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Motorola Electronic Components Datasheet

MGSF1P02ELT1 Datasheet

TMOS Single P-Channel FET

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MGSF1P02ELT1 pdf
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Preliminary Information
Low rDS(on) Small-Signal MOSFETs
TMOS Single P-Channel
Field Effect Transistors
Part of the GreenLinePortfolio of devices with energy–
conserving traits.
These miniature surface mount MOSFETs utilize Motorola’s
High Cell Density, HDTMOS process. Low rDS(on) assures
minimal power loss and conserves energy, making this device
ideal for use in space sensitive power management circuitry.
Typical applications are dc–dc converters and power manage-
ment in portable and battery–powered products such as
computers, printers, PCMCIA cards, cellular and cordless
telephones.
Low rDS(on) Provides Higher Efficiency and Extends Battery
Life
1
GATE
Miniature SOT–23 Surface Mount Package Saves Board Space
3 DRAIN
2 SOURCE
MGSF1P02ELT1
Motorola Preferred Device
P–CHANNEL
ENHANCEMENT–MODE
TMOS MOSFET
3
1
2
CASE 318–08, Style 21
SOT–23 (TO–236AB)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25°C
Drain Current — Pulsed Drain Current (tp 10 µs)
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature Range
Thermal Resistance — Junction–to–Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 10 seconds
Device Marking: PC
Device
MGSF1P02ELT1
MGSF1P02ELT3
ORDERING INFORMATION
Reel Size
Tape Width
78mm embossed tape
138mm embossed tape
Quantity
3000
10,000
Preferred devices are Motorola recommended choices for future use and best overall value.
Symbol
VDSS
VGS
ID
IDM
PD
TJ, Tstg
RθJA
TL
Value
20
± 8.0
750
2000
400
– 55 to 150
300
260
Unit
Vdc
Vdc
mA
mW
°C
°C/W
°C
4–28
Motorola Small–Signal Transistors, FETs and Diodes Device Data


Motorola Electronic Components Datasheet

MGSF1P02ELT1 Datasheet

TMOS Single P-Channel FET

No Preview Available !

MGSF1P02ELT1 pdf
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Static Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 0.75 Adc)
(VGS = 2.5 Vdc, ID = 0.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(VDS = 5.0 Vdc)
(VDS = 5.0 Vdc)
(VDG = 5.0 Vdc)
Rise Time
Turn–Off Delay Time
(VDD = 15 Vdc, ID = 1.0 Adc,
RL = 50 )
Fall Time
Gate Charge (See Figure 6)
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current
Pulsed Current
Forward Voltage(2)
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
rDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
IS
ISM
VSD
Min
20
0.7
MGSF1P02ELT1
Typ Max Unit
— — Vdc
µAdc
— 1.0
— 10
±100
nAdc
0.85 1.2 Vdc
Ohms
0.20 0.26
0.32 0.50
130 —
120 —
60 —
pF
2.5
1.0
16
8.0
6000
ns
pC
— 0.6
— 0.75
1.5 —
A
V
Motorola Small–Signal Transistors, FETs and Diodes Device Data
4–29


Part Number MGSF1P02ELT1
Description TMOS Single P-Channel FET
Maker Motorola
Total Page 2 Pages
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