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NCE Power Semiconductor
NCE Power Semiconductor

NCE3080I Datasheet Preview

NCE3080I Datasheet

NCE N-Channel Enhancement Mode Power MOSFET

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NCE3080I pdf
http://www.ncepower.com
Pb Free Product
NCE3080I
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE3080I uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =30V,ID =80A
RDS(ON) <6.5m@ VGS=10V
RDS(ON) < 10m@ VGS=5V
Schematic diagram
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
TO-251 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE3080I
NCE3080I
TO-251
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
30
±20
80
50
170
83
0.56
150
-55 To 175
Unit
V
V
A
A
A
W
W/
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.3



NCE Power Semiconductor
NCE Power Semiconductor

NCE3080I Datasheet Preview

NCE3080I Datasheet

NCE N-Channel Enhancement Mode Power MOSFET

No Preview Available !

NCE3080I pdf
http://www.ncepower.com
Pb Free Product
NCE3080I
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
1.8 /W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=30V,VGS=0V
Gate-Body Leakage Current
On Characteristics (Note 3)
IGSS VGS=±20V,VDS=0V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=30A
VGS=5V, ID=24A
Forward Transconductance
Dynamic Characteristics (Note4)
gFS VDS=5V,ID=24A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=15V,VGS=0V,
F=1.0MHz
Turn-on Delay Time
td(on)
Turn-on Rise Time
Turn-Off Delay Time
tr
td(off)
VDD=10V,ID=30A
VGS=10V,RGEN=2.7
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS=10V,ID=30A,
VGS=10V
Qgd
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
VSD VGS=0V,IS=24A
IS
Reverse Recovery Time
Reverse Recovery Charge
trr TJ = 25°C, IF = 80A
Qrr di/dt = 100A/μs(Note3)
Min Typ Max
30 -
-
--
1
- - ±100
1 1.5
- 5.5
- 7.5
20 -
3
6.5
10
-
- 2330
- 460
- 230
-
-
-
- 20
- 15
- 60
- 10
- 51
- 14
- 11
-
-
-
-
-
-
-
- - 1.2
--
80
- 32
50
- 12
20
Unit
V
μA
nA
V
m
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
A
nS
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=15V,VG=10V,L=1mH, Rg=25
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.3


Part Number NCE3080I
Description NCE N-Channel Enhancement Mode Power MOSFET
Maker NCE Power Semiconductor
Total Page 7 Pages
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