J @ IC = 0.3 A; TC = 125°C and
mdV/dt = 1000 V/ s
Robust High Voltage Termination
Robust Turn–Off SOA
C
G
Order this document
by MGS13002D/D
MGS13002D
POWERLUX
IGBT
0.5 A @ 25°C
600 V
E
C
G
E CASE 029–05
TO–226AE
TO92 (1.0 WATT)
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameters
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Gate Voltage (RGE = 1.0 M)
Gate–Emitter Voltage — Continuous
Collector Current — Continuous @ TC = 25°C
— Continuous @ TC = 90°C
— Repetitive Pulsed Current (1)
Total Power Dissipation @ TC = 25°C
Operating and Storage Junction Temperature Range
VCES
VCGR
VGES
IC25
IC90
ICM
PD
TJ, Tstg
600
600
± 15
0.5
0.3
2.0
1.0
– 55 to 150
Vdc
Vdc
Vdc
Adc
Watt
°C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case – IGBT
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 5 seconds
RθJC
RθJA
TL
25 °C/W
125
260 °C
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (TC 150°C)
Single Pulse Drain–to–Source Avalanche
Energy – Starting @ TC = 25°C
Energy – Starting @ TC = 125°C
WVCE = 100 V, VGE = 15 V, Peak IL = 2.0 A, L = 3.0 mH, RG = 25
EAS
mJ
125
40
(1) Pulse width is limited by maximum junction temperature repetitive rating.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc.
© MMoototororloa,laIncP.o19w9e7r Products Division Technical Data
1


Motorola Electronic Components Datasheet

MGS13002D Datasheet

Insulated Gate Bipolar Transistor

No Preview Available !

MGS13002D pdf
MGS13002D
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(VGE = 0 Vdc, IC = 250 µAdc)
Temperature Coefficient (Positive)
BVCES
600 680
— 0.7
Vdc
— V/°C
Zero Gate Voltage Collector Current
(VCE = 600 Vdc, VGE = 0 Vdc, TC = 25°C)
(VCE = 600 Vdc, VGE = 0 Vdc, TC = 125°C)
Gate–Body Leakage Current (VGE = ± 15 Vdc, VCE = 0 Vdc)
ICES
ICES
IGES
µAdc
— 0.1 5.0
— 5.0 50
— 10 100 mAdc
ON CHARACTERISTICS
Collector–to–Emitter On–State Voltage
(VGE = 15 Vdc, IC = 0.3 Adc, TC = 25°C)
(VGE = 15 Vdc, IC = 0.3 Adc, TC = 125°C)
VCE(on)
Vdc
— 1.6 2.0
— 1.5 —
Gate Threshold Voltage
(VCE = VGE, IC = 250 mAdc)
Threshold Temperature Coefficient (Negative)
VGE(th)
Vdc
3.5 — 6.0
— 6.0 — mV/°C
Forward Transconductance (VCE = 10 Vdc, IC = 0.5 Adc)
gfe
0.3 0.42
— Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VCE = 20 Vdc, VGE = 0 Vdc,
f = 1.0 MHz)
Cies
Coes
Cres
— 75 100 pF
— 11 20
— 1.6 5.0
DIODE CHARACTERISTICS
Diode Forward Voltage Drop
(IEC = 0.3 Adc, TC = 25°C)
(IEC = 0.3 Adc, TC = 125°C)
(IEC = 0.1 Adc, TC = 25°C)
(IEC = 0.1 Adc, TC = 125°C)
Reverse Recovery Time @ TC = 25°C
IF = 0.4 Adc, VR = 300 Vdc, dIF/dt = 10 A/ms
Reverse Recovery Stored Charge
IF = 0.4 Adc, VR = 300 Vdc, dIF/dt = 10 A/ms
VFEC
trr
QRR
Vdc
— 5.0 6.0
— 5.2 —
— 2.3 3.0
— 2.3 —
— 150 —
ns
mC
— 35 —
SWITCHING CHARACTERISTICS (1)
Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss
(VCC = 300 Vdc, IC = 0.4 Adc,
VGE = 15 Vdc, L = 3.0 mH, RG = 25 Ω,
TC = 25°C, dV/dt = 1000 V/ms)
Energy losses include “tail”
Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss
(VCC = 300 Vdc, IC = 0.4 Adc,
VGE = 15 Vdc, L = 3.0 mH, RG = 25 Ω,
TC = 125°C, dV/dt = 1000 V/ms)
Energy losses include “tail”
Gate Charge
(VCC = 300 Vdc, IC = 0.3 Adc,
VGE = 15 Vdc)
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
td(off)
tf
Eoff
td(off)
tf
Eoff
QT
— 28 —
— 150 —
— 3.25 —
— 21 —
— 280 —
— 8.0 —
— 6.4 —
ns
mJ
ns
mJ
nC
2 Motorola Power Products Division Technical Data


Part Number MGS13002D
Description Insulated Gate Bipolar Transistor
Maker Motorola
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