MOS FIELD EFFECT TRANSISTOR
N-CHANNEL POWER MOS FET
The 2SK4075 is N-channel MOS FET designed for high current switching applications.
Pure Sn (Tin)
typ. 0.27 g
• Low on-state resistance
RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 30 A)
RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 15 A)
• Low Ciss: Ciss = 2900 pF TYP.
• Logic level drive type
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 40 V
Gate to Source Voltage (VDS = 0 V)
VGSS ±20 V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (TC = 25°C) PT1 52 W
Total Power Dissipation (TA = 25°C) PT2 1.0 W
Tch 150 °C
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg –55 to +150 °C
IAS 28 A
EAS 78 mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
Channel to Case Thermal Resistance
Rth(ch-C) 2.4 °C/W
Channel to Ambient Thermal Resistance
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Document No. D18223EJ2V0DS00 (2nd edition)
Date Published September 2006 NS CP(K)
Printed in Japan
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