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NanoAmp Solutions
NanoAmp Solutions

N08L1618C2A Datasheet Preview

N08L1618C2A Datasheet

8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K x 16 bit

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N08L1618C2A pdf
NanoAmp Solutions, Inc.
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
N08L1618C2A
Advance Information
www.DataSheet4U.com
8Mb Ultra-Low Power Asynchronous CMOS SRAM
512K × 16bit
Overview
Features
The N08L1618C2A is an integrated memory
device containing a 8 Mbit Static Random Access
Memory organized as 524,288 words by 16 bits.
The device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with two chip enable
(CE1 and CE2) controls and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently and can also be used to
deselect the device. The N08L1618C2A is optimal
for various applications where low-power is critical
such as battery backup and hand-held devices.
The device can operate over a very wide
temperature range of -40oC to +85oC and is
available in JEDEC standard packages compatible
with other standard 512Kb x 16 SRAMs
Product Family
• Single Wide Power Supply Range
1.65 to 2.2 Volts
• Very low standby current
0.5µA at 1.8V (Typical)
• Very low operating current
1.0mA at 1.8V and 1µs (Typical)
• Very low Page Mode operating current
0.5mA at 1.8V and 1µs (Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.2V
• Very fast output enable access time
25ns OE access time
• Very fast Page Mode access time
tAAP = 25ns
• Automatic power down to standby mode
• TTL compatible three-state output driver
Part Number Package Type
N08L1618C2AB
48 - BGA
N08L1618C2AB2 48 - BGA Green
Operating
Power
Temperature Supply (Vcc)
Speed
Standby
Operating
Current (ISB), Current (Icc),
Typical
Typical
-40oC to +85oC
1.65V - 2.2V
70ns @ 1.8V
85ns @ 1.65V
0.5 µA
1 mA @ 1MHz
Pin Configuration
123456
A LB OE A0 A1 A2 CE2
B I/O8 UB A3 A4 CE1 I/O0
C I/O9 I/O10 A5 A6 I/O1 I/O2
D VSS I/O11 A17 A7 I/O3 VCC
E VCC I/O12 NC A16 I/O4 VSS
F I/O14 I/O13 A14 A15 I/O5 I/O6
G I/O15 NC A12 A13 WE I/O7
H A18 A8
A9 A10 A11 NC
48 Pin BGA (top)
8 x 10 mm
Pin Descriptions
Pin Name
A0-A18
WE
CE1, CE2
OE
LB
UB
I/O0-I/O15
VCC
VSS
NC
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Output Enable Input
Lower Byte Enable Input
Upper Byte Enable Input
Data Inputs/Outputs
Power
Ground
Not Connected
(DOC# 14-02-019 REV F ECN# 01-1280)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.



NanoAmp Solutions
NanoAmp Solutions

N08L1618C2A Datasheet Preview

N08L1618C2A Datasheet

8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K x 16 bit

No Preview Available !

N08L1618C2A pdf
NanoAmp Solutions, Inc.
Functional Block Diagram
Address
Inputs
A0 - A3
Word
Address
Decode
Logic
N08L1618C2A
Advance Information
www.DataSheet4U.com
Address
Inputs
A4 - A18
Page
Address
Decode
Logic
CE1
CE2
WE
OE
UB
LB
Control
Logic
32K Page
x 16 word
x 16 bit
RAM Array
Input/
Output
Mux
and
Buffers
I/O0 - I/O7
I/O8 - I/O15
Functional Description
CE1 CE2 WE OE UB LB
I/O0 - I/O151
MODE
POWER
HXXXXX
XLXXXX
XXXXHH
L H L X3 L1 L1
L H H L L1 L1
L H H H L1 L1
High Z
High Z
High Z
Data In
Data Out
High Z
Standby2
Standby2
Standby2
Write3
Read
Active
Standby
Standby
Standby
Active -> Standby4
Active -> Standby4
Standby4
1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7
are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown.
2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally
isolated from any external influence and disabled from exerting any influence externally.
3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
4. The device will consume active power in this mode whenever addresses are changed. Data inputs are internally isolated from
any expernal influence.
Capacitance1
Item
Symbol
Test Condition
Input Capacitance
I/O Capacitance
CIN VIN = 0V, f = 1 MHz, TA = 25oC
CI/O VIN = 0V, f = 1 MHz, TA = 25oC
1. These parameters are verified in device characterization and are not 100% tested
Min Max Unit
8 pF
8 pF
(DOC#14-02-019 REV F ECN# 01-1280)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
2


Part Number N08L1618C2A
Description 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K x 16 bit
Maker NanoAmp Solutions
Total Page 10 Pages
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N08L1618C2A pdf
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