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Motorola Electronic Components Datasheet

MGW21N60ED Datasheet

Insulated Gate Bipolar Transistor

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MGW21N60ED pdf
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Preliminary Data Sheet
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged
with a soft recovery ultra–fast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Its new 600V IGBT technology is
specifically suited for applications requiring both a high tempera-
ture short circuit capability and a low VCE(on). It also provides fast
switching characteristics and results in efficient operation at high
frequencies. Co–packaged IGBTs save space, reduce assembly
time and cost. This new E–series introduces an energy efficient,
ESD protected, and rugged short circuit device.
Industry Standard TO–247 Package
High Speed: Eoff = 65 mJ/A typical at 125°C
High Voltage Short Circuit Capability – 10 ms minimum at
125°C, 400 V
Low On–Voltage — 2.1 V typical at 20 A, 125°C
Soft Recovery Free Wheeling Diode is included in the Package
Robust High Voltage Termination
ESD Protection Gate–Emitter Zener Diodes
G
C
E
Order this document
by MGW21N60ED/D
MGW21N60ED
IGBT IN TO–247
21 A @ 90°C
31 A @ 25°C
600 VOLTS
SHORT CIRCUIT RATED
ON–VOLTAGE
G
C
E
CASE 340K–01,
TO–247 AE
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Collector–Emitter Voltage
Collector–Gate Voltage (RGE = 1.0 M)
Gate–Emitter Voltage — Continuous
Collector Current — Continuous @ TC = 25°C
Collector Current — Continuous @ TC = 90°C
Collector Current — Repetitive Pulsed Current (1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
VCES
VCGR
VGE
IC25
IC90
ICM
PD
600
600
± 20
31
21
42
142
1.14
Operating and Storage Junction Temperature Range
TJ, Tstg
– 55 to 150
Short Circuit Withstand Time
(VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 )
tsc 10
Thermal Resistance — Junction to Case – IGBT
Thermal Resistance — Junction to Diode
Thermal Resistance — Junction to Ambient
RθJC
RθJC
RθJA
0.88
1.4
45
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 5 seconds
TL 260
Mounting Torque, 6–32 or M3 screw
10 lbfSin (1.13 NSm)
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
W/°C
°C
ms
°C/W
°C
© MMoototororloa,laIncIG. 1B99T7 Device Data
1


Motorola Electronic Components Datasheet

MGW21N60ED Datasheet

Insulated Gate Bipolar Transistor

No Preview Available !

MGW21N60ED pdf
MGW21N60ED
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(VGE = 0 Vdc, IC = 25 µAdc)
Temperature Coefficient (Positive)
V(BR)CES
600
870
Vdc
— mV/°C
Emitter–to–Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc)
Zero Gate Voltage Collector Current
(VCE = 600 Vdc, VGE = 0 Vdc)
(VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc)
BVECS 15 — — Vdc
ICES
µAdc
— — 10
— — 200
IGES
— — 50 µAdc
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage
(VGE = 15 Vdc, IC = 10 Adc)
(VGE = 15 Vdc, IC = 10 Adc, TJ = 125°C)
(VGE = 15 Vdc, IC = 20 Adc)
Gate Threshold Voltage
(VCE = VGE, IC = 1.0 mAdc)
Threshold Temperature Coefficient (Negative)
VCE(on)
Vdc
— 1.7 2.1
— 1.5 —
— 2.2 2.5
VGE(th)
Vdc
4.0 6.0 8.0
— 10 — mV/°C
Forward Transconductance (VCE = 10 Vdc, IC = 20 Adc)
gfe — 8.6 — Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VCE = 25 Vdc, VGE = 0 Vdc,
f = 1.0 MHz)
Cies
Coes
Cres
— 1605 —
— 146 —
— 23 —
pF
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss
Turn–On Switching Loss
Total Switching Loss
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss
Turn–On Switching Loss
Total Switching Loss
Gate Charge
(VCC = 360 Vdc, IC = 20 Adc,
VGE = 15 Vdc, L = 300 mH,
RG = 20 Ω, TJ = 25°C)
Energy losses include “tail”
(VCC = 360 Vdc, IC = 20 Adc,
VGE = 15 Vdc, L = 300 mH,
RG = 20 Ω, TJ = 125°C)
Energy losses include “tail”
(VCC = 360 Vdc, IC = 20 Adc,
VGE = 15 Vdc)
td(on)
tr
td(off)
tf
Eoff
Eon
Ets
td(on)
tr
td(off)
tf
Eoff
Eon
Ets
QT
Q1
Q2
— 29 — ns
— 60 —
— 238 —
— 140 —
— 0.8 1.15 mJ
— 0.6 —
— 1.4 —
— 28 — ns
— 62 —
— 338 —
— 220 —
— 1.3 — mJ
— 0.8 —
— 2.1 —
— 86 — nC
— 18 —
— 39 —
DIODE CHARACTERISTICS
Diode Forward Voltage Drop
(IEC = 10 Adc)
(IEC = 10 Adc, TJ = 125°C)
(IEC = 17 Adc)
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
VFEC
Vdc
— 1.6 1.9
— 1.3 —
1.7 2.0 2.3
(continued)
2 Motorola IGBT Device Data


Part Number MGW21N60ED
Description Insulated Gate Bipolar Transistor
Maker Motorola
Total Page 6 Pages
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