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  NEC Electronic Components Datasheet  

K4075 Datasheet

MOS FIELD EFFECT TRANSISTOR

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K4075 pdf
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4075
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4075 is N-channel MOS FET designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
2SK4075-ZK-E1-AY
Pure Sn (Tin)
2SK4075-ZK-E2-AY
PACKING
Tape
2500 p/reel
PACKAGE
TO-252 (MP-3ZK)
typ. 0.27 g
FEATURES
Low on-state resistance
RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 30 A)
RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 15 A)
Low Ciss: Ciss = 2900 pF TYP.
Logic level drive type
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 40 V
Gate to Source Voltage (VDS = 0 V)
VGSS ±20 V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±60
±180
A
A
Total Power Dissipation (TC = 25°C) PT1 52 W
Total Power Dissipation (TA = 25°C) PT2 1.0 W
Channel Temperature
Tch 150 °C
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg –55 to +150 °C
IAS 28 A
EAS 78 mJ
Notes 1. PW 10 μs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 0 V, L = 100 μH
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C) 2.4 °C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
125
°C/W
(TO-252)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18223EJ2V0DS00 (2nd edition)
Date Published September 2006 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2006


  NEC Electronic Components Datasheet  

K4075 Datasheet

MOS FIELD EFFECT TRANSISTOR

No Preview Available !

K4075 pdf
2SK4075
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 40 V, VGS = 0 V
Gate Leakage Current
IGSS VGS = ±20 V, VDS = 0 V
<R>
Gate Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
VGS(off)
| yfs |
RDS(on)1
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 15 A
VGS = 10 V, ID = 30 A
RDS(on)2 VGS = 4.5 V, ID = 15 A
Input Capacitance
Ciss VDS = 10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 20 V
Rise Time
tr ID = 30 A
Turn-off Delay Time
td(off)
VGS = 10 V
Fall Time
tf RG = 0 Ω
Total Gate Charge
QG VDD = 32 V
Gate to Source Charge
QGS
VGS = 10 V
Gate to Drain Charge
Body Diode Forward Voltage Note
QGD
VF(S-D)
ID = 60 A
IF = 60 A, VGS = 0 V
Reverse Recovery Time
trr IF = 60 A, VGS = 0 V
Reverse Recovery Charge
Note Pulsed
Qrr di/dt = 100 A/μs
MIN. TYP. MAX. UNIT
1 μA
±100 nA
1.5 2.0 2.5
V
9.3 S
5.2 6.7 mΩ
7.2 10 mΩ
2900
pF
450 pF
293 pF
18 ns
16 ns
54 ns
9 ns
54 nC
11 nC
15 nC
0.9 1.5
V
33 ns
33 nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
PG.
VGS = 20 0 V
50 Ω
L
VDD
BVDSS
ID
VDD
IAS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off) tf
ton toff
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
2 Data Sheet D18223EJ2V0DS


Part Number K4075
Description MOS FIELD EFFECT TRANSISTOR
Maker NEC
Total Page 8 Pages
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K4075 pdf
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