http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





Nihon Inter Electronics
Nihon Inter Electronics

PRHMB75E6 Datasheet Preview

PRHMB75E6 Datasheet

IGBT MODULE

No Preview Available !

PRHMB75E6 pdf
www.DataSheet.co.kr
IGBT Module-Chopper
75 A,600V
□ 回 路 図 : CIRCUIT
□ 外 形 寸 法 図 : OUTLINE DRAWING
(C2E1)
1
(E2)
2
7(G2)
(C1) 6(E2)
3
94
80 ± 0 .2 5
12 11 12 11 12
12 3
2-Ø 5.5
7
6
3-M5
23 23 17
16 7 16 7 16
4-fasten tab
#110 t= 0.5
LABEL
PRHMB75E6
Dimension:[mm]
□ 最 大 定 格 : MAXIMUM RATINGS (T=25℃)
Item
Symbol
コレクタ・エミッタ間電圧
Collector-Emitter Voltage
CES
ゲ ー ト・エ ミ ッ タ 間 電 圧
Gate-Emitter Voltage
GES
コレク
Collector
コレク
Collector
タ電流
Current
タ損失
Power Dissipation
DC
1ms
CP
接合温度
Junction Temperature Range
保存温度
Storage Temperature Range
stg
絶 縁 耐 圧(Terminal to Base AC,1minute)
Isolation Voltage
ISO
締 め 付 け ト ル ク Module Base to Heatsink
Mounting Torque
Busbar to Main Terminal
tor
Rated Value
600
±20
75
150
320
-40~+150
-40~+125
2,500
2(20.4)
Unit
(RMS)
N・m
(kgf・cm)
□ 電 気 的 特 性 : ELECTRICAL CHARACTERISTICS (T=25℃)
Characteristic
Symbol Test Condition Min. Typ. Max. Unit
コレクタ遮断電流
Collector-Emitter Cut-Off Current
CES
CE= 600V, VGE= 0V
1.0
mA
ゲート漏れ電流
Gate-Emitter Leakage Current
GES
GE= ±20V,VCE= 0V
- - 1.0 μA
コレクタ・エミッタ間飽和電圧
Collector-Emitter Saturation Voltage
CE(sat) = 75A,VGE= 15V
2.1 2.6
ゲ ー ト しきい値電圧
Gate-Emitter Threshold Voltage
GE(th)
CE= 5V,I= 75mA
4.0
8.0
入力容量
Input Capacitance
ies
CE= 10V,VGE= 0V,f= 1MH
- 3,200 - pF
スイッチング時間
Switching Time
上昇時間
ターンオン時間
下降時間
ターンオフ時間
Rise Time
Turn-on Time
Fall Time
Turn-off Time
on
off
CC= 300V
= 4.0Ω
= 12.0Ω
GE= ±15V
- 0.15 0.30
0.25 0.40
0.10 0.35
μs
- 0.35 0.70
□フリーホイーリングダイオードの 特 性: FREE WHEELING DIODE RATINGS & CHARACTERISTICS(T=25℃)
Item
Symbol
Rated Value
Unit
順電流
Forward Current
DC
1ms
FM
75
150
Characteristic
順電圧
Peak Forward Voltage
逆回復時間
Reverse Recovery Time
Symbol Test Condition
rr
= 75A,VGE= 0V
= 75A,VGE= -10V
di/dt= 150A/μs
□ 熱 的 特 性 : THERMAL CHARACTERISTICS
Characteristic
熱抵抗
IGBT
Thermal Impedance
Diode
Symbol Test Condition
Rth(j-c)
Junction to Case
(Tc測定点チップ直下)
日本インター株式会社
Min.
Typ.
1.9
Max. Unit
2.4
- 0.15 0.25 μs
Min.
Typ.
Max.
0.38
0.80
Unit
℃/W
00
Datasheet pdf - http://www.DataSheet4U.net/



Nihon Inter Electronics
Nihon Inter Electronics

PRHMB75E6 Datasheet Preview

PRHMB75E6 Datasheet

IGBT MODULE

No Preview Available !

PRHMB75E6 pdf
www.DataSheet.co.kr
PRHMB75E6
150
125
100
75
50
25
0
0
16
14
12
10
8
6
4
2
0
0
Fig.1- Output Characteristics (Typical)
TC=25°C
VGE=20V
12V
15V
11V
10V
1234
Collector to Emitter Voltage VCE (V)
9V
8V
5
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC=25°C
IC=30A
150A
75A
4 8 12 16
Gate to Emitter Voltage VGE (V)
20
Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical)
400
RL=4.0(
350 TC=25°C
16
14
300 12
250 10
200
VCE=300V
8
150
200V
6
100
100V
4
50 2
00
0 50 100 150 200 250 300
Total Gate Charge Qg (nC)
150
125
100
75
50
25
0
0
16
14
12
10
8
6
4
2
0
0
Fig.2- Output Characteristics (Typical)
TC=125°C
VGE=20V
12V
15V
11V
10V
9V
8V
1234
Collector to Emitter Voltage VCE (V)
5
Fig.4- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC=125°C
IC=30A
75A
150A
4 8 12 16
Gate to Emitter Voltage VGE (V)
20
Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical)
30000
10000
VGE=0V
f=1MHZ
TC=25°C
3000
Cies
1000
300
Coes
Cres
100
0.1 0.2
0.5 1 2
5 10 20
50 100 200
Collector to Emitter Voltage VCE (V)
日本インター株式会社
00
Datasheet pdf - http://www.DataSheet4U.net/


Part Number PRHMB75E6
Description IGBT MODULE
Maker Nihon Inter Electronics
Total Page 4 Pages
PDF Download
PRHMB75E6 pdf
Download PDF File
PRHMB75E6 pdf
View for Mobile






Related Datasheet

1 PRHMB75E6 IGBT MODULE Nihon Inter Electronics
Nihon Inter Electronics
PRHMB75E6 pdf




Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components